采用lP-MOCVd制作了IngAAS/InP平面型PIn光电二极管。器件光敏面直径为75μM，采用zn扩散形成Pn结，-6V偏置下其暗电流低达8~13nA；反向击穿电压为60V（1μA）。在没有增透膜时，对1.3μM注入光响应度为0.56A/W，光谱响应范围为0.90~1.70μM。Planar In/InGaAs/InP heterostructure photodiodes are Fabricated using LP-MOCVD.The 75 μm diameter device with a PN junction Formed by Zn diFFusion shows low dark current of 8￣13 nA at bias voltage of -6V.The breakdown voltage is 60 V(1 μA) and the range of spectral response is λ=0.90￣1.70μm and photodiode response is 0.56 A/W at the 1.3 μm wavelength.福建省自然科学基
