Diffusion bonding of Cu atoms with molecular dynamics simulations

Diffusion bonding of copper disks is an important step during the assembly of accelerating structures -the main components of power radio-frequency linear accelerators-. During the diffusion bonding copper disks are subjected to pressure at high temperatures. Finding the optimal combination of pressure and temperature will enable an accurate design of manufacturing workflow and machining tolerances. However, required optimization is not possible without good understanding of physical processes developed in copper under pressure and high temperature. In this work, the combined effect of temperature and pressure on closing time of inter-granular voids is examined by means of molecular dynamics simulations. In particular, a nano-void of 3.5–5.5 nm in diameter representing a peak and a valley of surface roughness facing each other was inserted between identical copper grains. The simulations performed at T = 1250 K, the temperature used in experimental condition, and the 300–800 MPa pressure range indicated the dislocation-mediated enhancement of atomic diffusion leading to full void closure.Peer reviewe

Observation of ripples under different angles

The off-normal ion irradiation of semiconductor materials is seen to induce nanopatterning effects. Different theories are proposed to explain the mechanisms that drive self-reorganization of amorphisable surfaces. One of the prominent hypothesis associates formation of nanopatterning with the changes of sputtering characteristics caused by changes in surface morphology. At ultra-low energy, when sputtering is negligible, the Si surface has still been seen to re-organize forming surface ripples with the wave vector either aligned with the ion beam direction or perpendicular to it.In this work, we investigate the formation of ripples using molecular dynamics in all the three regimes of ripple formation: low angles where no ripples form, intermediate regime where the ripple wave vectors are parallel to the beam, and high angles where they are perpendicular to it. We obtain atom-level insight on how the ion-beam driven atomic dynamics at the surface contributes to organization, or lack of it, in all the different regimes. Results of our simulations agree well with experimental observations in the same range of ultra-low energy of ion irradiation

Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2

We report on the observation of nanoscale density fluctuations in 2 μm thick amorphous SiO₂ layers irradiated with 185 MeV Au ions. At high fluences, in excess of approximately 5 × 10¹² ions/cm², where the surface is completely covered by ion tracks, synchrotron small angle x-ray scattering measurements reveal the existence of a steady state of density fluctuations. In agreement with molecular dynamics simulations, this steady state is consistent with an ion track “annihilation” process, where high-density regions generated in the periphery of new tracks fill in low-density regions located at the center of existing tracks.The authors acknowledge the Australian Research Council and the Australian Synchrotron Research Program for financial support and thank the staff at the ANU Heavy Ion facility for their continued technical assistance. O.P., F.D., and K.N. acknowledge financial support from the Academy of Finland under its Centre of Excellence program as well as the OPNA project, and grants of computer capacity from CSC

Computational study of tungsten sputtering by nitrogen

Gaseous nitrogen is planned to be used as a seeding species to control the power flux in future fusion reactors with ITER-like divertors. Nitrogen interacts with the first wall materials, particularly with tungsten, leading to sputtering and changes of chemical composition of the material. We use the molecular dynamics methods with a recently developed WN potential to analyze the mechanisms leading to these modifications. We performed the simulations of cumulative nitrogen irradiation runs of tungsten surface. The sputtering yields obtained in our cumulative runs are in good agreement with experimental data. We observe the decrease of the tungsten sputtering yield with nitrogen accumulation and determine the reasons for the observed trend. The cluster analysis reveals the composition of the sputtered particles, suggesting the swift chemical sputtering process that occurs under the prolonged nitrogen irradiation of tungsten. We also observe and analyze the nitrogen saturation in the temperature range below the thermal stability limit. (C) 2020 Elsevier B.V. All rights reserved.Peer reviewe

Thermal runaway of metal nano-tips during intense electron emission

When an electron emitting tip is subjected to very high electric fields, plasma forms even under ultra high vacuum conditions. This phenomenon, known as vacuum arc, causes catastrophic surface modifications and constitutes a major limiting factor not only for modern electron sources, but also for many large-scale applications such as particle accelerators, fusion reactors etc. Although vacuum arcs have been studied thoroughly, the physical mechanisms that lead from intense electron emission to plasma ignition are still unclear. In this article, we give insights to the atomic scale processes taking place in metal nanotips under intense field emission conditions. We use multi-scale atomistic simulations that concurrently include field-induced forces, electron emission with finite-size and space-charge effects, Nottingham and Joule heating. We find that when a sufficiently high electric field is applied to the tip, the emission-generated heat partially melts it and the field-induced force elongates and sharpens it. This initiates a positive feedback thermal runaway process, which eventually causes evaporation of large fractions of the tip. The reported mechanism can explain the origin of neutral atoms necessary to initiate plasma, a missing key process required to explain the ignition of a vacuum arc. Our simulations provide a quantitative description of in the conditions leading to runaway, which shall be valuable for both field emission applications and vacuum arc studies.Peer reviewe

Direct observation of ion-induced self-organization and ripple propagation processes in atomistic simulations

Patterns on sand generated by blowing winds are one of the most commonly seen phenomena driven by such a self-organization process, as has been observed at the nanoscale after ion irradiation. The origins of this effect have been under debate for decades. Now, a new methodology allows to simulate directly the ripple formation by high-fluence ion-irradiation. Since this approach does not pre-assume a mechanism to trigger self-organization, it can provide answers to the origin of the ripple formation mechanism. The surface atom displacement and a pile-up effect are the driving force of ripple formation, analogously to the macroscopic one. IMPACT STATEMENT The presented model allows to follow the ripple formation and propagation in different steps, at the atomic level, for the first time under low irradiation energies.Peer reviewe

Insights into the primary radiation damage of silicon by a machine learning interatomic potential

We develop a silicon Gaussian approximation machine learning potential suitable for radiation effects, and use it for the first ab initio simulation of primary damage and evolution of collision cascades. The model reliability is confirmed by good reproduction of experimentally measured threshold displacement energies and sputtering yields. We find that clustering and recrystallization of radiation-induced defects, propagation pattern of cascades, and coordination defects in the heat spike phase show striking differences to the widely used analytical potentials. The results reveal that small defect clusters are predominant and show new defect structures such as a vacancy surrounded by three interstitials. Impact statement Quantum-mechanical level of accuracy in simulation of primary damage was achieved by a silicon machine learning potential. The results show quantitative and qualitative differences from the damage predicted by any previous models.Peer reviewe

Simulation of redistributive and erosive effects in a-Si under Ar+ irradiation

Abstract Ion beams are frequently used in industry for composition control of semiconducting materials as well as for surface processing and thin films deposition. Under certain conditions, low- and medium energy ions at high fluences can produce nanoripples and quantum dots on the irradiated surfaces. In the present work, we focus our attention on the study of irradiation of amorphous silicon (a-Si) target with 250 eV and 1 keV Ar+ ions under different angles, taking into special consideration angles close to the grazing incidence. We use the molecular dynamics (MD) method to investigate how much the cumulative displacement of atoms due to the simulated ion bombardment contribute to the patterning effect. The MD results are subsequently analysed using a numerical module Pycraters that allows the prediction of the rippling effect. Ripple wavelengths estimated with Pycraters are then compared with the experimental observations, as well as with the results obtained by using the binary collisions approximation (BCA) method. The wavelength estimation based on the MD results demonstrates a better agreement with the experimental values. In the framework of the utilized analytical model, it can be mainly attributed to the fact that the BCA ignores low energy atomic interactions, which, however, provide an important contribution to the displacement of atoms following an ion impact.Peer reviewe

Comparison of Molecular Dynamics and Binary Collision Approximation Simulations for Atom Displacement Analysis

Molecular dynamics (MD) and binary collision approximation (BCA) computer simulations are employed to study surface damage by single ion impacts. The predictions of BCA and MD simulations of displacement cascades in amorphous and crystalline silicon and BCC tungsten by $1 keV Ar^+$ ion bombardment are compared. Single ion impacts are studied at angles of $50^{\circ}, 60^{\circ} and 80^{\circ}$ from normal incidence. Four parameters for BCA simulations have been optimized to obtain the best agreement of the results with MD. For the conditions reported here, BCA agrees with MD simulation results at displacements larger than $5 \mathring{A}$ for amorphous Si, whereas at small displacements a difference between BCA and MD arises due to a material flow component observed in MD simulations but absent from a regular BCA approach due to the algorithm limitations. MD and BCA simulation results for crystalline W are found to be in a good agreement even at small displacements, while in crystalline Si there is some difference due to displacements in amorphous pockets.Engineering and Applied Science