Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. Using a scanning confocal approach we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from double- and few-layer by the width of the D' line: the single peak for single-layer graphene splits into different peaks for the double-layer. These findings are explained using the double-resonant Raman model based on ab-initio calculations of the electronic structure and of the phonon dispersion. We investigate the D line intensity and find no defects within the flake. A finite D line response originating from the edges can be attributed either to defects or to the breakdown of translational symmetry

Raman imaging of doping domains in graphene on SiO2

We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line -- the most significant Raman peak to identify single-layer graphene -- as a function of charging up to |n|~4 10^12 cm^-2. Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole-doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the line width of the 2D line is, in contrast to the G line, doping-independent making this quantity a reliable measure for identifying single-layer graphene

Multi-class SVMs for Image Classification using Feature Tracking

In this paper a novel representation for image classification is proposed which exploits the temporal information inherent in natural visual input. Image sequences are represented by a set of salient features which are found by tracking of visual features. In the context of a multi-class classification problem this representation is compared against a representation using only raw image data. The dataset consists of image sequences generated from a processed version of the MPI face database. We consider two types of multi-class SVMs and benchmark them against nearest-neighbor classifiers. By introducing a new set of SVM kernel functions we show that the feature representation significantly outperforms the view representation

The method of averages applied to the KS differential equations

A new approach for the solution of artificial satellite trajectory problems is proposed. The basic idea is to apply an analytical solution method (the method of averages) to an appropriate formulation of the orbital mechanics equations of motion (the KS-element differential equations). The result is a set of transformed equations of motion that are more amenable to numerical solution

Mapping the spin-dependent electron reflectivity of Fe and Co ferromagnetic thin films

Spin Polarized Low Energy Electron Microscopy is used as a spin dependent spectroscopic probe to study the spin dependent specular reflection of a polarized electron beam from two different magnetic thin film systems: Fe/W(110) and Co/W(110). The reflectivity and spin-dependent exchange-scattering asymmetry are studied as a function of electron kinetic energy and film thickness, as well as the time dependence. The largest value of the figure of merit for spin polarimetry is observed for a 5 monolayer thick film of Co/W(110) at an electron kinetic energy of 2eV. This value is 2 orders of magnitude higher than previously obtained with state of the art Mini-Mott polarimeter. We discuss implications of our results for the development of an electron-spin-polarimeter using the exchange-interaction at low energy.Comment: 5 pages, 4 figure

Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages

Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth and the resulting electronic properties of the patterned structures are compared for constant and modulated voltage applied to the conductive tip of the scanning force microscope. All the lithography has been performed in non-contact mode. Modulating the applied voltage enhances the aspect ratio of the oxide lines, which significantly strengthens the insulating properties of the lines on GaAs. In addition, the oxidation process is found to be more reliable and reproducible. Using this technique, a quantum point contact and a quantum wire have been defined and the electronic stability, the confinement potential and the electrical tunability are demonstrated to be similar to the oxidation with constant voltage.Comment: 7 pages, 7 figures, accepted by J. Appl. Phy

Comment on "Giant Plasticity of a Quantum Crystal"

In their Letter, Haziot et al. [Phys. Rev. Lett. 110 (2013) 035301] report a novel phenomenon of giant plasticity for hcp Helium-4 quantum crystals. They assert that Helium-4 exhibits mechanical properties not found in classical plasticity theory. Specifically, they examine high-quality crystals as a function of temperature and applied strain, where the shear modulus reaches a plateau and dissipation becomes close to zero; both quantities are reported to be independent of stress and strain, implying a reversible dissipation process and quantum tunneling. In this Comment, we show that these signatures can be explained with a classical model of thermally activated dislocation glide without the need to invoke quantum tunneling or dissipationless motion. Recently, we proposed a dislocation glide model in solid Helium-4 containing the dissipation contribution in the presence of other dislocations with qualitatively similar behavior [Zhou et al., Philos. Mag. Lett. 92 (2012) 608].Comment: 1 page, 1 figure, comment; minor revision

Electronic structure of the substitutional versus interstitial manganese in GaN

Density-functional studies of the electron states in the dilute magnetic semiconductor GaN:Mn reveal major differences for the case of the Mn impurity at the substitutional site Mn_Ga versus the interstitial site Mn_I. The splitting of the two-fold and the three-fold degenerate Mn(d)states in the gap are reversed between the two cases, which is understood in terms of the symmetry-controlled hybridization with the neighboring atoms. In contrast to Mn_Ga, which acts as a deep acceptor, Mn_I acts as a donor, suggesting the formation of Coulomb-stabilized complexes such as (Mn_Ga Mn_I Mn_Ga), where the acceptor level of Mn_Ga is passivated by the Mn_I donor. Formation of such passivated clusters might be the reason for the observed low carrier-doping efficiency of Mn in GaN. Even though the Mn states are located well inside the gap,the wave functions are spread far away from the impurity center. This is caused by the hybridization with the nitrogen atoms, which acquire small magnetic moments aligned with the Mn moment. Implications of the differences in the electronic structure for the optical properties are discussed