Effect of Annealing on the Properties of Nanocrystalline CdS Thin Films Prepared by CBD Method

The CdS thin films were deposited on glass substrate by chemical bath deposition (CBD). The effect of annealing temperature on the morphological, structural, optical and electrical properties of the crystalline CdS films were investigated for different annealing temperature (as deposited, 300, 400 and 500 °C).The annealing time is 1 h. The materials have been prepared using simple aqueous solutions containing cadmium sulfate, as source of cadmium, and thiourea as source of sulfur and ammonium hydroxide as the complexing agent. The temperature of the bath was maintained at low temperature of 80 °C. The surface morphological properties studied by SEM and AFM respectively. The structural properties of CdS thin film was studied by X-ray diffraction. The optical parameter such as transmittance and energy band gap of the films with thermal annealing temperature was investigated by UV-Visible spectrophotometer. The variation of band gap values of CdS thin film samples were found to be in the range of 2.37 to 2.5 eV. Electrical resistivity measurements were carried out in four-probe Van Der Pauw geometry at room temperature by the Hall measurement. SEM image confirmed that film of smooth surface morphology

Properties Study of ZnS Thin Films Prepared by Spray Pyrolysis Method

Zinc sulfide (ZnS) is important II-VI semiconductors material for the development of various modern technologies and photovoltaic applications. ZnS thin film was prepared by using chemical spray pyrolysis technique. The starting solution is a mixture of 0.1 M zinc chloride as source of Zn and 0.05 M thiourea as source of S. The glass substrate temperature was varied in the range of 300 °C-400 °C to investigate the influence of substrate temperature on the structure, chemical composition, morphological and optical properties of ZnS films. The DRX analyses indicated that ZnS films have polycrystalline cubic structure with (111) preferential orientation and grain size varied from 25 to 60 nm, increasing with substrate temperature. The optical properties of these films have been studied in the wavelength range 300-2500 nm using UV-VIS spectro-photometer. The ZnS films has a band gap of 3.89 eV-3.96 eV

Properties Study of ZnS Thin Films Prepared by Spray Pyrolysis Method

Zinc sulfide (ZnS) is important II-VI semiconductors material for the development of various modern technologies and photovoltaic applications. ZnS thin film was prepared by using chemical spray pyrolysis technique. The starting solution is a mixture of 0.1 M zinc chloride as source of Zn and 0.05 M thiourea as source of S. The glass substrate temperature was varied in the range of 300 °C-400 °C to investigate the influence of substrate temperature on the structure, chemical composition, morphological and optical properties of ZnS films. The DRX analyses indicated that ZnS films have polycrystalline cubic structure with (111) preferential orientation and grain size varied from 25 to 60 nm, increasing with substrate temperature. The optical properties of these films have been studied in the wavelength range 300-2500 nm using UV-VIS spectro-photometer. The ZnS films has a band gap of 3.89 eV-3.96 eV

Compact and Highly Sensitive Bended Microwave Liquid Sensor Based on a Metamaterial Complementary Split-Ring Resonator

YesIn this paper, we present the design of a compact and highly sensitive microwave sensor based on a metamaterial complementary split-ring resonator (CSRR), for liquid characterization at microwave frequencies. The design consists of a two-port microstrip-fed rectangular patch resonating structure printed on a 20 × 28 mm2 Roger RO3035 substrate with a thickness of 0.75 mm, a relative permittivity of 3.5, and a loss tangent of 0.0015. A CSRR is etched on the ground plane for the purpose of sensor miniaturization. The investigated liquid sample is put in a capillary glass tube lying parallel to the surface of the sensor. The parallel placement of the liquid test tube makes the design twice as efficient as a normal one in terms of sensitivity and Q factor. By bending the proposed structure, further enhancements of the sensor design can be obtained. These changes result in a shift in the resonant frequency and Q factor of the sensor. Hence, we could improve the sensitivity 10-fold compared to the flat structure. Subsequently, two configurations of sensors were designed and tested using CST simulation software, validated using HFSS simulation software, and compared to structures available in the literature, obtaining good agreement. A prototype of the flat configuration was fabricated and experimentally tested. Simulation results were found to be in good agreement with the experiments. The proposed devices exhibit the advantage of exploring multiple rapid and easy measurements using different test tubes, making the measurement faster, easier, and more cost-effective; therefore, the proposed high-sensitivity sensors are ideal candidates for various sensing applications.This work was supported by the Moore4Medical project, funded within ECSEL JU in collaboration with the EU H2020 Framework Programme (H2020/2014–2020) under grant agreement H2020-ECSEL-2019-IA-876190, and the Fundação para a Ciência e Tecnologia (ECSEL/0006/2019). This project received funding in part from the DGRSDT (Direction Générale de la Recherche Scientifique et du Développement Technologique), MESRS (Ministry of Higher Education and Scientific Research), Algeria. This work was also supported by the General Directorate of Scientific Research and Technological Development (DGRSDT)–Ministry of Higher Education and Scientific Research (MESRS), Algeria, and funded by the FCT/MEC through national funds and, when applicable, co-financed by the ERDF, under the PT2020 Partnership Agreement under the UID/EEA/50008/2020 project

Optoelectronic characterization of CuInGa(S)2 thin films grown by spray pyrolysis for photovoltaic application

[EN] Copper-indium gallium disulfide (CIGS) is a good absorber for photovoltaic application. Thin films of CIGS were prepared by spray pyrolysis on glass substrates in the ambient atmosphere. The films were characterized by different techniques, such as structural, morphological, optical and electrical properties of CIGS films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), spectrophotometer and Hall effect, respectively. After optimization, the deposited films structure, grain size, and crystallinity became more important with an increase of annealing time at 370 degrees C for 20 min. Transmission electron microscopy (TEM) analysis shows that the interface sheets are well crystallized and the inter planer distance are 0.25 nm, 0.28 nm, and 0.36 nm. The atomic force microscopy (AFM) observation shows that the grain size and roughness can be tolerated by optimizing the annealing time. The strong absorbance and low transmittance were observed for the prepared films with a suitable energy bandgap about 1.46 eV. The Hall effect measurement system examined that CIGS films exhibited optimal electrical properties, resistivity, carrier mobility, and carrier concentration which were determined to be 4.22 x 10(6) omega cm, 6.18 x 10(2) cm(2) V-1 S-1 and 4.22 x 10(6) cm(-3), respectively. The optoelectronic properties of CIGS material recommended being used for the photovoltaic application.Prof. Bouchaib HARTITI, The Senior Associate at ICTP, is very grateful to ICTP for permanent support. Prof. Mohamed Ebn Touhami, Director of the University Center for Analysis, Expertise, Transfer of Technology and Incubation, Kenitra, Morocco, is very grateful to CUA2TI for financial support. Thanks to Doctor Diogo M.F. Santos for the supervision of Amal Bouich's work during her research in CeFEMA research center. The authors also thank researchers from CeFEMA (IST-ULisboa, Portugal) and CUA2TI (FS-Kenitra Morocco) for their help.Bouich, A.; Hartiti, B.; Ullah, S.; Ullah, H.; Ebn Touhami, M.; Santos, DMF.; Marí, B. (2019). Optoelectronic characterization of CuInGa(S)2 thin films grown by spray pyrolysis for photovoltaic application. Applied Physics A. 125(8):1-9. https://doi.org/10.1007/s00339-019-2874-4S191258T. Feurer, P. Reinhard, E. Avancini, B. Bissig, J. Löckinger, P. Fuchs, S. Buecheler, Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications. Prog. Photovolt. Res. Appl. 25(7), 645–667 (2017)A. Zegadi, M.A. Slifkin, M. Djamin, A.E. Hill, R.D. Tomlinson, A photoacoustic study of CuInxGa1− xSe2 alloys. Phys. Status Solidi (A) 133(2), 533–540 (1992)T.H. Sajeesh, A.R. Warrier, C.S. Kartha, K.P. Vijayakumar, Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS. Thin Solid Films 518(15), 4370–4374 (2010)J. Liu, D. Zhuang, H. Luan, M. Cao, M. Xie, X. Li, Preparation of Cu (In, Ga) Se2 thin film by sputtering from Cu (In, Ga) Se2 quaternary target. Progr. Nat. Sci. Mater. Int. 23(2), 133–138 (2013)M.I. Hossain, Fabrication and characterization of CIGS solar cells with In2 S3 buffer layer deposited by PVD technique. Chalcogenide Lett. 9(5), 185–191 (2012)M.A. Mughal, R. Engelken, R. Sharma, Progress in indium (III) sulfide (In2S3) buffer layer deposition techniques for CIS, CIGS, and CdTe-based thin film solar cells. Sol. Energy 120, 131–146 (2015)M. Powalla, M. Cemernjak, J. Eberhardt, F. Kessler, R. Kniese, H.D. Mohring, B. Dimmler, Large-area CIGS modules: Pilot line production and new developments. Sol. Energy Mater Sol. Cells 90(18–19), 3158–3164 (2006)M.E. Calixto, P.J. Sebastian, R.N. Bhattacharya, R. Noufi, Compositional and optoelectronic properties of CIS and CIGS thin films formed by electrodeposition. Sol. Energy Mater. Sol. Cells 59(1–2), 75–84 (1999)S. Jung, S. Ahn, J.H. Yun, J. Gwak, D. Kim, K. Yoon, Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique. Curr. Appl. Phys. 10(4), 990–996 (2010)S. R. Ovshinsky, X. Deng, R. Young, U.S. Patent No. 5,231,047. Washington, DC: U.S. Patent and Trademark Office (1993).M. Kaelin, D. Rudmann, A.N. Tiwari, Low cost processing of CIGS thin film solar cells. Sol. Energy 77(6), 749–756 (2004)Fangdan Jiang, Jiayou Feng, Effect of temperature on selenization process of metallic Cu–In alloy precursors. Thin Solid Films 515(4), 1950–1955 (2006)S. Shirakata, Y. Kannaka, H. Hasegawa, T. Kariya, S. Isomura, Properties of Cu (In, Ga) Se2 thin films prepared by chemical spray pyrolysis. Jpn. J. Appl. Phys. 38(9R), 4997 (1999)Y.K. Kumar, G.S. Babu, P.U. Bhaskar, V.S. Raja, Effect of starting-solution pH on the growth of Cu2ZnSnS4 thin films deposited by spray pyrolysis. Phys. Status Solidi (A) 206(7), 1525–1530 (2009)M. Ajili, M. Castagné, N.K. Turki, Characteristics of CuIn1− xGaxS2 thin films synthesized by chemical spray pyrolysis. J. Lumin. 150, 1–7 (2014)B.J. Babu, S. Velumani, A. Kassiba, R. Asomoza, J.A. Chavez-Carvayar, J. Yi, Deposition and characterization of graded Cu (In1-xGax) Se2 thin films by spray pyrolysis. Mater. Chem. Phys. 162, 59–68 (2015)S.F. Varol, G. Babür, G. Çankaya, U. Kölemen, Synthesis of sol–gel derived nano-crystalline ZnO thin films as TCO window layer: effect of sol aging and boron. RSC Adv. 4(100), 56645–56653 (2014)J.A. Frantz, R.Y. Bekele, V.Q. Nguyen, J.S. Sanghera, A. Bruce, S.V. Frolov, I.D. Aggarwal, Cu (In, Ga) Se2 thin films and devices sputtered from a single target without additional selenization. Thin Solid Films 519(22), 7763–7765 (2011)C. Calderón, G. Gordillo, P. Bartolo-Pérez, F. Mesa, Effect of the deposition conditions on the optical, morphological and compositional properties of CuIn1− xGaxSe2 thin films prepared by a multistage process. 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A Photoacoustic Study of Xenon Implantation in CuInSe2CuInSe_2

In this paper, we report a study on the optical properties of xenon ion implanted $CuInSe_2$ single crystals using a high resolution near-infrared photoacoustic spectrometer of the gas-microphone type. Samples of high quality of $CuInSe_2$, p-type conducting, have been implanted with $Xe^{+}$ at 40 keV with doses of $5 \times 10^{15},$ $10^{16}$ and $5 \times 10^{16}$ ions/$cm^2$. Photoacoustic spectra have been measured before and after implantation. A newly developed theoretical model based on a two-layer sample configuration has been used to single out the spectral dependence of the absorption coefficient of the implanted layer from that of the substrate. The absorption spectra were used to evaluate the gap energy and to establish ionization energies for several shallow and deep defect states. The resulting effects following the introduction of xenon into $CuInSe_2$ at different doses are discussed in the light of published literature

Photoacoustic study of CuInSe_2 single crystals

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Effects of H+ ion implantation and annealing on the properties of CuIn0.75Ga0.25Se2 thin films

In this paper the effects of post-deposition annealing followed by hydrogen ion-implantation on the properties of CuIn0.75Ga0.25Se2 thin films have been investigated. The samples were grown by flash evaporation onto glass substrates heated at temperature between room temperature and 200 degrees C. Selected samples were subsequently processed under several sets of conditions, including vacuum, selenium, inert (argon) and forming gas (a 9:1 mixture of N-2:H-2) followed by hydrogen ion-implantation. A high-resolution near-infrared photoacoustic spectrometer (PAS) of the gas-microphone type was used for room temperature analysis of non-radiative defect levels in the as-grown, annealed and hydrogen implanted thin films. The absorption coefficient has been derived from the PA spectra to determine the gap energy and to establish the activation energies for several defect-related energy levels. The changes observed in the PA spectra following annealing and ion-implantation has been directly correlated with the compositional and structural properties of the samples

A new method for automatic defects detection and diagnosis in rolling element bearings using Wald test

To detect and to diagnose, the localized defect in rolling bearings, a statistical model based on the sequential Wald test is established to generate a “hypothetical” signal which takes the state zero in absence of the defect, and the state one if a peak of resonance caused by the defect in the bearing is present. The autocorrelation of this signal allows one to reveal the periodicity of the defect and, consequently, one can establish the diagnosis by comparing the frequency of the defect with the characteristic frequencies of the bearing. The originality of this work is the use of the Wald test in the signal processing domain. Secondly, this method permits the detection without considering the level of noise and the number of observations, it can be used as a support for the Fast Fourier Transform. Finally, the simulated and experimental signals are used to show the efficiency of this method based on the Wald test

Optimisation des paramètres du vecteur formé : application au diagnostic vibratoire automatise des défauts d'une boite de vitesse d'un hélicoptère

Les processus de détérioration des machines tournantes, qu'ils soient accidentels (rupture fragile d'un composant) ou résultant de l'usure normale des éléments mécaniques, sont en général très complexes. Toutefois, l'apparition d'une détérioration se traduit par une modification du comportement de la machine et en particulier une évolution des niveaux vibratoires. De ce fait, il existe plusieurs procédures de diagnostic de défauts. Le choix d'une approche est lié à la connaissance que l'on souhaite acquérir sur le système, mais aussi à la complexité de ce système. Les techniques de surveillance par reconnaissance de formes sont plus élaborées que les simples tests statistiques et sont capables de détecter et de diagnostiquer les défaillances d'une manière automatisée. Pour cela, il suffit d'extraire un vecteur de paramètres, appelé vecteur forme (VF), sur chacune des mesures effectuées sur la machine. La règle de décision utilisée permet de classer les observations décrites par le vecteur forme par rapport aux différents modes de fonctionnement connus avec ou sans défaut. Les travaux présentés dans cet article portent sur la sélection d'un nombre réduit de paramètres pertinents pour représenter les signatures vibratoires des défauts d'une boîte de vitesse CH-46 d'un hélicoptère de la marine américaine. Nous avons pu montrer que les performances des méthodes de reconnaissance de formes (RdF) sont étroitement liées à la pertinence des indicateurs de défauts