An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition

C. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Fundação para a Ciência e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research.A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.authorsversionpublishe

Separation of particles from suspensions using transverse force field: a mass transport analysis

We report the calculation of the efficiency for particle separation processes occurring in suspension under transverse force field in a circular duct. The calculation has been performed for a laminar fluid flow directed toward the duct vertical axis. The force field acting on the suspended particles only, is orthogonal to the duct. In the dimensionless calculations occurs a dimensionless group, Ca, which provides a tool for the dimensioning of the purification section

High-temperature oxidation of CrN/AlN multilayer coatings §

Abstract Experiments are reported on sputter depth profiling of CrN/AlN multilayer abrasive coatings by secondary ion mass spectrometry (SIMS) coupled with sample current measurements (SCM). The coatings were deposited by a closed-field unbalanced magnetron sputtering. It is shown that after oxidation tests, performed in air at 900 8C for 2 h and at 1100 8C for 4 h, the layered structure begins to degrade but is not destroyed completely. Oxidation at 1100 8C for 20 h causes total destruction of the coatings that can be attributed to a fast diffusion of oxygen, nickel, manganese and other elements along defect paths (grain boundaries, dislocations, etc.) in the coating. There are practically no nitrides in the near-surface layer after such a treatment and all the metallic components are in the oxidized form as follows from the data obtained by X-ray photoelectron spectroscopy (XPS). According to XPS and mass-resolved ion scattering spectrometry (MARISS), the surface content of Al in the heat-treated coatings has decreased in comparison with the as-received sample and that of Cr increased. Both XPS and MARISS data exhibit real increase in superficial concentration of the substrate materials (Mn and Ni) that is controversial if using SIMS alone. SCM turned out to be an informative depth profiling method complementary to more expensive and complicated SIMS, being particularly useful for structures with different secondary electron emission properties of the layers. SCM with predetermined SIMS calibration allows a routine characterization of coatings and other multilayer structures, particularly, in situations where the expenses of analysis can be justified. www.elsevier.com/locate/apsus

Quantifying the surface modification induced by the argon cluster ion bombardment of KGd(WO4)2: Nd single crystal

The damage in an inorganic single crystal surface caused by gas cluster ion bombardment is still an open issue. In this work, the influence of the kinetic energy per atom in the clusters E/N on the physicochemical structure of KGd(WO4)2:Nd single crystals was evaluated using XPS, Raman spectroscopy and XRD techniques. The highenergy mode with an energy per atom in the cluster E/N of about 100 eV provides a sufficient sputtering efficiency, while the low-energy mode with an energy of a several eV provides the minimal surface damage. The results revealed no substantial damage to the subsurface crystal structure after the cluster bombardment processing. Nevertheless, the unexpected increase in the relative concentration of O atoms by 12% and depletion of K atoms by a factor of 2 in the subsurface layer of KGd(WO4)2:Nd crystals were detected. The features of surface sputtering of inorganic single crystals at different E/N-modes are discussed