558 research outputs found
Spin-orientation-dependent spatial structure of a magnetic acceptor state in a zincblende semiconductor
The spin orientation of a magnetic dopant in a zincblende semiconductor
strongly influences the spatial structure of an acceptor state bound to the
dopant. The acceptor state has a roughly oblate shape with the short axis
aligned with the dopant's core spin. For a Mn dopant in GaAs the local density
of states at a site 8 angstrom away from the dopant can change by as much by
90% when the Mn spin orientation changes. These changes in the local density of
states could be probed by scanning tunneling microscopy to infer the magnetic
dopant's spin orientation.Comment: 5 pages, 4 figure
Spin Polarization Phenomena and Pseudospin Quantum Hall Ferromagnetism in the HgTe Quantum Well
The parallel field of a full spin polarization of the electron gas in a
\Gamma8 conduction band of the HgTe quantum well was obtained from the
magnetoresistance by three different ways in a zero and quasi-classical range
of perpendicular field component Bper. In the quantum Hall range of Bper the
spin polarization manifests in anticrossings of magnetic levels, which were
found to strongly nonmonotonously depend on Bper.Comment: to be published in AIP Conf. Proc.: 15-th International Conference on
Narrow Gap Systems (NGS-15
Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe
We present the first experimental study of the double-quantum-well (DQW)
system made of 2D layers with inverted energy band spectrum: HgTe. The
magnetotransport reveals a considerably larger overlap of the conduction and
valence subbands than in known HgTe single quantum wells (QW), which may be
regulated by an applied gate voltage . This large overlap manifests itself
in a much higher critical field separating the range above it where the
quantum peculiarities shift linearly with and the range below with a
complicated behavior. In the latter case the -shaped and double--shaped
structures in the Hall magnetoresistance are observed with their
scale in field pronouncedly enlarged as compared to the pictures observed in an
analogous single QW. The coexisting electrons and holes were found in the whole
investigated range of positive and negative as revealed from fits to the
low-field -shaped and from the Fourier analysis of
oscillations in . A peculiar feature here is that the found
electron density remains almost constant in the whole range of investigated
while the hole density drops down from the value a factor of 6 larger
than at extreme negative to almost zero at extreme positive
passing through the charge neutrality point. We show that this difference
between and stems from an order of magnitude larger density of states
for holes in the lateral valence band maxima than for electrons in the
conduction band minimum. We interpret the observed reentrant sign-alternating
between electronic and hole conductivities and its zero
resistivity state in the quantum Hall range of fields on the basis of a
calculated picture of magnetic levels in a DQW.Comment: 15 pages, 13 figure
The modeling of local distribution of the temperature photo-induced by ensemble of nanoparticles
Analysis of unstructured data of feedback in personal learning environment
In the article the analysis of text responses from the survey of students in a personal learning environment. The possibilities of text analysis by Intersystem i-Know tools are revealed. The main aspects of automatic detection of emotional shades of feedback are describedВ статье рассмотрен анализ текстовых ответов анкетирования студентов в персональной образовательной среде. Раскрываются возможности анализа текста инструментами InterSystems i-Know. Изложены основные аспекты автоматического выявления эмоциональных оттенков отзыво
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