Quantum magnetoresistance of Weyl semimetals with strong Coulomb disorder

We study the effects a strong Coulomb disorder on the transverse magnetoresistance in Weyl semimetals at low temperatures. Using the diagrammatic technique and the Keldysh model to sum up the leading terms in the diagrammatic expansion, we find that the linear magnetoresistance exhibits a strong renormalization due to the long-range nature of the Coulomb interaction $\rho_{xx} \propto H\ln(eH\hbar v^2/cT^2_{\rm imp}),\ \ \Omega\alpha^{-1/6}\ll T_{\rm imp}\ll \Omega/\alpha^{-3/4}$, where $\Omega = v\sqrt{2eH\hbar/c}$ is the distance between the zeroth and the first Landau levels, $T_{\rm imp}=\hbar vn^{1/3}_{\rm imp}$ measures the strength of the impurity potential in terms of the impurity concentration $n$ and the Fermi velocity $v$, and $\alpha = e^2/\hbar v$ is the effective fine structure constant of the material. As disorder becomes even stronger (but still in the parametric range, where the Coulomb interaction can be treated as a long-range one), we find that the magnetoresistivity becomes quadratic in the magnetic field $\rho_{xx}\propto H^2$

Effects of anisotropy on the high field magnetoresistance of Weyl semimetals

We study the effects of anisotropy on the magnetoresistance of Weyl semimetals (WSMs) in the ultraquantum regime. We utilize the fact that many Weyl semimetals are approximately axially anisotropic. We find that anisotropy manifests itself in the strong dependence of the magnetoresistance on the polar and azimuthal angles determining the orientation of the anisotropy axis with respect to the applied magnetic field and electric current. We also predict that the ratio of magnetoresistances in the geometries, where the magnetic field and anisotropy axes are aligned and where they are orthogonal, scales as $(v_\bot/v_\parallel)^2$ where $v_\bot$ and $v_\parallel$ are the corresponding Fermi velocities

Pecularities of Hall effect in GaAs/{\delta}<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

Transport properties of GaAs/{\delta}/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence Rxx(T) at the temperature {\approx} 46K which is usually associated with the Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in QW does not decrease below TC as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than ds is smaller and reaches a giant value pH = (1-2)\cdot10^13 cm^(-2). Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high pH value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component.Comment: 19 pages, 6 figure

Charge inhomogeneities and transport in semiconductor heterostructures with a manganese δ\delta-layer

We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $\delta$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed in both metallic and insulating structures can be interpreted as a signature of significant ferromagnetic correlations. The insulating samples turn out to be the most interesting as they can give us valuable insights into the mechanisms of ferromagnetism in these heterostructures. At low charge carrier densities, we show how the interplay of disorder and nonlinear screening can result in the organization of the carriers in the 2D transport channel into charge droplets separated by insulating barriers. Based on such a droplet picture and including the effect of magnetic correlations, we analyze the transport properties of this set of droplets, compare it with experimental data, and find a good agreement between the model calculations and experiment. Our analysis shows that the peak or shoulder-like features observed in temperature dependence of resistance of 2D heterostructures $\delta$-doped by Mn lie significantly below the Curie temperature $T_{C}$ unlike the three-dimensional case, where it lies above and close to $T_{C}$. We also discuss the consequences of our description for understanding the mechanisms of ferromagnetism in the heterostructures under study.Comment: 13 pages, 12 figures, RevTe

Quantum Size Effect transition in percolating nanocomposite films

We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster (IC). At low temperature, mesoscopic effects revealed on the conductivity, Hall effect experiments and low frequency electrical noise (random telegraph noise and 1/f noise) strongly support the existence of a temperature-induced Quantum Size Effect (QSE) transition in the metallic conduction path. Below a critical temperature related to the geometrical constriction sizes of the IC, the electronic conductivity is mainly governed by active tunnel conductance across barriers in the metallic network. The high 1/f noise level and the random telegraph noise are consistently explained by random potential modulation of the barriers transmittance due to local Coulomb charges. Our results provide evidence that a lowering of the temperature is somehow equivalent to a decrease of the metal fraction in the vicinity of the percolation limit.Comment: 21 pages, 8 figure

Magnetoresistance and Anomalous Hall Effect of InSb Doped with Mn

Transport properties of polycrystalline (In, Mn)Sb samples are investigated. Behavior of the temperature and magnetic field dependencies of the resistivity, anomalous Hall coefficient and magnetoresistivity at low temperatures points out the influence of Mn complexes, Mn ions and nano- and microsizes MnSb precipitates on charge transport. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3361