41,649 research outputs found

    Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot

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    In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of inter-dot level spacing and magnetic field. With varied inter-dot tunnel coupling we can identify different dominant spin relaxation mechanisms. Applying a strong out-of-plane magnetic field causes an avoided singlet-triplet level crossing, from which the heavy hole g-factor ∼\sim 0.93, and the strength of spin-orbit interaction ∼\sim 110 μ\mueV, can be obtained. The demonstrated strong spin-orbit interaction of heavy hole promises fast local spin manipulation using only electrical fields, which is of great interest for quantum information processing.Comment: 15 pages, 4 figure

    Electric field induced charge noise in doped silicon: ionization of phosphorus donors

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    We report low frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the substrates are in the insulating regime. By measuring the SET Coulomb oscillations, we find a gate voltage dependent charge noise on the more heavily doped substrate. This charge noise, which is seen to have a 1/f spectrum, is attributed to the electric field induced tunneling of electrons from their phosphorus donor potentials.Comment: 4 page, 3 figure

    Charge shelving and bias spectroscopy for the readout of a charge-qubit on the basis of superposition states

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    Charge-based qubits have been proposed as fundamental elements for quantum computers. One commonly proposed readout device is the single-electron transistor (SET). SETs can distinguish between localized charge states, but lack the sensitivity to directly distinguish superposition states, which have greatly enhanced coherence times compared with position states. We propose introducing a third dot, and exploiting energy dependent tunnelling from the qubit into this dot (bias spectroscopy) for pseudo-spin to charge conversion and superposition basis readout. We introduce an adiabatic fast passage-style charge pumping technique which enables efficient and robust readout via charge shelving, avoiding problems due to finite SET measurement time.Comment: 4 pages, 3 figures, note slightly changed title, replaced with journal versio

    Booms and busts: consumption, house prices and expectations

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    Over much of the past 25 years, the cycles of house price and consumption growth have been closely synchronised. Three main hypotheses for this co-movement have been proposed in the literature. First, that an increase in house prices raises households’ wealth, particularly for those in a position to trade down the housing ladder, which increases their desired level of expenditure. Second, that house price growth increases the collateral available to homeowners, reducing credit constraints and thereby facilitating higher consumption. And third, that house prices and consumption have tended to be influenced by common factors. This paper finds that the relationship between house prices and consumption is stronger for younger than older households, which appears to contradict the wealth channel. These findings therefore suggest that common causality has been the most important factor behind the link between house price and consumption
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