We report low frequency charge noise measurement on silicon substrates with
different phosphorus doping densities. The measurements are performed with
aluminum single electron transistors (SETs) at millikelvin temperatures where
the substrates are in the insulating regime. By measuring the SET Coulomb
oscillations, we find a gate voltage dependent charge noise on the more heavily
doped substrate. This charge noise, which is seen to have a 1/f spectrum, is
attributed to the electric field induced tunneling of electrons from their
phosphorus donor potentials.Comment: 4 page, 3 figure
