4,325 research outputs found

    Flexible and stretchable circuit technologies for space applications

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    Flexible and stretchable circuit technologies offer reduced volume and weight, increased electrical performance, larger design freedom and improved interconnect reliability. All of these advantages are appealing for space applications. In this paper, two example technologies, the ultra-thin chip package (UTCP) and stretchable moulded interconnect (SMI), are described. The UTCP technology results in a 60 µm thick chip package, including the embedding of a 20 µm thick chip, laser or protolithic via definition to the chip contacts and application of fan out metallization. Imec’s stretchable interconnect technology is inspired by conventional rigid and flexible printed circuit board (PCB) technology. Stretchable interconnects are realized by copper meanders supported by a flexible material e.g. polyimide. Elastic materials, predominantly silicone rubbers, are used to embed the conductors and the components, thus serving as circuit carrier. The possible advantages of these technologies with respect to space applications are discussed

    Thermo-mechanical analysis of flexible and stretchable systems

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    This paper presents a summary of the modeling and technology developed for flexible and stretchable electronics. The integration of ultra thin dies at package level, with thickness in the range of 20 to 30 μ m, into flexible and/or stretchable materials are demonstrated as well as the design and reliability test of stretchable metal interconnections at board level are analyzed by both experiments and finite element modeling. These technologies can achieve mechanically bendable and stretchable subsystems. The base substrate used for the fabrication of flexible circuits is a uniform polyimide layer, while silicones materials are preferred for the stretchable circuits. The method developed for chip embedding and interconnections is named Ultra Thin Chip Package (UTCP). Extensions of this technology can be achieved by stacking and embedding thin dies in polyimide, providing large benefits in electrical performance and still allowing some mechanical flexibility. These flexible circuits can be converted into stretchable circuits by replacing the relatively rigid polyimide by a soft and elastic silicone material. We have shown through finite element modeling and experimental validation that an appropriate thermo mechanical design is necessary to achieve mechanically reliable circuits and thermally optimized packages

    Ultra thin ultrafine-pitch chip-package interconnections for embedded chip last approach

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    Ever growing demands for portability and functionality have always governed the electronic technology innovations. IC downscaling with Moore s law and system miniaturization with System-On-Package (SOP) paradigm has resulted and will continue to result in ultraminiaturized systems with unprecedented functionality at reduced cost. The trend towards 3D silicon system integration is expected to downscale IC I/O pad pitches from 40µm to 1- 5 µm in future. Device- to- system board interconnections are typically accomplished today with either wire bonding or solders. Both of these are incremental and run into either electrical or mechanical barriers as they are extended to higher density of interconnections. Alternate interconnection approaches such as compliant interconnects typically require lengthy connections and are therefore limited in terms of electrical properties, although expected to meet the mechanical requirements. As supply currents will increase upto 220 A by 2012, the current density will exceed the maximum allowable current density of solders. The intrinsic delay and electromigration in solders are other daunting issues that become critical at nanometer size technology nodes. In addition, formation of intermetallics is also a bottleneck that poses significant mechanical issues. Recently, many research groups have investigated various techniques for copper-copper direct bonding. Typically, bonding is carried out at 400oC for 30 min followed by annealing for 30 min. High thermal budget in such process makes it less attractive for integrated systems because of the associated process incompatibilities. In the present study, copper-copper bonding at ultra fine-pitch using advanced nano-conductive and non-conductive adhesives is evaluated. The proposed copper-copper based interconnects using advanced conductive and non-conductive adhesives will be a new fundamental and comprehensive paradigm to solve all the four barriers: 1) I/O pitch 2) Electrical performance 3) Reliability and 4) Cost. This thesis investigates the mechanical integrity and reliability of copper-copper bonding using advanced adhesives through test vehicle fabrication and reliability testing. Test vehicles were fabricated using low cost electro-deposition techniques and assembled onto glass carrier. Experimental results show that proposed copper-copper bonding using advanced adhesives could potentially meet all the system performance requirements for the emerging micro/nano-systems.M.S.Committee Chair: Prof. Rao R Tummala; Committee Member: Dr. Jack Moon; Committee Member: Dr. P M Ra

    Modeling, design, and characterization of through vias in silicon and glass interposers

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    Advancements in very large scale integration (VLSI) technology have led to unprecedented transistor and interconnect scaling. Further miniaturization by traditional IC scaling in future planar CMOS technology faces significant challenges. Stacking of ICs (3D IC) using three dimensional (3D) integration technology helps in significantly reducing wiring lengths, interconnect latency and power dissipation while reducing the size of the chip and enhancing performance. Interposer technology with ultra-fine pitch interconnections needs to be developed to support the huge I/O connection requirement for packaging 3D ICs. Through vias in stacked silicon ICs and interposers are the key components of a 3D system. The objective of this dissertation is to model through vias in 3D silicon and glass interposers and, to address power and high-speed signal integrity issues in 3D interposers considering silicon biasing effects. An equivalent circuit model of the through via in silicon interposer (Si TPV) has been proposed considering the bias voltage dependent Metal-Oxide-Semiconductor (MOS) capacitance effect. Important design guidelines and optimizations are proposed for Si TPVs used in the signal delivery network, power delivery network (PDN), and as variable capacitors. Through vias in glass interposers (Glass TPVs) are modeled, designed and simulated by using electromagnetic field solvers. Signal and power integrity analyses are performed for silicon and glass interposers. PDN design is proposed by utilizing the MOS capacitance of the Si TPVs for decoupling.PhDCommittee Chair: Tummala, Rao; Committee Co-Chair: Swaminathan, Madhavan; Committee Member: Lim, Sung Kyu; Committee Member: Mukhopadhyay, Saibal; Committee Member: Sitaraman, Suresh; Committee Member: Sundaram, Venk

    A review of stencil printing for microelectronic packaging

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    PurposeThe purpose of this paper is to present a detailed overview of the current stencil printing process for microelectronic packaging.Design/methodology/approachThis paper gives a thorough review of stencil printing for electronic packaging including the current state of the art.FindingsThis article explains the different stencil technologies and printing materials. It then examines the various factors that determine the outcome of a successful printing process, including printing parameters, materials, apparatus and squeegees. Relevant technical innovations in the art of stencil printing for microelectronics packaging are examined as each part of the printing process is explained.Originality/valueStencil printing is currently the cheapest and highest throughput technique to create the mechanical and electrically conductive connections between substrates, bare die, packaged chips and discrete components. As a result, this process is used extensively in the electronic packaging industry and therefore such a review paper should be of interest to a large selection of the electronics interconnect and assembly community.</jats:sec

    Novel fine pitch interconnection methods using metallised polymer spheres

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    There is an ongoing demand for electronics devices with more functionality while reducing size and cost, for example smart phones and tablet personal computers. This requirement has led to significantly higher integrated circuit input/output densities and therefore the need for off-chip interconnection pitch reduction. Flip-chip processes utilising anisotropic conductive adhesives anisotropic conductive films (ACAs/ACFs) have been successfully applied in liquid crystal display (LCD) interconnection for more than two decades. However the conflict between the need for a high particle density, to ensure sufficient the conductivity, without increasing the probability of short circuits has remained an issue since the initial utilization of ACAs/ACFs for interconnection. But this issue has become even more severe with the challenge of ultra-fine pitch interconnection. This thesis advances a potential solution to this challenge where the conductive particles typically used in ACAs are selectively deposited onto the connections ensuring conductivity without bridging. The research presented in this thesis work has been undertaken to advance the fundamental understanding of the mechanical characteristics of micro-sized metal coated polymer particles (MCPs) and their application in fine or ultra-fine pitch interconnections. This included use of a new technique based on an in-situ nanomechanical system within SEM which was utilised to study MCP fracture and failure when undergoing deformation. Different loading conditions were applied to both uncoated polymer particles and MCPs, and the in-situ system enables their observation throughout compression. The results showed that both the polymer particles and MCP display viscoelastic characteristics with clear strain-rate hardening behaviour, and that the rate of compression therefore influences the initiation of cracks and their propagation direction. Selective particle deposition using electrophoretic deposition (EPD) and magnetic deposition (MD) of Ni/Au-MCPs have been evaluated and a fine or ultra-fine pitch deposition has been demonstrated, followed by a subsequent assembly process. The MCPs were successfully positively charged using metal cations and this charging mechanism was analysed. A new theory has been proposed to explain the assembly mechanism of EPD of Ni/Au coated particles using this metal cation based charging method. The magnetic deposition experiments showed that sufficient magnetostatic interaction force between the magnetized particles and pads enables a highly selective dense deposition of particles. Successful bonding to form conductive interconnections with pre-deposited particles have been demonstrated using a thermocompression flip-chip bonder, which illustrates the applicable capability of EPD of MCPs for fine or ultra-fine pitch interconnection

    3D heterogeneous sensor system on a chip for defense and security applications

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