Investigation of Photoelectric Converters with a Base Cadmium Telluride Layer with a Decrease in Its Thickness for Tandem and Two-sided Sensitive Instrument Structures

Photovoltaic cells with a base layer of cadmium telluride with a decrease in its thickness are studied. It is known that the widespread use of photovoltaic converters is constrained by their high price in the case of highly efficient instrument structures, or low efficiency. The creation of tandem and two-sided sensitive photoelectric converters will reduce their cost while increasing their efficiency. However, to create tandem and two-sided sensitive photoelectric converters, the necessary conditions are the use of transparent contacts and a decrease in the thickness of the base layer for efficient absorption of incident radiation by the converter, which is lower. In the research process, it was found that reducing the thickness of the base layer to 1 μm allows to increase the efficiency of the photoelectric transducer during irradiation from the back. An increase in the efficiency of the photoelectric converter occurs due to a decrease in the distance from the generation region of nonequilibrium charge carriers in the region of separation. If the thickness of the base layer is less than 1 μm, then regardless of which side of the irradiation is carried out, a decrease in the efficiency of the instrument structure is observed. Increase in the efficiency of photoconverters is associated with an increase in the negative influence of recombination processes on the back contact, a decrease in the number of charge carriers generated due to incomplete absorption of incident radiation, and a decrease in the volume of the built-in field of the separating barrier when it overlaps with the depletion region of the back contact. ITO/CdS/CdTe/Cu/ITO SCs with a base layer thickness of 1 μm demonstrates degradation stability. The highest value of efficiency in the case of illumination from the front side 8.1 % and with illumination from the back side 3.8 % received after a year of operation of the photovoltaic converter

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.Comment: 22 pages, 12 figures, review pape

APPLICATION OF PLASMA FLOWS IN SOFT TISSUE INFECTION

The authors analyzed the results of treatment of 489 patients with surgical soft tissue infection at the period from 2004 to 2015. The argon and air-plasma flows in different regimes were applied in following local therapy during surgical d-bridement. The results obtained were compared with results of 280 patients who were treated using common me thod (control group). There was revealed that plasma processing of necrotic suppurative focus significantly accelerated wound cleansing and following reparation of post-necrotic wounds in 1.5-1,8 times regardless the severity and extent of covering tissue lesion. The method allowed doctors to decrease significantly the rate of microbial contamination of the focus and shorten the hospital stay. Similar trends were noted in terms of fever relief, pain syndrome and other important indices