Transient Rayleigh-Benard-Marangoni Convection due to Evaporation : a Linear Non-normal Stability Analysis

The convective instability in a plane liquid layer with time-dependent temperature profile is investigated by means of a general method suitable for linear stability analysis of an unsteady basic flow. The method is based on a non-normal approach, and predicts the onset of instability, critical wave number and time. The method is applied to transient Rayleigh-Benard-Marangoni convection due to cooling by evaporation. Numerical results as well as theoretical scalings for the critical parameters as function of the Biot number are presented for the limiting cases of purely buoyancy-driven and purely surface-tension-driven convection. Critical parameters from calculations are in good agreement with those from experiments on drying polymer solutions, where the surface cooling is induced by solvent evaporation.Comment: 31 pages, 8 figure

Use of Nebulized Amphotericin B in the Treatment of Allergic Bronchopulmonary Aspergillosis in Cystic Fibrosis

Background. Systemic steroids and adjunctive antifungal therapy are the cornerstone in treating allergic bronchopulmonary aspergillosis (ABPA) in the context of CF. Aim. Evaluate the use of inhaled amphotericin B (iAMB) as antifungal agent in this context. Methods. Report of 7 CF patients with recurrent or difficult to treat ABPA and failure to taper systemic corticosteroids treated with AMB deoxycholate (AMB-d) (Fungizone 25 mg 3× a week) or AMB lipid complex (ABLC) (Abelcet 50 mg twice weekly). Successful therapy was defined as steroid withdrawal without ABPA relapse within 12 months. Results. Therapy was successful in 6 of 7 patients treated with iAMB. In 5/6, lung function improved. The patient with treatment failure has concomitant MAC lung infection. Conclusion. Inhaled AMB may be an alternative to commonly used adjunctive antifungal therapy in the treatment of ABPA. More data are needed on safety and efficacy

Role of semicore states in the electronic structure of group-III nitrides: An exact exchange study

The bandstructure of the zinc-blende phase of AlN, GaN, InN is calculated employing the exact-exchange (EXX) Kohn-Sham density-functional theory and a pseudopotential plane-wave approach. The cation semicore d electrons are treated both as valence and as core states. The EXX bandgaps of AlN and GaN (obtained with the Ga 3d electrons included as core states) are in excellent agreement with previous EXX results, GW calculations and experiment. Inclusion of the semicore d electrons as valence states leads to a large reduction in the EXX bandgaps of GaN and InN. Contrary to common belief, the removal of the self-interaction, by the EXX approach, does not account for the large disagreement for the position of the semicore d electrons between the LDA results and experiment.Comment: 10 pages including 3 figures; related publications can be found at http://www.fhi-berlin.mpg.de/th/th.htm

Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs

Hall-effect structures with submicrometre linewidths (<0.3pm) have been fabricated in ferromagnetic thin films of Mn[sub 0.60]Al[sub 0.40] which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information