Real time image subtraction and "exclusive or" operation using a self-pumped phase conjugate mirror

Real time "exclusive or" operation with an interferometer using a self-pumped phase conjugate mirror is reported. Also, results of image subtraction and intensity inversion are shown

Electronic Interface Reconstruction at Polar-Nonpolar Mott Insulator Heterojunctions

We report on a theoretical study of the electronic interface reconstruction (EIR) induced by polarity discontinuity at a heterojunction between a polar and a nonpolar Mott insulators, and of the two-dimensional strongly-correlated electron systems (2DSCESs) which accompany the reconstruction. We derive an expression for the minimum number of polar layers required to drive the EIR, and discuss key parameters of the heterojunction system which control 2DSCES properties. The role of strong correlations in enhancing confinement at the interface is emphasized.Comment: 7 pages, 6 figures, some typos correcte

Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.Comment: 5 pages, 3 figures, 1 tabl

First-Principles Study on Leakage Current through Si/SiO2_2 Interface

The relationship between the presence of defects at the stacking structure of the Si/SiO$_2$ interface and leakage current is theoretically studied by first-principles calculation. I found that the leakage current through the interface with dangling bonds is 530 times larger than that without any defects, which is expected to lead to dielectric breakdown. The direction of the dangling bonds is closely related to the performance of the oxide as an insulator. In addition, it is proved that the termination of the dangling bonds by hydrogen atoms is effective for reducing the leakage current.Comment: 11 pages. to be published in Phys. Rev.

Physical transformations between quantum states

Given two sets of quantum states {A_1, ..., A_k} and {B_1, ..., B_k}, represented as sets of density matrices, necessary and sufficient conditions are obtained for the existence of a physical transformation T, represented as a trace-preserving completely positive map, such that T(A_i) = B_i for i = 1, ..., k. General completely positive maps without the trace-preserving requirement, and unital completely positive maps transforming the states are also considered

A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures

Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.Comment: 6 pages, 4 figures, minor changes from the previous version

Spintronics for electrical measurement of light polarization

The helicity of a circularly polarized light beam may be determined by the spin direction of photo-excited electrons in a III-V semiconductor. We present a theoretical demonstration how the direction of the ensuing electron spin polarization may be determined by electrical means of two ferromagnet/semiconductor Schottky barriers. The proposed scheme allows for time-resolved detection of spin accumulation in small structures and may have a device application.Comment: Revised version, 8 two-column pages, 5 figures; Added: a comprehensive time dependent analysis, figures 3b-3c & 5, equations 6 & 13-16 and 3 references. submitted to Phys. Rev.

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800 K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.Comment: 5 pages, 4 figure

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

We develop an analytical device model for graphene bilayer field-effect transistors (GBL-FETs) with the back and top gates. The model is based on the Boltzmann equation for the electron transport and the Poisson equation in the weak nonlocality approximation for the potential in the GBL-FET channel. The potential distributions in the GBL-FET channel are found analytically. The source-drain current in GBL-FETs and their transconductance are expressed in terms of the geometrical parameters and applied voltages by analytical formulas in the most important limiting cases. These formulas explicitly account for the short-gate effect and the effect of drain-induced barrier lowering. The parameters characterizing the strength of these effects are derived. It is shown that the GBL-FET transconductance exhibits a pronounced maximum as a function of the top-gate voltage swing. The interplay of the short-gate effect and the electron collisions results in a nonmonotonic dependence of the transconductance on the top-gate length.Comment: 12 pages, 7 figure