Notes for genera: basal clades of Fungi (including Aphelidiomycota, Basidiobolomycota, Blastocladiomycota, Calcarisporiellomycota, Caulochytriomycota, Chytridiomycota, Entomophthoromycota, Glomeromycota, Kickxellomycota, Monoblepharomycota, Mortierellomycota, Mucoromycota, Neocallimastigomycota, Olpidiomycota, Rozellomycota and Zoopagomycota)

Compared to the higher fungi (Dikarya), taxonomic and evolutionary studies on the basal clades of fungi are fewer in number. Thus, the generic boundaries and higher ranks in the basal clades of fungi are poorly known. Recent DNA based taxonomic studies have provided reliable and accurate information. It is therefore necessary to compile all available information since basal clades genera lack updated checklists or outlines. Recently, Tedersoo et al. (MycoKeys 13:1--20, 2016) accepted Aphelidiomycota and Rozellomycota in Fungal clade. Thus, we regard both these phyla as members in Kingdom Fungi. We accept 16 phyla in basal clades viz. Aphelidiomycota, Basidiobolomycota, Blastocladiomycota, Calcarisporiellomycota, Caulochytriomycota, Chytridiomycota, Entomophthoromycota, Glomeromycota, Kickxellomycota, Monoblepharomycota, Mortierellomycota, Mucoromycota, Neocallimastigomycota, Olpidiomycota, Rozellomycota and Zoopagomycota. Thus, 611 genera in 153 families, 43 orders and 18 classes are provided with details of classification, synonyms, life modes, distribution, recent literature and genomic data. Moreover, Catenariaceae Couch is proposed to be conserved, Cladochytriales Mozl.-Standr. is emended and the family Nephridiophagaceae is introduced

Understanding quaternary compound Cu2ZnSnSe4 synthesis by microscopic scale analyses at an identical location

The synthesis of multinary compound films from layered precursors is only partially understood. Identical location microscopy resolves the multi-step synthesis of Cu2ZnSnSe4 from metallic stacks on the micron-scale. Large scale metal alloying and the seemingly illogical observation that ZnSe segregates preferentially on locations previously poor of zinc are revealed

Electrodeposition of kesterite thin films for photovoltaic applications: Quo vadis?

This paper aims at providing an updated overview of the main achievements in the development of solar cells based on Cu2ZnSn(S,Se)4 (CZTS(Se)) kesterite absorbers obtained by electrodeposition. Although undoubtedly challenging, the ultimate goal is to learn from the past works and build a solid framework for future advances in this field. What is the reason for the lower efficiency of electrodeposited CZTS(Se)-based devices (8%) compared to the world record effi ciency achieved with a hydrazine-based solution approach (12.6%)? Can this gap be filled, or there are intrinsic limitations for this achievement? The review is divided into the three main electrodeposition approaches: sequential elemental layer, alloy co-deposition, and chalcogenide co-deposition. It is argued that considerable technical challenges must be overcome for the latter approach to be successfully applied. (Graph Presented). Plot of the record power conversion efficiencies of kesterite sulfide-based solar cells obtained by electrodeposition (hollow dots), and world record efficiency of CZTS(Se)-based devices (full dots). The dashed line shows the 15% minimum efficiency threshold considered relevant for potential industrial application

Towards a photoelectrochemical tool for comprehensive quality assessment of solar cell absorber layers

Being able to predict the optoelectronic properties of thin film solar cell by analysis of the absorber layers \u2013 i.e. before a number of deposition steps are carried out \u2013 would be a clear advantage both at academic research level and for the implementation of procedures for process monitoring in industry. Recently we have demonstrated that the short circuit current density of CIGSe devices can be reasonably predicted by assessing photoelectrochemically the photocurrent density of the respective absorber layers on conductive substrates through a Eu3+ electrolyte junction. In such a junction the Eu3+ acts as a scavenger for the electrons generated on the p type semiconductor upon irradiation with photon whose energy is greater than the band-gap of the semiconductor. In presence of a redox couple with suitable standard potential with respect to the semiconductor Fermi level, the junction can also be assessed in forward bias and important information can be extracted. In this work we demonstrate that the reverse saturation current of cise solaf cell devices can be peedicteb by meeasuring ghe forward bias characteristics of the cise eu2+/3+ juncfion The aim of this work is to identify photoelectrochemical parameters for the reliable assessment of the optoelectronic properties of thin absorber films for photovoltaic applications. The ultimate goal is to develop an on-line testing tool capable of evaluating the suitability of solar cell absorbers such as Cu(In,Ga)(S,Se)2 or Cu2ZnSn(S,Se)4 before these are processed further into complete devices by addition of n-type, window and front contact layers. This would allow monitoring the stability of part of the production plant process with inherent advantages in terms of material usage, energy and time. By formation of virtually reversible electrolyte (Schottky) junctions [1] it is possible to interrogate semiconductor thin films and extract information about properties such as majority carrier type [2, 3], band-gap and flat-band potential [4], doping density [5], as well as insights on the presence of optically absorbing phases on the film surface [6]. In solid state devices the short circuit current density is related to the generation of carriers, their transport and their subsequent collection at the interface. This is also true for a Schottky junction. The parallel resistance of solar cells is associated to the presence of conducting (shorting) paths; the dark current measured in solution under reversed bias should give an estimate of such paths. The voltage of a device measured under open circuit conditions is proportional to the quasi-Fermi level splitting within the absorber. The consequence of this statement applies also to the semiconductor/electrolyte case [7]. In this work we investigate if a sound correlation between the solid state device properties (short circuit current, parallel resistance and open circuit voltage) and the corresponding parameters accessible through a transparent electrolyte junction can be established. To this end three Cu(In,Ga)Se2 absorber layers obtained by physical vapour deposition were split into two. Half were completed into solar cell devices and the other half were tested photoelectrochemically. The chosen absorber layers gave solid state device power conversion efficiencies of 6, 9 and 12.5% [8]. The photoelectrochemical experiments were performed with a three electrode setup in an equimolar solution of Eu3+/2+ and consisted of chronoamperometric and voltammetric analyses under pulsed illumination, as well as photocurrent spectroscopy. The theoretical correlations are complicated by experimental issues including the non-ideality of surface structures and of the current collection [9]. In fact, in agreement with the literature [5, 10, 11], our work shows that photoelectrochemical assessments can also be performed in the absence of active electrolyte redox species. Nevertheless, we highlight their importance if reversibility and longtime reproducibility of the measurements are a strict requirement. References [1] L.M. Peter, Semiconductor Electrochemistry, in: J.M. Feliu-Martinez, V.C. Paya (Eds.) Electrochemistry, Encyclopedia of Life Support Systems, Oxford, 2010. [2] P. Dale, A. Samantilleke, G. Zoppi, I. Forbes, S. Roncallo, L. Peter, Deposition and Characterization of Copper Chalcopyrite Based Solar Cells using Electrochemical Techniques, Electrochemical Society Transactions, 6 (2007) 535-546. [3] J. Kessler, D. Schmid, R. Schaffler, H.W. Schock, S. Menezes, Electro-optical and photoelectrochemical studies of CuIn3Se5 chalcopyrite films, in: Photovoltaic Specialists Conference (PVSC), 1993 23rd IEEE, 1993, pp. 549 - 554. [4] J.J. Scragg, P.J. Dale, L.M. Peter, Towards sustainable materials for solar energy conversion: Preparation and photoelectrochemical characterization of Cu2ZnSnS4, Electrochemistry Communications, 10 (2008) 639-642. [5] D. Lincot, H. Gomez Meier, J. Kessler, J. Vedel, B. Dimmler, H.W. Schock, Photoelectrochemical study of p-type copper indium diselenide thin films for photovoltaic applications, Solar Energy Materials, 20 (1990) 67-79. [6] D. Colombara, L.M. Peter, K. Hutchings, K.D. Rogers, S. Sch\ue4fer, J.T.R. Dufton, M.S. Islam, Formation of Cu3BiS3 thin films via sulfurization of Bi\u2013Cu metal precursors, Thin Solid Films, 520 (2012) 5165-5171. [7] R. Memming, Semiconductor Electrochemistry, Wiley, 2001. [8] V. Depredurand, Y. Aida, J. Larsen, T. Eisenbarth, A. Majerus, S. Siebentritt, Surface treatment of CIS solar cells grown under Cu-excess, in: Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, 2011, pp. 000337-000342. [9] H. Gerischer, The role of semiconductor structure and surface properties in photoelectrochemical processes, Journal of Electroanalytical Chemistry and Interfacial Electrochemistry, 150 (1983) 553-569. [10] C. Guillen, J. Herrero, D. Lincot, Photovoltaic activity of electrodeposited p-CuInSe2/electrolyte junction, Journal of Applied Physics, 76 (1994) 359-362. [11] O. Solorza-Feria, R. Rivera-Noriega, Photoelectrochemical response and characterization of p-CuInSe2 electrodeposited with different citrate ion concentrations, Journal of Materials Science, 30 (1995) 2616-2619. Acknowledgements LPV, LEM and Nexcis team members are gratefully acknowledged for help and discussion. Prof. Laurence M. Peter is thanked for initiating the authors\u2019 interest in Photoelectrochemistry. The research leading to these results has received funding from the European Union\u2019s Seventh Framework Programme FP7/2007-2013 under grant agreement n\uba 28448

Développement d’une méthode d’identification des champignons mycorhiziens à arbuscules par spectrométrie de masse. (MALDI- TOF-MS)

International audienc

Study of Kesterite phase formation by selenization of electrodeposited Cu-Sn-Zn thin films

The process of electrodeposition of stacked metal layers followed by chalcogenization to form Cu(In,Ga)(S,Se)2 (CIGSSe) absorbers for photovoltaics is emerging as an attractive industrial process, with reported solar cell power conversion efficiencies as high as 16% [1]. Similarly, the synthesis of Cu2ZnSn(S,Se)4 (CZTSSe) is currently being investigated using electrodeposition of Cu/Sn/Zn metallic stacks and selenization/sulfurization. This process already reached efficiencies up to 7.3% (total cell area) [2] and 8.0 % (active area) [3]. The detrimental effects of secondary phases in the CZTSe system on device performance are known in the literature [4]. For example, the presence of ZnSe secondary phase at the interface between CZTSe and CdS has been related to a current blocking phenomenon [5]. Our group has demonstrated that this phenomenon is directly related to a reduction of the device short circuit current [6]. In this work, compositional optimizations aimed at reducing the amount of ZnSe secondary phase have allowed the achievement of a 6% efficiency (total area) solar cell. However, in order to improve the solar cell device performance even further, it is crucial to better understand when and where the Kesterite and the secondary phases appear in the films during annealing. By understanding the phase formation, routes may be designed to maximize kesterite formation, and to minimize secondary phase formation. To this end, an investigation of the mechanism and kinetics of Kesterite phase formation was realized. This is based on the phase evolution monitoring of part of the time/temperature field, established by ex-situ analysis of the films after annealing in the presence of Se and SnSe powders. A rapid thermal processing (RTP) furnace is employed for the study, thus allowing fast ramps of heating (11\ub0C/s) and cooling (0.45\ub0C/s). The film in-depth and surface phase composition was assessed by Secondary ion mass spectrometry (SIMS) depth profile, X-ray diffraction (XRD), Energy dispersive X-ray spectroscopy (EDX) and Raman spectroscopy. Two types of precursors were employed with and without a selenium surface layer deposited by chemical bath deposition, in order to gain better insights into the role of the selenium location on the phase evolution. After just 30 s at 550\ub0C the film obtained by processing the Se-free precursor is composed of ZnSe, CuxSe and CZTSe. EDX analysis shows a strong loss of Sn after 30s annealing, which explains the presence of secondary phases, followed by an increase of Sn for longer annealing times. This phenomenon can be explained by the loss of SnSe at early annealing stages, and then reincorporation of Sn coming from SnSe powder to form CZTSe [7]: although SnSe solid is added to the annealing chamber, a certain time is required before enough partial pressure of SnSe is established. In order to observe the first steps of Kesterite formation, the phase evolution was monitored at lower processing time (400 \ub0C). The results show that even at 400 \ub0C the Kesterite formation is relatively fast. After 1s, Kesterite is present at the surface together with ZnSe, while the rest of the layer is still composed of alloys of Cu, Sn, Zn. The precursor film containing the selenium surface layer displays a meaningful increase of the Kesterite formation rate. Consequently, using precursors with a selenium cap reduces the thermal annealing budget. This work allows a better understanding of the mechanism and kinetics of formation of Kesterite and secondary phases, which is essential to optimize the annealing process and decrease as much as possible the presence of secondary phases in the final Kesterite absorber films. Acknowledgements: The research leading to these results has received funding from the European Union\u2019s Seventh Framework Programme FP7/2007-2013 under grant agreement n\uba 284486. [1] Bermudez, V. in 5th International Workshop on CIGS Solar Cell Technology. 2014. Berlin. [2] Ahmed, S., et al., Advanced Energy Materials, 2011. 2(2): p. 253-259. [3] Jiang, F., et al., Advanced Energy Materials, 4 (2013) p. n/a-n/a. [4] S. Siebentritt, Thin Solid Films, 535 (2013) 1-4. [5] J.T. W\ue4tjen, et al., Applied Physics Letters, 100 (2012) 173510-173511 173510-173513. [6] D. Colombara, et al., Solar Energy Materials and Solar Cells, 123 (2014) 220-227. [7] A. Redinger, et al., Journal of the American Chemical Society, 133 (2011) 3320-3323

Co-inoculation with a bacterium and arbuscular mycorrhizal fungi improves root colonization, plant mineral nutrition, and plant growth of a Cyperaceae plant in an ultramafic soil

The ecological restoration of nickel mining-degraded areas in New Caledonia is strongly limited by low availability of soil mineral nutrients, metal toxicity, and slow growth rates of native plant species. In order to improve plant growth for restoration programs, special attention was paid to interactions between plant and soil microorganisms. In this study, we evaluated the influence of inoculation with Curtobacterium citreum BE isolated from a New Caledonian ultramafic soil on arbuscular mycorrhizal symbiosis and growth of Tetraria comosa, an endemic sedge used in restoration programs. A greenhouse experiment on ultramafic substrate was conducted with an inoculum comprising two arbuscular mycorrhizal fungi (AMF) species isolated from New Caledonian ultramafic soils: Rhizophagus neocaledonicus and Claroideoglomus etunicatum. The effects on plant growth of the AMF and C. citreum BE inoculated separately were not significant, but their co-inoculation significantly enhanced the dry weight of T. comosa compared with the non-inoculated control. These differences were positively correlated with mycorrhizal colonization which was improved by C. citreum BE. Compared with the control, co-inoculated plants were characterized by better mineral nutrition, a higher Ca/Mg ratio, and lower metal translocation. However, for Ca/Mg ratio and metal translocation, there were no significant differences between the effects of AMF inoculation and co-inoculation