The Study on Multiple Quantum Well of TensileStrained InGaAs/InP Grown by LP-MOCVD

首先从理论上研究了在应变情况下量子阱中能级的计算，然后利用lP-MOCVd研究了IngAAS/InP组份的控制及生长条件，最后生长伸张应变为0.5%的四个量子阱IngAAS/InP结构材料，利用Pl光谱测量得最小阶宽为1.8nM。The energy levels of quantum well (QW) under diFFerential strain have been calculated,the composition and growth rate of InGaAs matched with InP have been studied by Low Pressure Metallorganic Chemical Vapour Deposition (LP-MOCVD).Four-QW InGaAs/InP with 0.5% tensile strain has been grown.The narrowest well width is 1.8 nm by PL spectroscopy measurement

InGaAs/InP STRAINED QUANTUM WELL LD BY LP-MOCVD

本文指出在lP—MOCVd生长过程中，采用量子阱有源区和上限制层不同的生长温度以及生长非掺杂过渡层等技术能有效地控制IngAAS/InP量子阱激光器的P—n结结位，给出了采用dEzn和H＿2S做掺杂源在InP材料中P型和n型杂质溶度和P-n结控制的条件，并研制出有源区阱层IngAAS与InP存在0.5%压缩应变量子阱激光器，这一结构ld实现室温脉冲激射，得到峰值功率为106MW以上，阈值电流密度为2.6kA/CM2。The using of diFFerential growth temperature of InGaAs/InPQuantum Well(QW)area andInP upper conFining layer,and growth of unintentionally doped InP layer were proposed to controlp-n junction position by Low-Pressure Metal Organic Chemical Vapor Deposition(LP-MOCVD).Thep-type and n-type doping source were DEZn and H2S.InGaAs/InP three strained layer QW's LD wasFabricated.The LD was pulsed lased at room temperature.The pulsed output peak power is greaterthan 106mW,and the pulsed threshold current density is 2.6kA/cm2

适于InGaAsP光放大器偏振不灵敏的增益介质

研制了适于InGaAsP光放大器偏振不灵敏的增益介质，采用有源区内交替的张应变和压应变排列的混合应变量子阱结构，器件做成带有倾角的扇形。实验中发现该结构既抑制了激射又改善了器件的偏振灵敏性，实现了偏振灵敏度小于0.5 dB，100 mA偏置时可达0.1 dB。在较大的电流范围内，峰的半高全宽（FWHM）为40 nm

InGaAs/InP PIN photodiodes fabricated by LP-MOCVD

【中文摘要】 采用ＬＰ－ＭＯＣＶＤ制作了ＩｎＧａＡｓ／ＩｎＰ平面型ＰＩＮ光电二极管。器件光敏面直径为７５μｍ，采用Ｚｎ扩散形成ＰＮ结，－６Ｖ偏置下其暗电流低达８～１３ｎＡ；反向击穿电压为６０Ｖ（１μＡ）。在没有增透膜时，对１．３μｍ注入光响应度为０．５６Ａ／Ｗ，光谱响应范围为０．９０～１．７０μｍ。 【英文摘要】 Planar In/InGaAs/InP heterostructure photodiodes are fabricated using LP-MOCVD.The 75 μm diameter device with a PN junction formed by Zn diffusion shows low dark current of 8￣13 nA at bias voltage of -6V.The breakdown voltage is 60 V(1 μA) and the range of spectral response is λ=0. 90￣1.70μm and photodiode response is 0.56 A/W at the 1.3 μm wavelength.福建省自然科学基

InGaAs/InP PIN photodiodes Fabricated by LP-MOCVD

采用lP-MOCVd制作了IngAAS/InP平面型PIn光电二极管。器件光敏面直径为75μM，采用zn扩散形成Pn结，-6V偏置下其暗电流低达8~13nA；反向击穿电压为60V（1μA）。在没有增透膜时，对1.3μM注入光响应度为0.56A/W，光谱响应范围为0.90~1.70μM。Planar In/InGaAs/InP heterostructure photodiodes are Fabricated using LP-MOCVD.The 75 μm diameter device with a PN junction Formed by Zn diFFusion shows low dark current of 8￣13 nA at bias voltage of -6V.The breakdown voltage is 60 V(1 μA) and the range of spectral response is λ=0.90￣1.70μm and photodiode response is 0.56 A/W at the 1.3 μm wavelength.福建省自然科学基