In situ Laser Raman Spectroscopic Study on the Etching Processes of the Silicon

硅是应用最广泛研究最系统和深入的半导体材料，人们一直进行着不懈的 努力，以便从更深层次上认识硅的性质，进一步发掘其应用的潜力从而得到性 能更好的硅基微光电子器件和微电机械系统.由于硅表面的键合形式如Si: O，Si:H，Si:F)明显影响甚至决定了硅的一系列物理和化学性质以及随后对它 的加工工艺，因此，对硅表面结构和刻蚀过程的正确表征以及有选择性地控制表 面的键合形式成了认识硅和加工硅的关键.谱学技术(如IR，EELS，Raman光谱) 具有表征具体分子的能力，是研究半导体表面的重要手段，但由于硅刻蚀加工的 条件苛刻，例如需要腐蚀性强的溶液，这给应用谱学技术进行现场研究带来了很 ...学位：理学硕士院系专业：化学化工学院_物理化学(含化学物理)学号：19952501

激光拉曼光谱技术现场研究硅的刻蚀

硅是应用最广泛研究最系统和深入的半导体材料,人们一直进行着不懈的 努力,以便从更深层次上认识硅的性质,进一步发掘其应用的潜力从而得到性 能更好的硅基微光电子器件和微电机械系统.由于硅表面的键合形式如Si: O,Si:H,Si:F)明显影响甚至决定了硅的一系列物理和化学性质以及随后对它 的加工工艺,因此,对硅表面结构和刻蚀过程的正确表征以及有选择性地控制表 面的键合形式成了认识硅和加工硅的关键.谱学技术(如IR,EELS,Raman光谱) 具有表征具体分子的能力,是研究半导体表面的重要手段,但由于硅刻蚀加工的 条件苛刻,例如需要腐蚀性强的溶液,这给应用谱学技术进行现场研究带来了很 ...学位：理学硕士院系专业：化学化工学院化学系_物理化学(含化学物理)学号：19952501

In Situ Raman Spectroscopyic Study of Silicon Etching in HF Solutions

硅刻蚀的现场拉曼光谱研究刘峰名任斌汤儆田中群（厦门大学固体表面物理化学国家重点实验室，化学系，物理化学研究所厦门361005）InSITurAMAnSPECTrOSCOPyICSTudyOfSIlICOnETCHIngInHfSOluTIOnSf....Abstract In situ Raman spectra of SiH x vibration modes For silicon electrodes in dilute aqueous HF solutions are reported For the First time using a highly sensitive conFocal Raman microprobe system.It has been Found that the intensity of SiH 2 vibration band increases while that of Si Si vibration band decreases in the photo etching process, which can be assigned to the laser induced oxidation and the aggressive attack of HF at the silicon surFace.Some possibe explanations were considered For the enhanced background.国家自然科学基金;国家教委资

Raman Spectroscopic Studies of Thiourea in Nitric Acid Medium

硫脲在硝酸介质中的拉曼光谱研究钟起玲粟晓琼刘峰名＊田中群＊（江西师范大学化学系南昌330027）（＊厦门大学固体表面物理化学国家重点实验室厦门361005）rAMAnSPECTrOSCOPICSTudIESOfTHIOurEAInnITrICACI...Abstract Using normal Raman and surFace enhanced Raman (SERS) spectroscopies, we have studied the behaviours of thiourea(TU) adsorbed on the surFace of silver electrode in the nitric acid medium and in the mixed medium of nitric acid and perchloric acid.It was Found that TU can be vertically chemi adsorbed on the surFace of silver electrode through the S and can induce coadsorbed NO - 3 through its protonated amino of TU.The SERS active centers of the surFace of silver electrode are very stable since the SERS signals of TU can be observed even at the negative potential of -2.0V.国家自然科学基金;江西省自然科学基

表面增强拉曼光谱研究硫脲及其衍生物在银电极上的共吸附行为

用表面增强拉曼光谱技术（ＳＥＲＳ）研究了ＨＣｌＯ４介质中硫脲（ＴＵ），一甲基硫脲（ＭＴＵ）和烯丙基硫脲（ＡＴＵ）在银电极表面的共吸附行为．首次报道了它们的混合物在银电极表面上竞争共吸附随电极电位变化的行为以及在所研究的共吸附体系中作为支持电解质的弱吸附ＣｌＯ－４离子被诱导物理共吸附的现象．作者联系地址：江西师范大学化学

Raman Spectroscopy Study on Coadsorption of 1 Methyl 2 Thiourea with Electrolyte Anions at Ag Electrodes

本文用电化学现场表面增强拉曼散射光谱（SErS）技术研究了MTu在HClO4、H2SO4和HnO3介质中分别与一种或两种无机阴离子的共吸附行为，发现ClO-4、SO2-4和nO-3等弱吸附无机阴离子均能被MTu诱导物理吸附在其质子化了的氨基（nH＋3）上，这三种无机阴离子被MTu诱导物理吸附的强弱顺序是：在电极电位位于-0.2V~-0.7V区间时，SO2-4＞ClO-4＞nO-3，在电位位于-0.8V~-1.2V区间时，ClO-4＞SO2-4＞nO-3。Using surFace enhanced Raman spectroscopy (SERS), we have studied the coadsorption of 1 methyl 2 thiourea (MTU) with one or two kinds of inorganic anions in perchloric acid, sulphuric acid, nitric acid medium respectively at silver electrodes.The results indicate that inorganic anions with weak coadsorbability such as ClO - 4,SO 2- 4 and NO - 3 can be physically induced to absorb through the protonated amino group of MTU.It was Found that the coadsorbability of these anions with MTU is in the order of SO 2- 4>ClO - 4>NO - 3 in the potential region From -0 2V to -0 7V and ClO - 4>SO 2- 4>NO - 3 in the potential region From -0 8V to -1 2V.国家自然科学基金;江西省自然科学基

Confocal Microprobe Raman Spectroscopy for Investigating the Electrochemical Interface

系统地介绍了将共焦显微拉曼光谱系统用于电化学界面研究的方法 ,包括铂电极的粗糙和电化学拉曼电解池的设计 .进行了铂上氢、氧和氯共吸附的拉曼光谱研究 .通过对甲醇氧化过程的现场跟踪 ,提出检测界面区溶液浓度变化和计算溶液 pH值的方法 .实验表明拉曼光谱技术可作为研究实际应用体系的重要工具 .The invention of the surface enhanced Raman spectroscopy (SERS) in the mid of 1970s, opened an entirely new and very promising area. However, it was found that SERS of practical application in electrochemistry can only be found on noble metal surfaces, such as Ag, Au and Cu that exhibit huge surface enhancement [1] . This greatly limits the application of SERS in electrochemistry. In electrocatalysis, corrosion inhibition, sensor, and power source, the most widely used materials are Pt, Fe and Ni and their alloys as well as Si. Thus, it is of great significance to extend surface Raman study to transition metals and semiconductors. Although the effort has been made along this direction by several groups since the late of 1970s, only recently, this goal has been attained [2,3] . The success of our work towards the goal is benefited from the improvement of the Raman instrumentation and the development of proper electrode surface pretreatment for transition metal surfaces. The employment of the charge_coupled device (CCD) detector, the confocal microscope, and the notch filter in the Raman instrumentation, brought up a new generation Raman instrument. It provides very high sensitivity that can partially break the limitation of the sensitivity to the surface Raman investigation [4] . The most important is, with the confocal pinhole, the instrument can only collect the light from the focus of the laser, thus it can effectively exclude the interference of the solution Raman signal, which makes the detection of very weak Raman signal from surface feasible. The emphasis of this paper is placed on the methodology. Some examples are given to demonstrate the advance in this area.作者联系地址：厦门大学化学系!固体表面物理化学国家重点实验室,福建厦门361005,厦门大学化学系!固体表面物理化学国家重点实验室,福建厦门361005,厦门大学化学系!固体表面物理化学国家重点实验室,福建厦门361005,厦门大学化学系!固体表面物理化学国家重点实验室,福建厦门361005Author's Address: Dept. of Chem., State Key Lab. for Phys. Chem. of Sol. Surf. and Inst. of Phys. Chem., Xiamen Univ., Xiamen 361005, Chin

各种过渡金属、合金和半导体电极上的表面拉曼光谱

各种过渡金属、合金和半导体电极上的表面拉曼光谱高劲松任斌黄群健王仲权蔡文斌李筱琴刘峰名佘春兴田中群（厦门大学固体表面物理化学国家重点实验室化学系物理化学研究所361005）SurfACErAMAnSPECTrOSCOPyOfTrAnSITIOnME...国家自然科学基金委;国家教委资

Fabrications and Characterizations of Porous Silicon by Tow-step Techniques I:Constant Current Application

本工作通过采用电化学极 -化学氧化两步法在 1:1氢氟酸和乙醇溶液中制备出孔径约为 1～ 2 μm ,厚度大经为 6～ 10 μm的多孔硅样品 .首先将 0 .0 3A/cm2 的恒电流施加到p( 10 0 )硅片一段时间 ,然后将该硅片浸到 2 0 %的硝酸溶液中氧化一段时间 .通过此方法获得的多孔硅结构再进一步用扫描电子显微镜和拉曼光谱仪进行表面形貌和光学性质的考察 .所有制备出的多孔硅结构均有光致发光现象 .老化的多孔硅样品 (在干燥器放置一年 )的光致发光谱峰强度明显增强 ,但分别经过苯乙烯和十六碳烯 ( 1)两种有机溶剂处理 1h后的老化多孔硅样品的光致发光强度却没有显著改变 .Porous silicon structures were formed by a two step technique consisting of electrochemical polarization and chemical oxidation processes in 1∶1 hydrofluoric acid and ethanol solutions. A constant current density of 0.03 A/cm 2 was applied to p type silicon wafers, followed by chemical treatment in 20% nitric acid solutions. These samples were then carefully examined by scanning electron microscope (SEM) and Raman spectrometer to study their surface morphologies and optical properties. After a year storage in a desiccator, the aged porous silicon samples were re examined by SEM and Raman spectrometer before and after treated with styrene and decene(1) organic solvents, respectively. It was found that the Raman intensities of the aged porous silicon samples were significantly enhanced. However, the treatments of the aged porous silicon samples with tow organic solvents did not alter their optical properties.作者联系地址：厦门大学!福建厦门361005,厦门大学化学系!福建厦门361005,厦门大学材料科学系!福建厦门361005,厦门大学化学系!福建厦门361005,厦门大学化学系!福建厦门361005,厦门大学分析测试中心!福建厦门361005Author's Address: Department of Chemistry, ** Department of Materials Science State Key Laboratory for Physical Chemistry of Solid Surfaces *** Center fo

Fabrications and Characterizations of Porous Silicon by Two-step Techniques II: Pulse Current Application

采用脉冲阳极 /阴极电流和化学氧化两步法分别在 1∶1的氢氟酸和乙醇溶液中及 2 0 %硝酸溶液中制备出孔径约为 0 .5～ 3μm ,厚度大约为 10～ 2 0 μm的多孔硅样品 ,将获得的多孔硅结构再进一步用扫描电子显微镜和拉曼光谱仪进行表面形貌和光学性质的考察 .与恒电流 -化学氧化两步法制得的多孔硅相比 ,用脉冲电流法得到的多孔硅的孔径范围较大 ,且多孔层较厚 .制备时加紫外光照显著提高了多孔硅的厚度 ,并发生“蓝移”现象 .用脉冲电流法制得的多孔硅在老化后 (在干燥器放置一年 )同样观察到光致发光明显增强 .Porous silicon structures were formed by two?step technique consisting of pulse current applications in 1∶1 hydrofluoric acid and ethanol solutions and chemical oxidation in 20% nitric acid solutions. Their surface morphologies and optical properties were characterized by scanning electron microscope (SEM) and Raman spectrometer, and compared with those obtained by constant current application. More uniform pore formation on p(100) silicon wafers was observed by pulse current application. Illumination with an ultraviolet lamp during the pulse current application accelerated the macropore formation, accordingly, the optical properties were changed.作者联系地址：厦门大学化学系!福建厦门361005,厦门大学化学系!福建厦门361005,厦门大学化学系!福建厦门361005,厦门大学固体表面物理化学国家重点实验室化学系!福建厦门361005,厦门大学化学系!福建厦门361005,厦门大学化学系分析测试中心!福建厦门361005Author's Address: 1. Dept. of Chem., 2. State Key Lab. for Phys. Chem. of Solid Surfaces, 3. Center for Instrumental Anal. and Measurements, Xiamen Univ., X