A low-voltage activated, transient calcium current is responsible for the time-dependent depolarizing inward rectification of rat neocortical neurons in vitro

Intracellular recordings were obtained from rat neocortical neurons in vitro. The current-voltage-relationship of the neuronal membrane was investigated using current- and single-electrode-voltage-clamp techniques. Within the potential range up to 25 mV positive to the resting membrane potential (RMP: –75 to –80 mV) the steady state slope resistance increased with depolarization (i.e. steady state inward rectification in depolarizing direction). Replacement of extracellular NaCl with an equimolar amount of choline chloride resulted in the conversion of the steady state inward rectification to an outward rectification, suggesting the presence of a voltage-dependent, persistent sodium current which generated the steady state inward rectification of these neurons. Intracellularly injected outward current pulses with just subthreshold intensities elicited a transient depolarizing potential which invariably triggered the first action potential upon an increase in current strength. Single-electrode-voltage-clamp measurements reveled that this depolarizing potential was produced by a transient calcium current activated at membrane potentials 15–20 mV positive to the RMP and that this current was responsible for the time-dependent increase in the magnitude of the inward rectification in depolarizing direction in rat neocortical neurons. It may be that, together with the persistent sodium current, this calcium current regulates the excitability of these neurons via the adjustment of the action potential threshold

Thermoelectric cross-plane properties on p- and n-Ge/SixGe1-x superlattices

Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/SixGe1-x superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si0.5Ge0.5 superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si0.3Ge0.7 superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period

Comparative study of annealed and high temperature grown ITO and AZO films for solar energy applications

We present the optical and electrical properties of ITO and AZO films fabricated directly on silicon substrates under several growth and annealing temperatures, as well as their potential performance when used as low emissivity coatings in hybrid photovoltaic-thermal systems. We use broadband spectroscopic ellipsometry measurements (from 300 nm to 20 μm) to obtain a consistent model for the permittivity of each of the films. The best performance is found using the properties of the ITO film grown at 250 °C, with a state of the art resistivity of 0.2 mΩ-cm and an optimized thickness of 75 nm which leads to an estimated 50% increase in the extracted power compared to a standard diffused silicon solar cell. The Hall mobility and resistivity measurements of all the films are also provided, complementing and supporting the observed optical properties

Analysis of Serve and Serve-Return Strategies in Elite Male and Female Padel

This aim of this study was to analyze serve and return statistics in elite padel players regarding courtside and gender. The sample contained 668 serves and 600 returns of serves from 14 matches (7 male and 7 female) of the 2019 Masters Finals World Padel Tour. Variables pertaining to serve (number, direction, court side and effectiveness), return of serve (direction, height, stroke type and effectiveness) and point outcome were registered through systematic observation. The main results showed that the serving pair had an advantage in rallies, under 8 shots in women and under 12 shots in men. Statistical differences according to gender and court side were found. Female players execute more backhand and cross-court returns and use more lobs than men. On the right court, serves are more frequently aimed at the "T" and more down the line returns are executed when compared to the left side. Such knowledge could be useful to develop appropriate game strategies and to design specific training exercises based on actual competition context

Thermal emissivity of silicon heterojunction solar cells

The aim of this work is to evaluate whether silicon heterojunction solar cells, lacking highly emissive, heavily doped silicon layers, could be better candidates for hybrid photovoltaic thermal collectors than standard aluminium-diffused back contact solar cells. To this end, the near and mid infrared emissivity of full silicon heterojunction solar cells, as well as of its constituent materials – crystalline silicon wafer, indium tin oxide, n-, i- and p-type amorphous silicon – have been assessed by means of ellipsometry and FTIR. The experimental results show that the thermal emissivity of these cells is actually as high as in the more traditional structures, ~80% at 8 μm. Detailed optical modelling combining raytracing and transfer matrix formalism shows that the emissivity in these cells originates in the transparent conductive oxide layers themselves, where the doping is not high enough to result in a reflection that exceeds the increased free carrier absorption. Further modelling suggests that it is possible to obtain lower emissivity solar cells, but that a careful optimization of the transparent conductive layer needs to be done to avoid hindering the photovoltaic performance

High Efficiency Planar Geometry Germanium-on-silicon Single-photon Avalanche Diode Detectors

This paper presents the performance of 26 μm and 50 μm diameter planar Ge-on-Si single-photon avalanche diode (SPAD) detectors. The addition of germanium in these detectors extends the spectral range into the short-wave infrared (SWIR) region, beyond the capability of already well-established Si SPAD devices. There are several advantages for extending the spectral range into the SWIR region including: reduced eye-safety laser threshold, greater attainable ranges, and increased depth resolution in range finding applications, in addition to the enhanced capability to image through obscurants such as fog and smoke. The time correlated single-photon counting (TCSPC) technique has been utilized to observe record low dark count rates, below 100 kHz at a temperature of 125 K for up to a 6.6 % excess bias, for the 26 μm diameter devices. Under identical experimental conditions, in terms of excess bias and temperature, the 50 μm diameter device consistently demonstrates dark count rates a factor of 4 times greater than 26 μm diameter devices, indicating that the dark count rate is proportional to the device volume. Single-photon detection efficiencies of up to ~ 29 % were measured at a wavelength of 1310 nm at 125 K. Noise equivalent powers (NEP) down to 9.8 × 10-17 WHz-1/2 and jitters < 160 ps are obtainable, both significantly lower than previous 100 μm diameter planar geometry devices, demonstrating the potential of these devices for highly sensitive and high-speed imaging in the SWIR

Afterpulsing in Ge-on-Si single-photon avalanche diodes

In this letter, we investigate afterpulsing in 26 and 100 μm diameter planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors, by use of the double detector gating method with a gate width of 50 ns. Ge-on-Si SPADs were found to exhibit a 1% afterpulsing probability at a delay time of 200 μs and temperature of 78 K, and 130 μs at a temperature of 150 K. These delay times were measured with an excess bias of 3.5% applied, which corresponded to a single-photon detection efficiency of 15% at 1.31 μm . We demonstrate that reducing the detector diameter can also be an effective way to restrict afterpulsing in this material system

Are there differences in acute phase inflammation markers regarding the type of heart failure?

This study aimed to determine if there are differences in inflammatory markers in the acute phase between systolic heart failure and heart failure with preserved systolic function. One hundred and thirty-one patients with acute heart failure were recruited consecutively. At admission, plasma fibrinogen, C-reactive protein, sialic acid, von Willebrand factor, vascular endothelial growth factor, interleukin-6 and NTproBNP were all evaluated. If the ejection fraction was 45% or over patients were included in the HF-PSF group; the remaining patients were included in the SHF group. The HF-PSF patients were older (72±10 vs 63±12 years, P<0.001), presented a higher rate of atrial fibrillation (56.1 vs 21.3%, P<0.001), and had a lower rate of hemoglobin (12.2±2 vs 13.3±2.1 g/dL, P<0.01). No significant differences were observed in the inflammation markers analyzed among SHF and HF-PSF groups. In the acute phase of heart failure there is a marked elevation of inflammatory markers but there are no differences in the inflammatory markers analyzed between the two different types of heart failure