【中文摘要】 采用ＬＰ－ＭＯＣＶＤ制作了ＩｎＧａＡｓ／ＩｎＰ平面型ＰＩＮ光电二极管。器件光敏面直径为７５μｍ，采用Ｚｎ扩散形成ＰＮ结，－６Ｖ偏置下其暗电流低达８～１３ｎＡ；反向击穿电压为６０Ｖ（１μＡ）。在没有增透膜时，对１．３μｍ注入光响应度为０．５６Ａ／Ｗ，光谱响应范围为０．９０～１．７０μｍ。
【英文摘要】 Planar In/InGaAs/InP heterostructure photodiodes are fabricated using LP-MOCVD.The 75 μm diameter device with a PN junction formed by Zn diffusion shows low dark current of 8￣13 nA at bias voltage of -6V.The breakdown voltage is 60 V(1 μA) and the range of spectral response is λ=0. 90￣1.70μm and photodiode response is 0.56 A/W at the 1.3 μm wavelength.福建省自然科学基
