3 research outputs found

    Electrosynthesis of p-aminobenzenearsenic Acid

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    研究优化电解还原对硝基苯胂酸(p-A)合成对氨基苯胂酸(p-ASA)的工艺条件.实验表明:硫酸浓度、添加剂量、反应温度、投料量等工艺参数对合成产率有显著影响.初步得出比较适宜的电解合成条件为:硫酸浓度10%(bymass,下同)、添加剂量1%(bymass)NaCl、反应温度80℃、投料量71.4g/L、电流密度10A·dm-2.在上述工艺条件下,电解合成产率可达65.8%.The electrochemical reduction of p-nitrophenyl arsonit acid to p-aminobenzenearsenic acid was studied using controlled-current electrolysis.The results showed that the yield of p-aminobenzenearsenic acid was determinated by the following factors:the concentrations of sulphuric acid,the amount of additive,temperature and the concentrations of p-nitrophenyl arsenic acid.The optimum electrolytic conditions were obtained to be is 10% H2SO4,1% NaCl,80 ℃,25 g/350 mL p-nitrophenyl arsenic acid and 10 A·dm-2.The yield of arsanilic acid could be reached 64.7% under the optimum electrolytic conditions.作者联系地址:浙江工业大学绿色合成技术国家重点实验室培育基地;杭州利群环保纸业有限公司;Author's Address: 1.State Key Laboratory Breeding Base of Green Chemisitry Synthesis Technology,Zhejiang University of Technology,Hangzhou 310032,China;2.Hangzhou Liqun Environmental Paper Company,Hangzhou 310018,Chin

    利用非极性ZnO缓冲层生长非极性InN薄膜的方法

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    本发明公开了一种利用非极性ZnO缓冲层生长非极性InN薄膜的方法,包括:步骤1:取一衬底;步骤2:采用MOCVD法生长非极性A面ZnO缓冲层;步骤3:采用MOCVD方法,通入铟源和氮源,在该非极性A面ZnO缓冲层上生长非极性A面InN薄膜;步骤4:关闭铟源,并在反应室温度降到300摄氏度以下关闭氮源,完成A面非极性InN薄膜的生长。本发明利用A面ZnO作为缓冲层以降低外延失配度,可以获得高质量的非极性A面InN薄膜,该方法可应用于高速微电子器件、发光二极管和太阳能电池中
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