Interference of two electrons entering a superconductor

The subgap conductivity of a normal-superconductor (NS) tunnel junction is thought to be due to tunneling of two electrons. There is a strong interference between these two electrons, originating from the spatial phase coherence in the normal metal at a mesoscopic length scale and the intrinsic coherence of the superconductor. We evaluated the interference effect on the transport through an NS junction. We propose the layouts to observe drastic Aharonov-Bohm and Josephson effects.Comment: 8 pages REVTex, [PostScript] figures upon reques

Back gating of a two-dimensional hole gas in a SiGe quantum well

A device comprising a low-resistivity, n-type, Si substrate as a back gate to a p-type (boron), remote-doped, SiGe quantum well has been fabricated and characterized. Reverse and forward voltage biasing of the gate with respect to the two-dimensional hole gas in the quantum well allows the density of holes to be varied from 8 × 1011 cm–2 down to a measurement-limited value of 4 × 1011 cm–2. This device is used to demonstrate the evolution with decreasing carrier density of a re-entrant insulator state between the integer quantum Hall effect states with filling factors 1 and 3

Conductance of a junction between a normal metal and a Berezinskii superconductor

The conductance of a junction between a normal metal and a superconductor having the symmetry proposed by Berezinskii is studied theoretically. The main feature of this symmetry is the odd frequency dependence of the anomalous Green function, which makes possible the s-wave triplet superconducting state (the Berezinskii superconductor). The Andreev reflection (which links positive and negative energies) is sensitive to the energetic symmetry; as a result, the conductance of the junction involving the Berezinskii superconductor is qualitatively different from the case of a conventional superconductor. Experimentally, the obtained results can be employed to test the possibility of the Berezinskii superconductivity proposed for Na$_x$CoO$_2$ and to identify the odd-omega component predicted for superconductor-ferromagnet junctions.Comment: 5 pages (including 3 EPS figures

Theory of Andreev reflection in a junction with a strongly disordered semiconductor

We study the conduction of a {\sl N~-~Sm~-~S} junction, where {\sl Sm} is a strongly disordered semiconductor. The differential conductance $dI/dV$ of this {\sl N~-~Sm~-~S} structure is predicted to have a sharp peak at $V=0$. Unlike the case of a weakly disordered system, this feature persists even in the absence of an additional (Schottky) barrier on the boundary. The zero-bias conductance of such a junction $G_{NS}$ is smaller only by a numerical factor than the conductance in the normal state $G_N$. Implications for experiments on gated heterostructures with superconducting leads are discussed.Comment: 4 pages, 2 figures, to appear in Rapid Communication section of Phys. Rev.

Scaling Theory of Conduction Through a Normal-Superconductor Microbridge

The length dependence is computed of the resistance of a disordered normal-metal wire attached to a superconductor. The scaling of the transmission eigenvalue distribution with length is obtained exactly in the metallic limit, by a transformation onto the isobaric flow of a two-dimensional ideal fluid. The resistance has a minimum for lengths near l/Gamma, with l the mean free path and Gamma the transmittance of the superconductor interface.Comment: 8 pages, REVTeX-3.0, 3 postscript figures appended as self-extracting archive, INLO-PUB-94031

Semiconductor High-Energy Radiation Scintillation Detector

We propose a new scintillation-type detector in which high-energy radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. The most important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Proximity effects and Andreev reflection in mesoscopic SNS junction with perfect NS interfaces

Low temperature transport measurements on superconducting film - normal metal wire - superconducting film (SNS) junctions fabricated on the basis of 6 nm thick superconducting polycrystalline PtSi films are reported. The structures with the normal metal wires of two different lengths L=1.5 $\mu$m and L=6$\mu$m and the same widths W=0.3$\mu$m are studied. Zero bias resistance dip related to pair current proximity effect is observed for all junctions whereas the subharmonic energy gap structure originating from phase coherent multiple Andreev reflections have occurs only in the SNS junctions with short wires.Comment: ReVTex, 4 pages, 4 eps figures include

Sub-gap conductance in ferromagnetic-superconducting mesoscopic structures

We study the sub-gap conductance of a ferromagnetic mesoscopic region attached to a ferromagnetic and a superconducting electrode by means of tunnel junctions. In the absence of the exchange field, the ratio $r= \gamma / \epsilon_T$ of the two tunnel junction resistances determines the behaviour of the sub-gap conductance which possesses a zero-bias peak for $r\gg 1$ and for $r\ll 1$ a peak at finite voltage. We show that the inclusion of the exchange field leads to a peak splitting for $r\ll 1$, while it shifts the zero-bias anomaly to finite voltages for $r\gg 1$.Comment: 5 pages revte

Suppression and enhancement of the critical current in multiterminal S/N/S mesoscopic structures

We analyse the measured critical current $I_{m\text{}}$ in a mesoscopic 4-terminal S/N/S structure. The current through the S/N interface is shown to consist not only of the Josephson component $I_{c}\sin \phi ,$ but also a phase-coherent part $I_{sg}\cos \phi$ of the subgap current. The current $I_{m}$ is determined by the both components $I_{c}$ and $I_{sg},$ and depends in a nonmonotonic way on the voltage $V$ between superconductors and normal reservoirs reaching a maximum at $V\cong \Delta /e$. The obtained theoretical resultas are in qualitative agreement with recent experimental data.Comment: 4 page, 3 figures. To be puplished in PRB Rapid co

Competition between electronic cooling and Andreev dissipation in a superconducting micro-cooler

We discuss very low temperature experiments on superconducting micro-coolers made of a double Normal metal - Insulator - Superconductor junction. We investigate with a high resolution the differential conductance of the micro-cooler as well as of additional probe junctions. There is an explicit crossover between the single quasi-particle current and the phase-coherent Andreev current. We establish a thermal model by considering the thermal contribution due to the Andreev current. The related increase of the electron temperature is discussed, including the influence of several parameters like the phase-coherence length or the tunnel junction transparency