Search for Sterile Neutrinos with a Radioactive Source at Daya Bay

The far site detector complex of the Daya Bay reactor experiment is proposed as a location to search for sterile neutrinos with > eV mass. Antineutrinos from a 500 kCi 144Ce-144Pr beta-decay source (DeltaQ=2.996 MeV) would be detected by four identical 20-ton antineutrino targets. The site layout allows flexible source placement; several specific source locations are discussed. In one year, the 3+1 sterile neutrino hypothesis can be tested at essentially the full suggested range of the parameters Delta m^2_{new} and sin^22theta_{new} (90% C.L.). The backgrounds from six nuclear reactors at >1.6 km distance are shown to be manageable. Advantages of performing the experiment at the Daya Bay far site are described

Recombination in polymer-fullerene bulk heterojunction solar cells

Recombination of photogenerated charge carriers in polymer bulk heterojunction (BHJ) solar cells reduces the short circuit current (Jsc) and the fill factor (FF). Identifying the mechanism of recombination is, therefore, fundamentally important for increasing the power conversion efficiency. Light intensity and temperature dependent current-voltage measurements on polymer BHJ cells made from a variety of different semiconducting polymers and fullerenes show that the recombination kinetics are voltage dependent and evolve from first order recombination at short circuit to bimolecular recombination at open circuit as a result of increasing the voltage-dependent charge carrier density in the cell. The "missing 0.3V" inferred from comparison of the band gaps of the bulk heterojunction materials and the measured open circuit voltage at room temperature results from the temperature dependence of the quasi-Fermi-levels in the polymer and fullerene domains - a conclusion based upon the fundamental statistics of Fermions.Comment: Accepted for publication in Physical Review B. http://prb.aps.org/accepted/B/6b07cO3aHe71bd1b149e1425e58bf2868cda2384d?ajax=1&height=500&width=50

Heavy Fermion Quantum Criticality

During the last few years, investigations of Rare-Earth materials have made clear that not only the heavy fermion phase in these systems provides interesting physics, but the quantum criticality where such a phase dies exhibits novel phase transition physics not fully understood. Moreover, attempts to study the critical point numerically face the infamous fermion sign problem, which limits their accuracy. Effective action techniques and Callan-Symanzik equations have been very popular in high energy physics, where they enjoy a good record of success. Yet, they have been little exploited for fermionic systems in condensed matter physics. In this work, we apply the RG effective action and Callan-Symanzik techiques to the heavy fermion problem. We write for the first time the effective action describing the low energy physics of the system. The f-fermions are replaced by a dynamical scalar field whose nonzero expected value corresponds to the heavy fermion phase. This removes the fermion sign problem, making the effective action amenable to numerical studies as the effective theory is bosonic. Renormalization group studies of the effective action can be performed to extract approximations to nonperturbative effects at the transition. By performing one-loop renormalizations, resummed via Callan-Symanzik methods, we describe the heavy fermion criticality and predict the heavy fermion critical dynamical susceptibility and critical specific heat. The specific heat coefficient exponent we obtain (0.39) is in excellent agreement with the experimental result at low temperatures (0.4).Comment: 5 pages. In the replacement, the numerical value for the specific heat coefficient exponent has been included explicitly in decimal form, and has been compared with the experimental result

Stripe phases in high-temperature superconductors

Stripe phases are predicted and observed to occur in a class of strongly-correlated materials describable as doped antiferromagnets, of which the copper-oxide superconductors are the most prominent representative. The existence of stripe correlations necessitates the development of new principles for describing charge transport, and especially superconductivity, in these materials.Comment: 5 pp, 1 color eps fig., to appear as a Perspective in Proc. Natl. Acad. Sci. US

The low-temperature energy calibration system for the CUORE bolometer array

The CUORE experiment will search for neutrinoless double beta decay (0nDBD) of 130Te using an array of 988 TeO_2 bolometers operated at 10 mK in the Laboratori Nazionali del Gran Sasso (Italy). The detector is housed in a large cryogen-free cryostat cooled by pulse tubes and a high-power dilution refrigerator. The TeO_2 bolometers measure the event energies, and a precise and reliable energy calibration is critical for the successful identification of candidate 0nDBD and background events. The detector calibration system under development is based on the insertion of 12 gamma-sources that are able to move under their own weight through a set of guide tubes that route them from deployment boxes on the 300K flange down into position in the detector region inside the cryostat. The CUORE experiment poses stringent requirements on the maximum heat load on the cryostat, material radiopurity, contamination risk and the ability to fully retract the sources during normal data taking. Together with the integration into a unique cryostat, this requires careful design and unconventional solutions. We present the design, challenges, and expected performance of this low-temperature energy calibration system.Comment: To be published in the proceedings of the 13th International Workshop on Low Temperature Detectors (LTD), Stanford, CA, July 20-24, 200

Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile

We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. We conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.Comment: 3+ pages, 2 figure

A Compact Approximate Solution to the Friedel-Anderson Impuriy Problem

An approximate groundstate of the Anderson-Friedel impurity problem is presented in a very compact form. It requires solely the optimization of two localized electron states and consists of four Slater states (Slater determinants). The resulting singlet ground state energy lies far below the Anderson mean field solution and agrees well with the numerical results by Gunnarsson and Schoenhammer, who used an extensive 1/N_{f}-expansion for a spin 1/2 impurity with double occupancy of the impurity level. PACS: 85.20.Hr, 72.15.R

Ultrafast holography and transient-absorption spectroscopy in charge-transfer polymers

Charge-transfer polymers are a new class of nonlinear optical materials which can be used for generating femtosecond holographic gratings. Using semiconducting polymers sensitized with varying concentrations of C{sub 60}, holographic gratings were recorded by individual ultrafast laser pulses; the diffraction efficiency and time decay of the gratings were measured using non-degenerate four-wave mixing. Using a figure of merit for dynamic data processing, the temporal diffraction efficiency, this new class of materials exhibits between two and 12 orders of magnitude higher response than previous reports. The charge transfer range at polymer/C{sub 60} interfaces was further studied using transient absorption spectroscopy. The fact that charge-transfer occurs in the picosecond-time scale in bilayer structures (thickness 200 {angstrom}) implies that diffusion of localized excitations to the interface is not the dominant mechanism; the charge transfer range is a significant fraction of the film thickness. From analysis of the excited state decay curves, we estimate the charge transfer range to be 80 {angstrom} and interpret that range as resulting from quantum delocalization of the photoexcitations

Status of Neutrino Masses and Mixing and Future Perspectives

Status of the problem of neutrino masses, mixing and oscillations is discussed. Future perspectives are briefly considered.Comment: Report at the conference IRGAC 2006, Barcelona July 11-15 200

Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of electric field induced changes to the frequency dependent conductivity in the accumulation or depletions layers of the active material via infrared (IR) spectroscopy. The spectra of the (Ga,Be)As-based device reveal electric field induced changes to the IR conductivity consistent with an enhancement or reduction of the Drude response in the accumulation and depletion polarities, respectively. The spectroscopic features of this device are all indicative of metallic conduction within the GaAs host valence band (VB). For the (Ga,Mn)As-based device, the spectra show enhancement of the far-IR itinerant carrier response and broad mid-IR resonance upon hole accumulation, with a decrease of these features in the depletion polarity. These later spectral features demonstrate that conduction in ferromagnetic (FM) Ga$_{1-x}$Mn$_x$As is distinct from genuine metallic behavior due to extended states in the host VB. Furthermore, these data support the notion that a Mn-induced impurity band plays a vital role in the electron dynamics of FM Ga$_{1-x}$Mn$_x$As. We add, a sum-rule analysis of the spectra of our devices suggests that the Mn or Be doping does not lead to a substantial renormalization of the GaAs host VB