High frequency of low noise amplifier architecture for WiMAX application: A review

The low noise amplifier (LNA) circuit is exceptionally imperative as it promotes and initializes general execution performance and quality of the mobile communication system. LNA's design in radio frequency (R.F.) circuit requires the trade-off numerous imperative features' including gain, noise figure (N.F.), bandwidth, stability, sensitivity, power consumption, and complexity. Improvements to the LNA's overall performance should be made to fulfil the worldwide interoperability for microwave access (WiMAX) specifications' prerequisites. The development of front-end receiver, particularly the LNA, is genuinely pivotal for long-distance communications up to 50 km for a particular system with particular requirements. The LNA architecture has recently been designed to concentrate on a single transistor, cascode, or cascade constrained in gain, bandwidth, and noise figure

Design And Analysis Of Low Noise Amplifier Using Cadence

Low Noise Amplifier also known as LNA is one of the most significant component for application in wireless communication system. It is a very important part in RF receiver because it can reduce noise of gain by the amplifier when the noise of the amplifier is received directly. The low noise amplifier has been designed to get the better performance by follow the requirement in this new era consists of high gain, low noise figure, lower power consumption, small chip area, low cost and good input and output matching. In this research, a LNA schematic consists of three stages which are common gate amplifier, common drain amplifier and active inductor is designed to mitigate this constraint. Common gate and common drain are used for input and output stages in every LNA. Both are also used for excellent input and output matching and have a potential to get a lower noise whereas for active inductor, it is used to obtain the lower power consumption and to reduce the chip size in layout design. The results show that the proposed LNA is able to achieve the best performance with a simulated gain of 14.7dB, extremely lower power consumption of 0.8mW, noise figure of 7dB and small chip area 0.26mm². Consequently, this modified LNA is appropriate for low-voltage applications especially in wireless communication system

Design of a class-F power amplifier with reconfigurable output harmonic termination in 0.13 µm CMOS

Next generation wireless communication technology requires mobile devices and base stations to support multiband multimode frequencies with higher data rate because of the type of enriched and enhanced features and services that are provided to the end user. The challenge for next generation PA designers is to provide high efficiency, output power and good linearity across multiple frequency bands, modulation standards and bandwidth. Current industry solution involves parallel PAs dedicated to a single band of operation. As more and more features are added, more and more PAs will be required with increasing cost, area and complexity. As a solution to this problem, one tunable fully integrated class-F power amplifier with reconfigurable output harmonic termination is proposed, designed, fabricated and tested with a commercially available 0.13µm CMOS process technology. By using the coupling between the primary and the secondary winding of an on chip transformer with a variable secondary termination capacitance, the second and third harmonic short and open circuit frequencies are dynamically tuned from 700 MHz to 1200 MHz and achieve high efficiency and output power. To overcome CMOS process low break down voltage, a series voltage combining approach is used for the power device to boost output power, by allowing the power supply to exceed process limits. The fabricated die was packaged and mounted to a printed circuit board for evaluation. Compared to previously publish fully integrated PAs, our design exhibits superior peak power added efficiency, 48.4%, and decent saturated output power and power gain of 24.6 dBm and 16.5 dB respectively with reconfigurability from 700 MHz to 1200 MHz

High performance building blocks for wireless receiver: multi-stage amplifiers and low noise amplifiers

Different wireless communication systems utilizing different standards and for multiple applications have penetrated the normal people's life, such as Cell phone, Wireless LAN, Bluetooth, Ultra wideband (UWB) and WiMAX systems. The wireless receiver normally serves as the primary part of the system, which heavily influences the system performance. This research concentrates on the designs of several important blocks of the receiver; multi-stage amplifier and low noise amplifier. Two novel multi-stage amplifier typologies are proposed to improve the bandwidth and reduce the silicon area for the application where a large capacitive load exists. They were designed using AMI 0.5 m µ CMOS technology. The simulation and measurement results show they have the best Figure-of-Merits (FOMs) in terms of small signal and large signal performances, with 4.6MHz and 9MHz bandwidth while consuming 0.38mW and 0.4mW power from a 2V power supply. Two Low Noise Amplifiers (LNAs) are proposed, with one designed for narrowband application and the other for UWB application. A noise reduction technique is proposed for the differential cascode Common Source LNA (CS-LNA), which reduces the LNA Noise Figure (NF), increases the LNA gain, and improves the LNA linearity. At the same time, a novel Common Gate LNA (CG-LNA) is proposed for UWB application, which has better linearity, lower power consumption, and reasonable noise performance. Finally a novel practical current injection built-in-test (BIT) technique is proposed for the RF Front-end circuits. If the off-chip component Lg and Rs values are well controlled, the proposed technique can estimate the voltage gain of the LNA with less than 1dB (8%) error

High Performance RF and Basdband Analog-to-Digital Interface for Multi-standard/Wideband Applications

The prevalence of wireless standards and the introduction of dynamic standards/applications, such as software-defined radio, necessitate the next generation wireless devices that integrate multiple standards in a single chip-set to support a variety of services. To reduce the cost and area of such multi-standard handheld devices, reconfigurability is desirable, and the hardware should be shared/reused as much as possible. This research proposes several novel circuit topologies that can meet various specifications with minimum cost, which are suited for multi-standard applications. This doctoral study has two separate contributions: 1. The low noise amplifier (LNA) for the RF front-end; and 2. The analog-to-digital converter (ADC). The first part of this dissertation focuses on LNA noise reduction and linearization techniques where two novel LNAs are designed, taped out, and measured. The first LNA, implemented in TSMC (Taiwan Semiconductor Manufacturing Company) 0.35Cm CMOS (Complementary metal-oxide-semiconductor) process, strategically combined an inductor connected at the gate of the cascode transistor and the capacitive cross-coupling to reduce the noise and nonlinearity contributions of the cascode transistors. The proposed technique reduces LNA NF by 0.35 dB at 2.2 GHz and increases its IIP3 and voltage gain by 2.35 dBm and 2dB respectively, without a compromise on power consumption. The second LNA, implemented in UMC (United Microelectronics Corporation) 0.13Cm CMOS process, features a practical linearization technique for high-frequency wideband applications using an active nonlinear resistor, which obtains a robust linearity improvement over process and temperature variations. The proposed linearization method is experimentally demonstrated to improve the IIP3 by 3.5 to 9 dB over a 2.5–10 GHz frequency range. A comparison of measurement results with the prior published state-of-art Ultra-Wideband (UWB) LNAs shows that the proposed linearized UWB LNA achieves excellent linearity with much less power than previously published works. The second part of this dissertation developed a reconfigurable ADC for multistandard receiver and video processors. Typical ADCs are power optimized for only one operating speed, while a reconfigurable ADC can scale its power at different speeds, enabling minimal power consumption over a broad range of sampling rates. A novel ADC architecture is proposed for programming the sampling rate with constant biasing current and single clock. The ADC was designed and fabricated using UMC 90nm CMOS process and featured good power scalability and simplified system design. The programmable speed range covers all the video formats and most of the wireless communication standards, while achieving comparable Figure-of-Merit with customized ADCs at each performance node. Since bias current is kept constant, the reconfigurable ADC is more robust and reliable than the previous published works

Development of Robust Analog and Mixed-Signal Circuits in the Presence of Process- Voltage-Temperature Variations

Continued improvements of transceiver systems-on-a-chip play a key role in the advancement of mobile telecommunication products as well as wireless systems in biomedical and remote sensing applications. This dissertation addresses the problems of escalating CMOS process variability and system complexity that diminish the reliability and testability of integrated systems, especially relating to the analog and mixed-signal blocks. The proposed design techniques and circuit-level attributes are aligned with current built-in testing and self-calibration trends for integrated transceivers. In this work, the main focus is on enhancing the performances of analog and mixed-signal blocks with digitally adjustable elements as well as with automatic analog tuning circuits, which are experimentally applied to conventional blocks in the receiver path in order to demonstrate the concepts. The use of digitally controllable elements to compensate for variations is exemplified with two circuits. First, a distortion cancellation method for baseband operational transconductance amplifiers is proposed that enables a third-order intermodulation (IM3) improvement of up to 22dB. Fabricated in a 0.13µm CMOS process with 1.2V supply, a transconductance-capacitor lowpass filter with the linearized amplifiers has a measured IM3 below -70dB (with 0.2V peak-to-peak input signal) and 54.5dB dynamic range over its 195MHz bandwidth. The second circuit is a 3-bit two-step quantizer with adjustable reference levels, which was designed and fabricated in 0.18µm CMOS technology as part of a continuous-time SigmaDelta analog-to-digital converter system. With 5mV resolution at a 400MHz sampling frequency, the quantizer's static power dissipation is 24mW and its die area is 0.4mm^2. An alternative to electrical power detectors is introduced by outlining a strategy for built-in testing of analog circuits with on-chip temperature sensors. Comparisons of an amplifier's measurement results at 1GHz with the measured DC voltage output of an on-chip temperature sensor show that the amplifier's power dissipation can be monitored and its 1-dB compression point can be estimated with less than 1dB error. The sensor has a tunable sensitivity up to 200mV/mW, a power detection range measured up to 16mW, and it occupies a die area of 0.012mm^2 in standard 0.18µm CMOS technology. Finally, an analog calibration technique is discussed to lessen the mismatch between transistors in the differential high-frequency signal path of analog CMOS circuits. The proposed methodology involves auxiliary transistors that sense the existing mismatch as part of a feedback loop for error minimization. It was assessed by performing statistical Monte Carlo simulations of a differential amplifier and a double-balanced mixer designed in CMOS technologies

Towards Enhancing Analog Circuits Sizing Using SMT-based Techniques

ABSTRACT This paper presents an approach for enhancing analog circuit sizing using Satisfiability Modulo Theory (SMT). The circuit sizing problem is encoded using nonlinear constraints. An SMT-based algorithm exhaustively explores the design space, where the biasing-level design variables are conservatively tracked using a collection of hyperrectangles. The device dimensions are then determined by accurately relating biasing to geometry-level design parameters. We demonstrate the feasibility and efficiency of the proposed methodology on a two-stage amplifier and a folded cascode amplifier. Experimental results show that our approach can achieve higher quality in analog synthesis and unrivaled coverage of the design space

Blocker Tolerant Radio Architectures

Future radio platforms have to be inexpensive and deal with a variety of co- existence issues. The technology trend during the last few years is towards system- on-chip (SoC) that is able to process multiple standards re-using most of the digital resources. A major bottle-neck to this approach is the co-existence of these standards operating at different frequency bands that are hitting the receiver front-end. So the current research is focused on the power, area and performance optimization of various circuit building blocks of a radio for current and incoming standards. Firstly, a linearization technique for low noise amplifiers (LNAs) called, Robust Derivative Superposition (RDS) method is proposed. RDS technique is insensitive to Process Voltage and Temperature (P.V.T.) variations and is validated with two low noise transconductance amplifier (LNTA) designs in 0.18µm CMOS technology. Measurement results from 5 dies of a resistive terminated LNTA shows that the pro- posed method improves IM3 over 20dB for input power up to -18dBm, and improves IIP_(3) by 10dB. A 2V inductor-less broadband 0.3 to 2.8GHz balun-LNTA employing the proposed RDS linearization technique was designed and measured. It achieves noise figure of 6.5dB, IIP3 of 16.8dBm, and P1dB of 0.5dBm having a power consumption of 14.2mW. The balun LNTA occupies an active area of 0.06mm2. Secondly, the design of two high linearity, inductor-less, broadband LNTAs employing noise and distortion cancellation techniques is presented. Main design issues and the performance trade-offs of the circuits are discussed. In the fully differential architecture, the first LNTA covers 0.1-2GHz bandwidth and achieves a minimum noise figure (NFmin) of 3dB, IIP_(3) of 10dBm and a P_(1dB) of 0dBm while dissipating 30.2mW. The 2^(nd) low power bulk driven LNTA with 16mW power consumption achieves NFmin of 3.4dB, IIP3 of 11dBm and 0.1-3GHz bandwidth. Each LNTA occupy an active area of 0.06mm2 in 45nm CMOS. Thirdly, a continuous-time low-pass ∆ΣADC equipped with design techniques to provide robustness against loop saturation due to blockers is presented. Loop over- load detection and correction is employed to improve the ADC’s tolerance to blockers; a fast overload detector activates the input attenuator, maintaining the ADC in linear operation. To further improve ADC’s blocker tolerance, a minimally-invasive integrated low-pass filter that reduces the most critical adjacent/alternate channel blockers is implemented. An ADC prototype is implemented in a 90nm CMOS technology and experimentally it achieves 69dB dynamic range over a 20MHz bandwidth with a sampling frequency of 500MHz and 17.1mW of power consumption. The alternate channel blocker tolerance at the most critical frequency is as high as -5.5dBFS while the conventional feed-forward modulator becomes unstable at -23.5dBFS of blocker power. The proposed blocker rejection techniques are minimally-invasive and take less than 0.3µsec to settle after a strong agile blocker appears. Finally, a new radio partitioning methodology that gives robust analog and mixed signal radio development in scaled technology for SoC integration, and the co-design of RF FEM-antenna system is presented. Based on the proposed methodology, a CMOS RF front-end module (FEM) with power amplifier (PA), LNA and transmit/receive switch, co-designed with antenna is implemented. The RF FEM circuit is implemented in a 32nm CMOS technology. Post extracted simulations show a noise figure < 2.5dB, S_(21) of 14dB, IIP3 of 7dBm and P1dB of -8dBm for the receiver. Total power consumption of the receiver is 11.8mW from a 1V supply. On the trans- mitter side, PA achieves peak RF output power of 22.34dBm with peak power added efficiency (PAE) of 65% and PAE of 33% with linearization at -6dB power back off. Simulations show an efficiency of 80% for the miniaturized dipole antenna