Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects

科研費報告書収録論文(課題番号:18350092/研究代表者:大友明/高効率酸化亜鉛系青色・紫外発光素子の開発

Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study

Ab initio calculations in the local-density approximation have been carried out in SiC to determine the possible configurations of the isolated oxygen impurity. Equilibrium geometry and occupation levels were calculated. Substitutional oxygen in 3C-SiC is a relatively shallow effective mass like double donor on the carbon site (O-C) and a hyperdeep double donor on the Si site (O-Si). In 4H-SiC O-C is still a double donor but with a more localized electron state. In 3C-SiC O-C is substantially more stable under any condition than O-Si or interstitial oxygen (O-i). In 4H-SiC O-C is also the most stable one except for heavy n-type doping. We propose that O-C is at the core of the electrically active oxygen-related defect family found by deep level transient spectroscopy in 4H-SiC. The consequences of the site preference of oxygen on the SiC/SiO2 interface are discussed

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO2/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

The nonradiative lifetime (τNR) of the near-band-edge emission in various quality GaN samples is compared with the results of positron annihilation measurement, in order to identify the origin and to determine the capture-cross-section of the major intrinsic nonradiative recombination centers (NRCs). The room-temperature τNR of various n-type GaN samples increased with decreasing the concentration of divacancies composed of a Ga vacancy (VGa) and a N vacancy (VN), namely, VGaVN. The τNR value also increased with increasing the diffusion length of positrons, which is almost proportional to the inverse third root of the gross concentration of all point defects. The results indicate that major intrinsic NRC in n-type GaN is VGaVN. From the relationship between its concentration and τNR, its hole capture-cross-section is estimated to be about 7 × 10−14 cm2. Different from the case of 4H-SiC, the major NRCs in p-type and n-type GaN are different: the major NRCs in Mg-doped p-type GaN epilayers are assigned to multiple vacancies containing a VGa and two (or three) VNs, namely, VGa(VN)n (n = 2 or 3). The ion-implanted Mg-doped GaN films are found to contain larger size vacancy complexes such as (VGa)3(VN)3. In analogy with GaN, major NRCs in Al0.6Ga0.4N alloys are assigned to vacancy complexes containing an Al vacancy or a VGa

Application of age-momentum correlation measurements for studies of the formation of positronium and its reactions in liquids

The age-momentum correlation measurements were applied to the study of annihilation characteristics of positrons and positronium (Ps) in benzene, carbontetrachloride and those mixtures. The observed lifetime spectra and Doppler broadening profiles were decomposed into two-components. The inhibition of the Ps formation by carbontetrachloride was observed in a momentum dependence of the lifetime and in a time dependence of the S parameter