Research on Simulation System of 3D Orchid Flower Blossoming Process

我国的国花——兰花类属繁多,形态各异,目前尚未有人对其进行花开仿真研究。通过研究兰花植物学知识,以几种不同形态特征的兰花为虚拟建模对象,分析其器官形态特点,提出基于器官模型库的带随机值参数变换算法,建立器官模型库,并通过适当的变换,得到形态各异的兰花器官,根据兰花生长规律,采用不同的分段参数控制各器官生长,通过项目实践,证明了此方法能逼真地模拟兰花动态生长。同时加入了良好的交互功能,使用户能体验兰花的不同形态及在不同场景中摆放的效果。系统对7种兰花进行了模拟,在展会中通过该系统,销售额增加了10%。As the national flower of China, orchid has various kinds of types and shapes, and its bloom process has never been simulated before.A model library of orchid organs was established and a transformation algorithm with random-valued parameters was proposed based on the model library of orchid organs by studying botanical knowledge of orchids and taking orchids with different morphological characteristics as research subjects for virtual modeling.Different segmental transformations were respectively performed on each organ of orchids to simulate growth of the organs according to the growth law of orchids.Different examples for simulating different type of orchids were provided to illustrate the realistic of dynamic growth of orchid by using the transformation algorithm.Meanwhile, the positive user interactive function of the simulation system enabled users to experience different orchids in different scenarios.Seven species of orchids were simulated in the system, and sales volume of orchids increased by 10% at the exhibition by using the system.福建省中青年教师教育科研项目(JB14210); 福建省科技重大专项(2013HZ0004-1

人工汇集雨水利用技术研究

该项目属节水农业领域，是国家“九•五”科技攻关项目。项目总结提出了雨水就地利用、叠加利用与异地利用的三种基本方式，提出了雨水资源化理论潜力、可实现潜力和现实潜力的新概念，引入降雨径流调控参数，构建出上述三种利用方式不同潜力的计算模型，建立了小流域雨水资源利用评价方法，为进一步大规模开发雨水资源提供了科学依据。实践上，主要解决了人工集流场规划设计方法、新型集雨材料，以及雨水补充灌溉技术实施方法等关键技术。试验结果表明：试验区集流效率、作物产量大幅度提高。既消除了水土流失冲刷动力，又提高了雨水资源利用效率，达到了同步实现防止水土流失与实现旱区农业主动抗旱的双重目标。形成了以雨水资源高效汇集技术、存储与净化技术、高效利用技术为核心的人工汇集雨水利用技术体系与发展模式技术成果。该技术已在甘肃定西、陕西、山西等地推广。上述技术研究成果已收录于雨水集蓄利用工程技术规范作为行业技术标准颁布实施（SL267—2001）

InGaAs/InP PIN photodiodes fabricated by LP-MOCVD

【中文摘要】 采用ＬＰ－ＭＯＣＶＤ制作了ＩｎＧａＡｓ／ＩｎＰ平面型ＰＩＮ光电二极管。器件光敏面直径为７５μｍ，采用Ｚｎ扩散形成ＰＮ结，－６Ｖ偏置下其暗电流低达８～１３ｎＡ；反向击穿电压为６０Ｖ（１μＡ）。在没有增透膜时，对１．３μｍ注入光响应度为０．５６Ａ／Ｗ，光谱响应范围为０．９０～１．７０μｍ。 【英文摘要】 Planar In/InGaAs/InP heterostructure photodiodes are fabricated using LP-MOCVD.The 75 μm diameter device with a PN junction formed by Zn diffusion shows low dark current of 8￣13 nA at bias voltage of -6V.The breakdown voltage is 60 V(1 μA) and the range of spectral response is λ=0. 90￣1.70μm and photodiode response is 0.56 A/W at the 1.3 μm wavelength.福建省自然科学基

InGaAs/InP PIN photodiodes Fabricated by LP-MOCVD

采用lP-MOCVd制作了IngAAS/InP平面型PIn光电二极管。器件光敏面直径为75μM，采用zn扩散形成Pn结，-6V偏置下其暗电流低达8~13nA；反向击穿电压为60V（1μA）。在没有增透膜时，对1.3μM注入光响应度为0.56A/W，光谱响应范围为0.90~1.70μM。Planar In/InGaAs/InP heterostructure photodiodes are Fabricated using LP-MOCVD.The 75 μm diameter device with a PN junction Formed by Zn diFFusion shows low dark current of 8￣13 nA at bias voltage of -6V.The breakdown voltage is 60 V(1 μA) and the range of spectral response is λ=0.90￣1.70μm and photodiode response is 0.56 A/W at the 1.3 μm wavelength.福建省自然科学基