Amorphous interface layer in thin graphite films grown on the carbon face of SiC

Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not to cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Annular dark field scanning transmission electron microscopy (ADF-STEM) images and electron energy loss spectroscopy (EELS) demonstrate that the amorphous layer is a carbon-rich composition of Si/C. The amorphous layer is clearly observed in samples grown at 1600{\deg}C for a range of growth pressures in argon, but not at 1500{\deg}C, suggesting a temperature-dependent formation mechanism

Negative curves on algebraic surfaces

We study curves of negative self-intersection on algebraic surfaces. We obtain results for smooth complex projective surfaces X on the number of reduced, irreducible curves C of negative self-intersection C^2. The only known examples of surfaces for which C^2 is not bounded below are in positive characteristic, and the general expectation is that no examples can arise over the complex numbers. Indeed, we show that the idea underlying the examples in positive characteristic cannot produce examples over the complex number field. The previous version of this paper claimed to give a counterexample to the Bounded Negativity Conjecture. The idea of the counterexample was to use Hecke translates of a smooth Shimura curve in order to create an infinite sequence of curves violating the Bounded Negativity Conjecture. To this end we applied Hirzebruch Proportionality to all Hecke translates, simultaneously desingularized by a version of Jaffee's Lemma which exists in the literature but which turns out to be false. Indeed, in the new version of the paper, we show that only finitely many Hecke translates of a special subvariety of a Hilbert modular surface remain smooth. This new result is based on work done jointly with Xavier Roulleau, who has been added as an author. The other results in the original posting of this paper remain unchanged.Comment: 14 pages, X. Roulleau added as author, counterexample to Bounded Negativity Conjecture withdrawn and replaced by a proof that there are only finitely many smooth Shimura curves on a compact Hilbert modular surface; the other results in the original posting of this paper remain unchange

Fabrication of conductive interconnects by Ag migration in Cu-Ag core-shell nanoparticles

Fabrication of conductive nanoparticle films is observed in Cu-Ag core-shell nanoparticles by fast diffusion of Ag at 220 degrees C from particle surfaces, leading to the formation of sintered necks of Ag at the initial particle-particle contacts. Transmission electron microscopy showed that the necks were pure Ag and that particle surfaces away from the contacts were nearly Ag-free. The extent of neck formation is controllable by the choice of initial Ag thickness. Analysis of the thermodynamics of the Ag-Cu system and the relative diffusivities of Ag and Cu provide criteria for fabrication of other core-shell two-phase systems by the same mechanism

Nanometer-scale sharpness in corner-overgrown heterostructures

A corner-overgrown GaAs/AlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile of 3.5 nm width. In the AlGaAs layers we observe self-ordered diagonal stripes, precipitating exactly at the corner, which are regions of increased Al content measured by an XEDS analysis. A quantitative model for self-limited growth is adapted to the present case of faceted MBE growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that MBE corner overgrowth maintains nm-sharpness even after microns of growth, allowing the realization of corner-shaped nanostructures.Comment: 4 pages, 3 figure