Strong enhancement of direct magnetoelectric effect in strained ferroelectric-ferromagnetic thin-film heterostructures

The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is shown that the ME response strongly depends on the initial strain state of the film. The ME polarization coefficient of the heterostructures involving Terfenol-D substrates and compressively strained lead zirconate titanate (PZT) films, which stabilize in the out-of-plane polarization state, is found to be comparable to that of bulk PZT/Terfenol-D laminate composites. At the same time, the ME voltage coefficient reaches a giant value of 50 V/(cm Oe), which greatly exceeds the maximum observed static ME coefficients of bulk composites. This remarkable feature is explained by a favorable combination of considerable strain sensitivity of polarization and a low electric permittivity in compressively strained PZT films. The theory also predicts a further dramatic increase of ME coefficients at the strain-induced transitions between different ferroelectric phases.Comment: 7 pages, 3 figure

Low-T_c Josephson junctions with tailored barrier

Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was defined by optical lithography and controlled etching. The step height is on the scale of a few angstroms. Experimentally determined junction parameters by current-voltage characteristics and Fraunhofer pattern indicate an uniform F-layer thickness and the same interface transparencies for etched and non-etched F-layers. This technique could be used to tailor low-T_c Josephson junctions having controlled critical current densities at defined parts of the junction area, as needed for tunable resonators, magnetic-field driven electronics or phase modulated devices.Comment: 6 pages, 6 figures, small changes, to be published by JA

High quality ferromagnetic 0 and pi Josephson tunnel junctions

We fabricated high quality \Nb/\Al_2\O_3/\Ni_{0.6}\Cu_{0.4}/\Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Depending on the thickness of the ferromagnetic \Ni_{0.6}\Cu_{0.4} layer and on the ambient temperature, the junctions were in the 0 or $\pi$ ground state. All junctions have homogeneous interfaces showing almost perfect Fraunhofer patterns. The \Al_2\O_3 tunnel barrier allows to achieve rather low damping, which is desired for many experiments especially in the quantum domain. The McCumber parameter $\beta_c$ increases exponentially with decreasing temperature and reaches $\beta_c\approx700$ at $T=2.1 {\rm K}$. The critical current density in the $\pi$ state was up to $5\:\rm{A/cm^2}$ at $T=2.1 {\rm K}$, resulting in a Josephson penetration depth $\lambda_J$ as low as $160\:\rm{\mu m}$. Experimentally determined junction parameters are well described by theory taking into account spin-flip scattering in the \Ni_{0.6}\Cu_{0.4} layer and different transparencies of the interfaces.Comment: Changed content and Corrected typo

Polarization states of polydomain epitaxial Pb(Zr1-xTix)O3 thin films and their dielectric properties

Ferroelectric and dielectric properties of polydomain (twinned) single-crystal Pb(Zr1-xTix)O3 thin films are described with the aid of a nonlinear thermodynamic theory, which has been developed recently for epitaxial ferroelectric films with dense laminar domain structures. For Pb(Zr1-xTix)O3 (PZT) films with compositions x = 0.9, 0.8, 0.7, 0.6, 0.5, and 0.4, the "misfit strain-temperature" phase diagrams are calculated and compared with each other. It is found that the equilibrium diagrams of PZT films with x > 0.7 are similar to the diagram of PbTiO3 films. They consist of only four different stability ranges, which correspond to the paraelectric phase, single-domain tetragonal ferroelectric phase, and two pseudo-tetragonal domain patterns. In contrast, at x = 0.4, 0.5, and 0.6, the equilibrium diagram displays a rich variety of stable polarization states, involving at least one monoclinic polydomain state. Using the developed phase diagrams, the mean out-of-plane polarization of a poled PZT film is calculated as a function of the misfit strain and composition. Theoretical results are compared with the measured remanent polarizations of PZT films grown on SrTiO3. Dependence of the out-of-plane dielectric response of PZT films on the misfit strain in the heterostructure is also reported.Comment: 23 pages, 4 figure

Far-from-equilibrium Ostwald ripening in electrostatically driven granular powders

We report the first experimental study of cluster size distributions in electrostatically driven granular submonolayers. The cluster size distribution in this far-from-equilibrium process exhibits dynamic scaling behavior characteristic of the (nearly equilibrium) Ostwald ripening, controlled by the attachment and detachment of the "gas" particles. The scaled size distribution, however, is different from the classical Wagner distribution obtained in the limit of a vanishingly small area fraction of the clusters. A much better agreement is found with the theory of Conti et al. [Phys. Rev. E 65, 046117 (2002)] which accounts for the cluster merger.Comment: 5 pages, to appear in PR

Magnetic interference patterns in 0-Pi SIFS Josephson junctions: effects of asymmetry between 0 and Pi regions

We present a detailed analysis of the dependence of the critical current I_c on the magnetic field B of 0, Pi, and 0-Pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I_c(B) of the 0 and Pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j_c(x). The maximum of I_c(B) is slightly shifted along the field axis, pointing to a small remanent in-plane magnetization of the F-layer along the field axis. I_c(B) of the 0-Pi junction exhibits the characteristic central minimum. I_c however has a finite value here, due to an asymmetry of j_c in the 0 and Pi part. In addition, this I_c(B) exhibits asymmetric maxima and bumped minima. To explain these features in detail, flux penetration being different in the 0 part and the Pi part needs to be taken into account. We discuss this asymmetry in relation to the magnetic properties of the F-layer and the fabrication technique used to produce the 0-Pi junctions

Experimental evidence of a {\phi} Josephson junction

We demonstrate experimentally the existence of Josephson junctions having a doubly degenerate ground state with an average Josephson phase \psi=\pm{\phi}. The value of {\phi} can be chosen by design in the interval 0<{\phi}<\pi. The junctions used in our experiments are fabricated as 0-{\pi} Josephson junctions of moderate normalized length with asymmetric 0 and {\pi} regions. We show that (a) these {\phi} Josephson junctions have two critical currents, corresponding to the escape of the phase {\psi} from -{\phi} and +{\phi} states; (b) the phase {\psi} can be set to a particular state by tuning an external magnetic field or (c) by using a proper bias current sweep sequence. The experimental observations are in agreement with previous theoretical predictions

Theoretical current-voltage characteristics of ferroelectric tunnel junctions

We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroelectric materials on the tunnel current is described. The calculations show that the lattice strains of piezoelectric origin modify the current-voltage relationship owing to strain-induced changes of the barrier thickness, electron effective mass, and position of the conduction-band edge. Remarkably, the conductance minimum becomes shifted from zero voltage due to the piezoelectric effect, and a strain-related resistive switching takes place after the polarization reversal in a ferroelectric barrier. Second, we analyze the influence of the internal electric field arising due to imperfect screening of polarization charges by electrons in metal electrodes. It is shown that, for asymmetric FTJs, this depolarizing-field effect also leads to a considerable change of the barrier resistance after the polarization reversal. However, the symmetry of the resulting current-voltage loop is different from that characteristic of the strain-related resistive switching. The crossover from one to another type of the hysteretic curve, which accompanies the increase of FTJ asymmetry, is described taking into account both the strain and depolarizing-field effects. It is noted that asymmetric FTJs with dissimilar top and bottom electrodes are preferable for the non-volatile memory applications because of a larger resistance on/off ratio.Comment: 14 pages, 8 figure