Conductance of p-n-p graphene structures with 'air-bridge' top gates

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.Comment: to be published in Nano Letter

Density of states and zero Landau level probed through capacitance of graphene

We report capacitors in which a finite electronic compressibility of graphene dominates the electrostatics, resulting in pronounced changes in capacitance as a function of magnetic field and carrier concentration. The capacitance measurements have allowed us to accurately map the density of states D, and compare it against theoretical predictions. Landau oscillations in D are robust and zero Landau level (LL) can easily be seen at room temperature in moderate fields. The broadening of LLs is strongly affected by charge inhomogeneity that leads to zero LL being broader than other levels

Impurities as a source of flicker noise in graphene

We experimentally study the effect of different scattering potentials on the flicker noise observed in graphene devices on silica substrates. The noise in nominally identical devices is seen to behave in two distinct ways as a function of carrier concentration, changing either monotonically or nonmonotonically. We attribute this to the interplay between long- and short-range scattering mechanisms. Water is found to significantly enhance the noise magnitude and change the type of the noise behaviour. By using a simple model, we show that water is a source of long-range scattering.Comment: 4 pages, 4 figure

Giant Nonlocality near the Dirac Point in Graphene

Transport measurements have been a powerful tool for uncovering new electronic phenomena in graphene. We report nonlocal measurements performed in the Hall bar geometry with voltage probes far away from the classical path of charge flow. We observe a large nonlocal response near the Dirac point in fields as low as 0.1T, which persists up to room temperature. The nonlocality is consistent with the long-range flavor currents induced by lifting of spin/valley degeneracy. The effect is expected to contribute strongly to all magnetotransport phenomena near the neutrality point

Atomically thin boron nitride: a tunnelling barrier for graphene devices

We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.Comment: 7 pages, 5 figure

How close can one approach the Dirac point in graphene experimentally?

The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap

Prospects for the discovery of the next new element: Influence of projectiles with Z > 20

The possibility of forming new superheavy elements with projectiles having Z > 20 is discussed. Current research has focused on the fusion of 48Ca with actinides targets, but these reactions cannot be used for new element discoveries in the future due to a lack of available target material. The influence on reaction cross sections of projectiles with Z > 20 have been studied in so-called analog reactions, which utilize lanthanide targets carefully chosen to create compound nuclei with energetics similar to those found in superheavy element production. The reactions 48Ca, 45Sc, 50Ti, 54Cr + 159Tb, 162Dy have been studied at the Cyclotron Institute at Texas A&M University using the Momentum Achromat Recoil Spectrometer. The results of these experimental studies are discussed in terms of the influence of collective enhancements to level density for compound nuclei near closed shells, and the implications for the production of superheavy elements. We have observed no evidence to contradict theoretical predictions that the maximum cross section for the 249Cf(50Ti, 4n)295120 and 248Cm(54Cr, 4n)298120 reactions should be in the range of 10-100 fb.Comment: An invited talk given by Charles M. Folden III at the 11th International Conference on Nucleus-Nucleus Collisions (NN2012), San Antonio, Texas, USA, May 27-June 1, 2012. Also contains information presented by Dmitriy A. Mayorov and Tyler A. Werke in separate contributions to the conference. This contribution will appear in the NN2012 Proceedings in Journal of Physics: Conference Series (JPCS