FLASH: Randomized Algorithms Accelerated over CPU-GPU for Ultra-High Dimensional Similarity Search

We present FLASH (\textbf{F}ast \textbf{L}SH \textbf{A}lgorithm for \textbf{S}imilarity search accelerated with \textbf{H}PC), a similarity search system for ultra-high dimensional datasets on a single machine, that does not require similarity computations and is tailored for high-performance computing platforms. By leveraging a LSH style randomized indexing procedure and combining it with several principled techniques, such as reservoir sampling, recent advances in one-pass minwise hashing, and count based estimations, we reduce the computational and parallelization costs of similarity search, while retaining sound theoretical guarantees. We evaluate FLASH on several real, high-dimensional datasets from different domains, including text, malicious URL, click-through prediction, social networks, etc. Our experiments shed new light on the difficulties associated with datasets having several million dimensions. Current state-of-the-art implementations either fail on the presented scale or are orders of magnitude slower than FLASH. FLASH is capable of computing an approximate k-NN graph, from scratch, over the full webspam dataset (1.3 billion nonzeros) in less than 10 seconds. Computing a full k-NN graph in less than 10 seconds on the webspam dataset, using brute-force ($n^2D$), will require at least 20 teraflops. We provide CPU and GPU implementations of FLASH for replicability of our results

Raman scattering study of electron-doped Prx_xCa1−x_{1-x}Fe2_2As2_2 superconductors

Temperature-dependent polarized Raman spectra of electron-doped superconducting Pr$_x$Ca$_{1-x}$Fe$_2$As$_2$ ($x \approx 0.12$) single crystals are reported. All four allowed by symmetry even-parity phonons are identified. Phonon mode of B$_{1g}$ symmetry at 222 cm$^{-1}$, which is associated with the c-axis motion of Fe ions, is found to exhibit an anomalous frequency hardening at low temperatures, that signals non-vanishing electron-phonon coupling in the superconducting state and implies that the superconducting gap magnitude $2\Delta_c < 27$meV.Comment: 4 pages, 3 figure

A hybrid stabilization technique for simulating water wave - Structure interaction by incompressible Smoothed Particle Hydrodynamics (ISPH) method

The Smoothed Particle Hydrodynamics (SPH) method is emerging as a potential tool for studying water wave related problems, especially for violent free surface flow and large deformation problems. The incompressible SPH (ISPH) computations have been found not to be able to maintain the stability in certain situations and there exist some spurious oscillations in the pressure time history, which is similar to the weakly compressible SPH (WCSPH). One main cause of this problem is related to the non-uniform and clustered distribution of the moving particles. In order to improve the model performance, the paper proposed an efficient hybrid numerical technique aiming to correct the ill particle distributions. The correction approach is realized through the combination of particle shifting and pressure gradient improvement. The advantages of the proposed hybrid technique in improving ISPH calculations are demonstrated through several applications that include solitary wave impact on a slope or overtopping a seawall, and regular wave slamming on the subface of open-piled structure

Ge quantum dot arrays grown by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface: nucleation, morphology and CMOS compatibility

Issues of morphology, nucleation and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (<600 deg C) and high (>600 deg. C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts---pyramids and wedges---are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.Comment: 30 pages, 11 figure

Relationships between Campi Flegrei and Mt. Somma volcanism: evidence from melt inclusions in clinopyroxene phenocrysts from volcanic breccia xenoliths

We present compositions of reheated melt inclusions in clinopyroxene phenocrysts from three mafic xenoliths in Breccia Museo, Campi Flegrei, Italy. Melt inclusion compositions are remarkably different from the compositions of known contemporary Campi Flegrei lavas, being significantly enriched in K2O and depleted in Na2O. Some differences are also evident in FeO (total Fe as FeO) and TiO2 contents. The clinopyroxene phenocrysts could not have crystallised from Campi Flegrei magmas. We suggest that they originated from a volcanic system genetically very similar to, and possibly linked with, the > 14 ka volcanic system of Mt. Somma, another Campanian volcano ~30km east from Campi Flegrei, from which Vesuvius subsequently developed. This result indicates a close relationship (or link) between the two volcanic systems which have until now been considered separate. We speculate that the link was established prior to eruption of the Neapolitan Yellow Tuff (NYT) (~12 ka). The xenoliths were derived from a volcanic system older than the host breccias themselves. We suggest that this older volcanism had close similarities with the volcanism of the older products of Mt. Somma (~25 ka)

Dynamics of glass phases in the two-dimensional gauge glass model

Large-scale simulations have been performed on the current-driven two-dimensional XY gauge glass model with resistively-shunted-junction dynamics. It is observed that the linear resistivity at low temperatures tends to zero, providing strong evidence of glass transition at finite temperature. Dynamic scaling analysis demonstrates that perfect collapses of current-voltage data can be achieved with the glass transition temperature $T_{g}=0.22$, the correlation length critical exponent $\nu =1.8$, and the dynamic critical exponent $z=2.0$. A genuine continuous depinning transition is found at zero temperature. For creeping at low temperatures, critical exponents are evaluated and a non-Arrhenius creep motion is observed in the glass phase.Comment: 10 pages, 6 figure

STM and RHEED study of the Si(001)-c(8x8) surface

The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnelling microscopy (STM) and reflected high energy electron diffraction (RHEED). RHEED patterns corresponding to (2x1) and (4x4) structures were observed during sample treatment. The (4x4) reconstruction arose at T<600C after annealing. The reconstruction was observed to be reversible: the (4x4) structure turned into the (2x1) one at T>600C, the (4x4) structure appeared again at recurring cooling. The c(8x8) reconstruction was revealed by STM at room temperature on the same samples. A fraction of the surface area covered by the c(8x8) structure decreased as the sample cooling rate was reduced. The (2x1) structure was observed on the surface free of the c(8x8) one. The c(8x8) structure has been evidenced to manifest itself as the (4x4) one in the RHEED patterns. A model of the c(8x8) structure formation has been built on the basis of the STM data. Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed.Comment: 26 pages, 12 figure