Divacancy-induced Ferromagnetism in Graphene Nanoribbons

Zigzag graphene nanoribb ons have spin-polarized edges, anti-ferromagnetically coupled in the ground state with total spin zero. Customarily, these ribbons are made ferromagnetic by producing an imbalance between the two sublattices. Here we show that zigzag ribbons can be ferromagnetic due to the presence of reconstructed divacancies near one edge. This effect takes place despite the divacancies are produced by removing two atoms from opposite sublattices, being balanced before reconstruction to 5-8-5 defects. We demonstrate that there is a strong interaction between the defect-localized and edge bands which mix and split away from the Fermi level. This splitting is asymmetric, yielding a net edge spin-polarization. Therefore, the formation of reconstructed divacancies close to the edges of the nanoribbons can be a practical way to make them partially ferromagnetic

Optical spin control in nanocrystalline magnetic nanoswitches

We investigate the optical properties of (Cd,Mn)Te quantum dots (QDs) by looking at the excitons as a function of the Mn impurities positions and their magnetic alignments. When doped with two Mn impurities, the Mn spins, aligned initially antiparallel in the ground state, have lower energy in the parallel configuration for the optically active spin-up exciton. Hence, the photoexcitation of the QD ground state with antiparallel Mn spins induces one of them to flip and they align parallel. This suggests that (Cd,Mn)Te QDs are suitable for spin-based operations handled by light

Ab initio calculations of structures and stabilities of (NaI)_nNa+ and (CsI)_nCs+ cluster ions

Ab initio calculations using the Perturbed Ion model, with correlation contributions included, are presented for nonstoichiometric (NaI)_nNa+ and (CsI)_nCs+ (n=1-14) cluster ions. The ground state and several low-lying isomers are identified and described. Rocksalt ground states are common and appear at cluster sizes lower than in the corresponding neutral systems. The most salient features of the measured mobilities seem to be explained by arguments related to the changes of the compactness of the clusters as a function of size. The stability of the cluster ions against evaporation of a single alkali halide molecule shows variations that explain the enhanced stabilities found experimentally for cluster sizes n=4, 6, 9, and 13. Finally, the ionization energies and the orbital eigenvalue spectrum of two (NaI)_13Na+ isomers are calculated and shown to be a fingerprint of the structure.Comment: 8 pages plus 13 postscript figures, LaTeX. Accepted for publication in Phys, Rev. B; minor changes including a more complete comparison to pair potential result

First-principles calculations of the magnetic properties of (Cd,Mn)Te nanocrystals

We investigate the electronic and magnetic properties of Mn-doped CdTe nanocrystals (NCs) with 2 nm in diameter which can be experimentally synthesized with Mn atoms inside. Using the density-functional theory, we consider two doping cases: NCs containing one or two Mn impurities. Although the Mn d peaks carry five up electrons in the dot, the local magnetic moment on the Mn site is 4.65 mu_B. It is smaller than 5 mu_B because of the sp-d hybridization between the localized 3d electrons of the Mn atoms and the s- and p-type valence states of the host compound. The sp-d hybridization induces small magnetic moments on the Mnnearest- neighbor Te sites, antiparallel to the Mn moment affecting the p-type valence states of the undoped dot, as usual for a kinetic-mediated exchange magnetic coupling. Furthermore, we calculate the parameters standing for the sp-d exchange interactions. Conduction N0\alpha and valence N0\beta are close to the experimental bulk values when the Mn impurities occupy bulklike NCs' central positions, and they tend to zero close to the surface. This behavior is further explained by an analysis of valence-band-edge states showing that symmetry breaking splits the states and in consequence reduces the exchange. For two Mn atoms in several positions, the valence edge states show a further departure from an interpretation based in a perturbative treatment. We also calculate the d-d exchange interactions |Jdd| between Mn spins. The largest |Jdd| value is also for Mn atoms on bulklike central sites; in comparison with the experimental d-d exchange constant in bulk Cd0.95Mn0.05Te, it is four times smaller

Antiferromagnetic order in (Ga,Mn)N nanocrystals: A density functional theory study

We investigate the electronic and magnetic properties of (Ga,Mn)N nanocrystals using the density functional theory. We study both wurtzite and zinc-blende structures doped with one or two substitutional Mn impurities. For a single Mn dopant placed close to surface, the behavior of the empty Mn-induced state, hereafter referred to as "Mn hole", is different from bulk (Ga,Mn)N. The energy level corresponding to this off-center Mn hole lies within the nanocrystal gap near the conduction edge. For two Mn dopants, the most stable magnetic configuration is antiferromagnetic, and this was unexpected since (Ga,Mn)N bulk shows ferromagnetism in the ground state. The surprising antiferromagnetic alignment of two Mn spins is ascribed also to the holes linked to the Mn impurities located close to surface. Unlike Mn holes in (Ga,Mn)N bulk, these Mn holes in confined (Ga,Mn)N nanostructures do not contribute to the ferromagnetic alignment of the two Mn spins

Topologically confined states at corrugations of gated bilayer graphene

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear at the corrugation, which reveal as robust transport channels along the stacking boundary. With increasing size of the corrugation, more localized, quantum-well-like states emerge. These finite-size states are also conductive along the fold, but in contrast to the stacking boundary states, which are gapless, they present a gap. We have also studied periodic corrugations in bilayer graphene; our findings show that such corrugations between AB- and BA-stacked regions behave as conducting channels that can be easily identified by their shape

Electron Confinement Induced by Diluted Hydrogen-like Ad-atoms in Graphene Ribbons

We report the electronic properties of two-dimensional systems made of graphene nanoribbons which are patterned with ad-atoms in two separated regions. Due to the extra electronic confinement induced by the presence of the impurities, we find resonant levels, quasi-bound and impurity-induced localized states, which determine the transport properties of the system. Regardless of the ad-atom distribution in the system, we apply band-folding procedures to simple models and predict the energies and the spatial distribution of those impurity-induced states. We take into account two different scenarios: gapped graphene and the presence of randomly distributed ad-atoms in a low dilution regime. In both cases the defect-induced resonances are still detected. Our findings would encourage experimentalist to synthesize these systems and characterize their quasi-localized states employing, for instance, scanning tunneling spectroscopy (STS). Additionally, the resonant transport features could be used in electronic applications and molecular sensor devices.Comment: 12 pages, 11 figures, submitted (minor changes

Magnetism of Substitutional Co Impurities in Graphene: Realization of Single π\pi-Vacancies

We report {\it ab initio} calculations of the structural, electronic and magnetic properties of a graphene monolayer substitutionally doped with Co (Co$_{sub}$) atoms. We focus in Co because among traditional ferromagnetic elements (Fe, Co and Ni), only Co$_{sub}$ atoms induce spin-polarization in graphene. Our results show the complex magnetism of Co substitutional impurites in graphene, which is mapped into simple models such as the $\pi$-vacancy and Heisenberg model. The links established in our work can be used to bring into contact the engineering of nanostructures with the results of $\pi$-models in defective graphene. In principle, the structures considered here can be fabricated using electron irradiation or Ar$^+$ ion bombardment to create defects and depositing Co at the same time