Heat flow control and segregation in directional solidification: Development of an experimental and theoretical basis for Bridgman-type growth experiments in a microgravity environment

Within the framework of the proposed research, emphasis was placed on application of magnetic fields to semiconductor growth systems. It was found that magnetic fields up to 3 kGauss do not affect the growth behavior nor the macro-segregation behavior in the system Ge(Ga). Applied fields are found to significantlty alter the radial dopant distribution, which is attributed to alterations in the spatial orientation of convective cells. Increasing the magnetic field to 30 kGauss is found to have a fundamental effect on dopant segregation. Emphasis is also placed on the potential of KC-135 flights for preliminary studies on the effects of reduced gravity environments on the wetting behavior of semiconductor systems in growth configuration. The limited number of experiments conducted does not allow any conclusions on the merits of KC-135 flights for semiconductor processing research

New outlook on control of crystalline and chemical perfection during growth of silicon

Significant progress has been made in our understanding of the Czochralski crystal growth process with the realization that the incorporation of oxygen into silicon is directly related to the internal gettering capability of wafers during device fabrication. It was also recognized that the electronic properties exhibited by silicon during various stages of device fabrication were significantly affected by the thermal history of the silicon during the post-growth cool-down period. Turbulent melt convection, induced by unavoidable destabilizing thermal gradients, was found to interfere with homogeneous dopant (and oxygen) incorporation and to influence markedly the dynamics of nonequilibrium point defects in the solidified silicon matrix during the cool-down period. In view of the unavoidability of destabilizing thermal gradients in conventional crystal growth configurations, melt stabilization through the application of magnetic fields is generally considered a viable approach. Control of heat input to the melt through heat pipe systems, as used during growth of germanium, cannot be applied to industrial growth of silicon. Recent studies have shown that heat exchange systems located coaxially about a growing crystal can be used to stabilize and control not only heat transfer in the grown crystal, but also in the melt adjacent to the solidification interface

Indium antimonide crystal growth experiment M562

It was established that ideal diffusion controlled steady state conditions, never accomplished on earth, were achieved during the growth of Te-doped InSb crystals in Skylab. Surface tension effects led to nonwetting conditions under which free surface solidification took place in confined geometry. It was further found that, under forced contact conditions, surface tension effects led to the formation of surface ridges (not previously observed on earth) which isolated the growth system from its container. In addition, it was possible, for the first time, to identify unambiguously: the origin of segregation discontinuities associated with facet growth, the mode of nucleation and propagation of rotational twin boundaries, and the specific effect of mechanical-shock perturbations on segregation. The results obtained prove the advantageous conditions provided by outer space. Thus, fundamental data on solidification thought to be unattainable because of gravity-induced interference on earth are now within reach

Solidification (crystal growth) in the presence of gravitational forces

The surface tension behavior of doped and undoped InSb melts was investigated as well as their temperature and composition dependence. Surface tension in InSb melts was determined using the sessile-drop technique covering the temperature range from 530 C to 880 C. A linear regression of the data obtained shows that the temperature dependence of sigma is 392- (T-530) x (7000) plus or minus 10 dyne/cm. The d sigma/d Tau for intrinsics InSb is less than that previously reported. On the basis of the surface tension data obtained, it is concluded that surface tension induced convective flow velocities in InSb under reduced gravity conditions range from zero to at most 1 cm/sec. Accordingly, no interference with dopant segregation can be expected during growth in space because the momentum boundary layer (at the crystal melt interface) associated with any Marangoni-type convective flows would, at the given growth rate, be significantly larger than the predicted diffusion boundary layer thickness

Preparation of homogeneous vitreous materials for electronic and optical devices

Vitreous material builds up as series of solidified layers on inside walls of sealed quartz ampoule containing molten constituents of material, and forms well defined shapes to close dimensional tolerances. Ampoules are made of material which does not react with melt and has lower thermal expansion coefficient than solidified layer

Segregation during directional melting and its implications on seeded crystal growth: A theoretical analysis

Directional melting of binary systems, as encountered during seeding in melt growth, is analyzed for concurrent compositional changes at the crystal-melt interface. It is shown that steady state conditions cannot normally be reached during seeding and that the growth interface temperature at the initial stages of seeded growth is a function of backmelt conditions. The theoretical treatment is numerically applied to Hg1-xCdXTe and Ga-doped Ge

Extended Source Diffraction Effects Near Gravitational Lens Fold Caustics

Calculations are presented detailing the gravitational lens diffraction due to the steep brightness gradient of the limb of a stellar source. The lensing case studied is the fold caustic crossing. The limb diffraction signal greatly exceeds that due to the disk as a whole and should be detectable for white dwarf sources in our Galaxy and it's satellites with existing telescopes. Detection of this diffraction signal would provide an additional mathematical constraint, reducing the degeneracy among models of the lensing geometry. The diffraction pattern provides pico-arcsecond resolution of the limb profile.Comment: 19 pages including 17 figures, Accepted for publication in ApJ, Minor conceptual change from previous versio

Roll diffusion bonding of titanium alloy panels

Roll diffusion bonding technique is used for fabricating T-stiffened panel assemblies from titanium alloy. The single unit fabrication exhibits excellent strength characteristics under tensile and compressive loads. This program is applied to structures in which weight/strength ratio and integral construction are important considerations

Probing the Atmospheres of Planets Orbiting Microlensed Stars via Polarization Variability

We present a new method to identify and probe planetary companions of stars in the Galactic Bulge and Magellanic Clouds using gravitational microlensing. While spectroscopic studies of these planets is well beyond current observational techniques, monitoring polarization fluctuations during high magnification events induced by binary microlensing events will probe the composition of the planetary atmospheres, an observation which otherwise is currently unattainable even for nearby planetary systems.Comment: 7 pages, 2 figures. To appear in Astrophysical Journal Letter

Polymerization of Methyl Methacrylate by Heat-Catalyst and Gamma-Irradiation Methods

Methyl methacrylate (MMA) was bulk-polymerized with 0 to 4% crosslinker (ethylene glycol dimethacrylate, EGDM, and trimethylol propane trimethacrylate, TMPTM), initiated with 0.05 to 5% catalyst (Vazo) at 65-75 C or 0.1 to 1 Mrad/hr gamma radiation at 20 C. Heat-catalyzed MMA conversion to polymer vs. time was obtained directly from polymer mass, which indicated that about 90% conversion had occurred at the exothermic peak temperature. The time to the exothermic peak temperature was used to determine sample polymerization time. The over-all polymerization rate varied with the half-power of initiator concentration. An Arrhenius plot of the initiator-time data gave an activation energy of 18 kcal/mole. A log-log relationship was found between crosslinker concentration and polymerization time over the 65-75 C temperature and 0.1-0.4% initiator range. The crosslinkers were found equally efficient in reducing polymerization time. Peak exothermie temperature varied directly with time, irrespective of the initiator and crosslinker concentrations or bath temperature except as they affected time. In the irradiation tests, the crosslinkers exhibited different data fits: log-log with EGDM and semilog for TMPTM. The time-dose rate equation for uncrosslinked MMA was analogous to that for heat-catalyzed polymerization. Molecular weight of uncrosslinked PMMA was determined as a function of temperature and catalyst concentration, and dose rate. Similar molecular weights were obtained for heat-catalyzed polymerization at 65 C and gamma irradiation at 20 C for numerically the same initiator concentration (%) and does rate (Mrad/hr)