Estimating the return on investment of selected infection prevention and control interventions in healthcare settings for preparing against novel respiratory viruses: modelling the experience from SARS-CoV-2 among health workers.

Insufficient infection prevention and control (IPC) practices in healthcare settings increase the SARS-CoV-2 infection risk among health workers. This study aimed to examine the level of preparedness for future outbreaks. We modelled the experience from the COVID-19 pandemic and assessed the return on investment on a global scale of three IPC interventions to prevent SARS-CoV-2 infections among health workers: enhancing hand hygiene; increasing access to personal protective equipment (PPE); and combining PPE, with a scale-up of IPC training and education (PPE+). Our analysis covered seven geographic regions, representing a combination of World Health Organization (WHO) regions and the Organisation for Economic Co-operation and Development (OECD) countries. Across all regions, we focused on the first 180 days of the pandemic in 2020 between January 1st and June 30th. We used an extended version of a susceptible-infectious-recovered compartmental model to measure the level of IPC preparedness. Data were sourced from the WHO COVID-19 Detailed Surveillance Database. In all regions, the PPE + intervention would have averted the highest number of new SARS-CoV-2 infections compared to the other two interventions, ranging from 6562 (95% CI 4873-8779) to 38,170 (95% CI 33,853-41,901) new infections per 100,000 health workers in OECD countries and in the South-East Asia region, respectively. Countries in the South-East Asia region and non-OECD countries in the Western Pacific region were poised to achieve the highest level of savings by scaling up the PPE + intervention. Our results not only support efforts to make an economic case for continuing investments in IPC interventions to halt the COVID-19 pandemic and protect health workers, but could also contribute to efforts to improve preparedness for future outbreaks. This work was funded by WHO, with support by the German Federal Ministry of Health for the WHOResearch and Development Blueprint for COVID-19

The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers

The effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin buffer layer of silicon nitride (SiNx) with various thicknesses was achieved through the nitridation of the substrate at different nitridation times ranging from 0 to 660 s. The surface roughness of the GaN film, which was grown on the Si substrate 10 s, exhibited a root mean square (RMS) value of 1.12 nm for the surface roughness. However, further increments in the nitridation times in turn cause increments in the surface roughness in the GaN layers. The number of threading dislocation (TD) was counted from plan-view TEM (Transmission Electron Microscopy) images. The determined density of these threading dislocations was of the order of 9×109 cm-2. The sheet resistances of the GaN layers were measured. The average sheet resistance significantly increases from 2867 Ω sq-1 for sample A (without nitridation) to 8124 Ω sq-1 for sample F (with 660 s nitridation). The photoluminescence (PL) measurements of the samples nitridated at various nitridation times were done at a temperature range of 10-300 K. A strong band edge PL emission line, which was centered at approx. 3.453 eV along with its phonon replicas which was separated by approx. 92 meV in successive orders, was observed at 10 K. The full width at half maximum (FWHM) of this peak is approx. 14 meV, which indicates the reasonable optical quality of the GaN epilayers grown on Si substrate. At room temperature, the peak position and FWHM of this emission became 3.396 eV and 58 meV, respectively. © 2009 Elsevier Ltd. All rights reserved

Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD

An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of the layers were investigated by high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) techniques. The optical quality of the thick-GaN layer was also evaluated in detail by a photoluminescence (PL) measurement. It was found that the AlN buffer layer possesses high crystal quality and an atomically flat surface with a root-mean-square (rms) roughness of 0.16 nm. The screw-and edge-type dislocation densities of the thick-GaN layer were determined as 5.4 9 107 and 5.0 9 109 cm-2 by means of the mosaic crystal model, respectively. It was observed that the GaN layer has a smooth surface with an rms of 0.84 nm. Furthermore, the dark spot density of the GaN surface was estimated as 6.5 9 108 cm-2 over a scan area of 4 μm2. © Springer Science+Business Media, LLC 2010

Properties of Solutions in 2+1 Dimensions

We solve the Einstein equations for the 2+1 dimensions with and without scalar fields. We calculate the entropy, Hawking temperature and the emission probabilities for these cases. We also compute the Newman-Penrose coefficients for different solutions and compare them.Comment: 16 pages, 1 figures, PlainTeX, Dedicated to Prof. Yavuz Nutku on his 60th birthday. References adde

Supersymmetry and the relationship between a class of singular potentials in arbitrary dimensions

The eigenvalues of the potentials $V_{1}(r)=\frac{A_{1}}{r}+\frac{A_{2}}{r^{2}}+\frac{A_{3}}{r^{3}}+\frac{A_{4 }}{r^{4}}$ and $V_{2}(r)=B_{1}r^{2}+\frac{B_{2}}{r^{2}}+\frac{B_{3}}{r^{4}}+\frac{B_{4}}{r^ {6}}$, and of the special cases of these potentials such as the Kratzer and Goldman-Krivchenkov potentials, are obtained in N-dimensional space. The explicit dependence of these potentials in higher-dimensional space is discussed, which have not been previously covered.Comment: 13 pages article in LaTEX (uses standard article.sty). Please check "http://www1.gantep.edu.tr/~ozer" for other studies of Nuclear Physics Group at University of Gaziante

On the solutions of the Schrodinger equation with some molecular potentials: wave function ansatz

Making an ansatz to the wave function, the exact solutions of the $D$% -dimensional radial Schrodinger equation with some molecular potentials like pseudoharmonic and modified Kratzer potentials are obtained. The restriction on the parameters of the given potential, $\delta$ and $\eta$ are also given, where $\eta$ depends on a linear combination of the angular momentum quantum number $\ell$ and the spatial dimensions $D$ and $\delta$ is a parameter in the ansatz to the wave function. On inserting D=3, we find that the bound state eigensolutions recover their standard analytical forms in literature.Comment: 14 page

Human MLH1 deficiency predisposes to hematological malignancy and neurofibromatosis type 1

Heterozygous germ-line mutations in the DNA mismatch repair genes lead to hereditary nonpolyposis colorectal cancer. The disease susceptibility of individuals who constitutionally lack both wild-type alleles is unknown. We have identified three offspring in a hereditary nonpolyposis colorectal cancer family who developed hematological malignancy at a very early age, and at least two of them displayed signs of neurofibromatosis type 1 (NF1). DNA sequence analysis and allele-specific amplification in two siblings revealed a homozygous MLH1 mutation (C676T → Arg226Stop). Thus, a homozygous germ- line MLH1 mutation and consequent mismatch repair deficiency results in a mutator phenotype characterized by leukemia and/or lymphoma associated with neurofibromatosis type 1

Paving Plant-Food-Derived Bioactives as Effective Therapeutic Agents in Autism Spectrum Disorder

Autism spectrum disorder (ASD) is a neurodevelopmental disorder, where social and communication deficits and repetitive behaviors are present. Plant-derived bioactives have shown promising results in the treatment of autism. In this sense, this review is aimed at providing a careful view on the use of plant-derived bioactive molecules for the treatment of autism. Among the plethora of bioactives, curcumin, luteolin, and resveratrol have revealed excellent neuroprotective effects and can be effectively used in the treatment of neuropsychological disorders. However, the number of clinical trials is limited, and none of them have been approved for the treatment of autism or autism-related disorder. Further clinical studies are needed to effectively assess the real potential of such bioactive molecules.N.C.-M. acknowledges the Portuguese Foundation for Science and Technology under the Horizon 2020 Program (PTDC/PSI-GER/28076/2017)

Examination of the temperature related structural defects of InGaN/GaN solar cells

In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution X-ray Diffraction (HRXRD) and an Atomic Force Microscope (AFM). The plane angles, mosaic crystal sizes, mixed stress, dislocation intensities of the structure of the GaN and InGaN layers are determined. According to the test results, there are no general characteristic trends observed due to temperature at both structures. There are fluctuating failures determined at both structures as of 350 °C. The defect density increased on the GaN layer starting from 350 °C and reaching above 400 °C. A similar trend is observed on the InGaN layer, too. © 2015 Elsevier Ltd. All rights reserved

Constraints on the χ_(c1) versus χ_(c2) polarizations in proton-proton collisions at √s = 8 TeV

The polarizations of promptly produced χ_(c1) and χ_(c2) mesons are studied using data collected by the CMS experiment at the LHC, in proton-proton collisions at √s=8  TeV. The χ_c states are reconstructed via their radiative decays χ_c → J/ψγ, with the photons being measured through conversions to e⁺e⁻, which allows the two states to be well resolved. The polarizations are measured in the helicity frame, through the analysis of the χ_(c2) to χ_(c1) yield ratio as a function of the polar or azimuthal angle of the positive muon emitted in the J/ψ → μ⁺μ⁻ decay, in three bins of J/ψ transverse momentum. While no differences are seen between the two states in terms of azimuthal decay angle distributions, they are observed to have significantly different polar anisotropies. The measurement favors a scenario where at least one of the two states is strongly polarized along the helicity quantization axis, in agreement with nonrelativistic quantum chromodynamics predictions. This is the first measurement of significantly polarized quarkonia produced at high transverse momentum