Emulating short-term synaptic dynamics with memristive devices

Neuromorphic architectures offer great promise for achieving computation capacities beyond conventional Von Neumann machines. The essential elements for achieving this vision are highly scalable synaptic mimics that do not undermine biological fidelity. Here we demonstrate that single solid-state TiO2 memristors can exhibit non-associative plasticity phenomena observed in biological synapses, supported by their metastable memory state transition properties. We show that, contrary to conventional uses of solid-state memory, the existence of rate-limiting volatility is a key feature for capturing short-term synaptic dynamics. We also show how the temporal dynamics of our prototypes can be exploited to implement spatio-temporal computation, demonstrating the memristors full potential for building biophysically realistic neural processing systems

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

The accumulation and extrusion of Ca2+ in the pre- and postsynaptic compartments play a critical role in initiating plastic changes in biological synapses. To emulate this fundamental process in electronic devices, we developed diffusive Ag-in-oxide memristors with a temporal response during and after stimulation similar to that of the synaptic Ca2+ dynamics. In situ high-resolution transmission electron microscopy and nanoparticle dynamics simulations both demonstrate that Ag atoms disperse under electrical bias and regroup spontaneously under zero bias because of interfacial energy minimization, closely resembling synaptic influx and extrusion of Ca2+, respectively. The diffusive memristor and its dynamics enable a direct emulation of both short- and long-term plasticity of biological synapses and represent a major advancement in hardware implementation of neuromorphic functionalities

An Investigation into Neuromorphic ICs using Memristor-CMOS Hybrid Circuits

The memristance of a memristor depends on the amount of charge flowing through it and when current stops flowing through it, it remembers the state. Thus, memristors are extremely suited for implementation of memory units. Memristors find great application in neuromorphic circuits as it is possible to couple memory and processing, compared to traditional Von-Neumann digital architectures where memory and processing are separate. Neural networks have a layered structure where information passes from one layer to another and each of these layers have the possibility of a high degree of parallelism. CMOS-Memristor based neural network accelerators provide a method of speeding up neural networks by making use of this parallelism and analog computation. In this project we have conducted an initial investigation into the current state of the art implementation of memristor based programming circuits. Various memristor programming circuits and basic neuromorphic circuits have been simulated. The next phase of our project revolved around designing basic building blocks which can be used to design neural networks. A memristor bridge based synaptic weighting block, a operational transconductor based summing block were initially designed. We then designed activation function blocks which are used to introduce controlled non-linearity. Blocks for a basic rectified linear unit and a novel implementation for tan-hyperbolic function have been proposed. An artificial neural network has been designed using these blocks to validate and test their performance. We have also used these fundamental blocks to design basic layers of Convolutional Neural Networks. Convolutional Neural Networks are heavily used in image processing applications. The core convolutional block has been designed and it has been used as an image processing kernel to test its performance.Comment: Bachelor's thesi

The Effects of Radiation on Memristor-Based Electronic Spiking Neural Networks

In this dissertation, memristor-based spiking neural networks (SNNs) are used to analyze the effect of radiation on the spatio-temporal pattern recognition (STPR) capability of the networks. Two-terminal resistive memory devices (memristors) are used as synapses to manipulate conductivity paths in the network. Spike-timing-dependent plasticity (STDP) learning behavior results in pattern learning and is achieved using biphasic shaped pre- and post-synaptic spikes. A TiO2 based non-linear drift memristor model designed in Verilog-A implements synaptic behavior and is modified to include experimentally observed effects of state-altering, ionizing, and off-state degradation radiation on the device. The impact of neuron “death” (disabled neuron circuits) due to radiation is also examined. In general, radiation interaction events distort the STDP learning curve undesirably, favoring synaptic potentiation. At lower short-term flux, the network is able to recover and relearn the pattern with consistent training, although some pixels may be affected due to stability issues. As the radiation flux and duration increases, it can overwhelm the leaky integrate-and-fire (LIF) post-synaptic neuron circuit, and the network does not learn the pattern. On the other hand, in the absence of the pattern, the radiation effects cumulate, and the system never regains stability. Neuron-death simulation results emphasize the importance of non-participating neurons during the learning process, concluding that non-participating afferents contribute to improving the learning ability of the neural network. Instantaneous neuron death proves to be more detrimental for the network compared to when the afferents die over time thus, retaining the network’s pattern learning capability

Memristors for the Curious Outsiders

We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an internal parameter. We provide an brief historical introduction, as well as an overview over the physical mechanism that lead to memristive behavior. This review is meant to guide nonpractitioners in the field of memristive circuits and their connection to machine learning and neural computation.Comment: Perpective paper for MDPI Technologies; 43 page

Spatiotemporal Pattern Detection with Neuromorphic Circuits

In this dissertation, neuromorphic circuits are used to implement spiking neural networks in order to detect spatiotemporal patterns. Unsupervised training and detection-by-design techniques were used to attain the appropriate connectomes and perform pattern detection. Unsupervised training was performed by feeding random digital spikes with a repeating embedded spatiotemporal pattern to a spiking neural network composed of leaky integrate-and-fire neurons and memristor-R(t) element circuits which implement spike-timing-dependent plasticity learning rules. Detection-by-design was achieved using neuromporphic circuits and digital logic gates. When detection-by-design was achieved using both neuromorphic circuits and digital logic gates, a network was created of spatiotemporal pattern detector circuits, each of which was capable of detecting the three fundamental spatiotemporal patterns (NA-NA-Δt, NA-NB-Δt, and NA-NB-Coincidence), in order to detect combinations of two-spike features in the desired spatiotemporal pattern. The spatiotemporal pattern was detected when all of the two-spike features were detected. Similarly, when detection-by-design was achieved using only neuromorphic circuits, a Complex Pattern Detecting Network was was formed by combining Simple Pattern Detecting Networks, each of which was capable of detecting the three fundamental spatiotemporal patterns. The Complex Pattern Detector was used in a proof-of-concept to demonstrate a detect-and-generate spatiotemporal symbol computing paradigm

Potential and Challenges of Analog Reconfigurable Computation in Modern and Future CMOS

In this work, the feasibility of the floating-gate technology in analog computing platforms in a scaled down general-purpose CMOS technology is considered. When the technology is scaled down the performance of analog circuits tends to get worse because the process parameters are optimized for digital transistors and the scaling involves the reduction of supply voltages. Generally, the challenge in analog circuit design is that all salient design metrics such as power, area, bandwidth and accuracy are interrelated. Furthermore, poor flexibility, i.e. lack of reconfigurability, the reuse of IP etc., can be considered the most severe weakness of analog hardware. On this account, digital calibration schemes are often required for improved performance or yield enhancement, whereas high flexibility/reconfigurability can not be easily achieved. Here, it is discussed whether it is possible to work around these obstacles by using floating-gate transistors (FGTs), and analyze problems associated with the practical implementation. FGT technology is attractive because it is electrically programmable and also features a charge-based built-in non-volatile memory. Apart from being ideal for canceling the circuit non-idealities due to process variations, the FGTs can also be used as computational or adaptive elements in analog circuits. The nominal gate oxide thickness in the deep sub-micron (DSM) processes is too thin to support robust charge retention and consequently the FGT becomes leaky. In principle, non-leaky FGTs can be implemented in a scaled down process without any special masks by using “double”-oxide transistors intended for providing devices that operate with higher supply voltages than general purpose devices. However, in practice the technology scaling poses several challenges which are addressed in this thesis. To provide a sufficiently wide-ranging survey, six prototype chips with varying complexity were implemented in four different DSM process nodes and investigated from this perspective. The focus is on non-leaky FGTs, but the presented autozeroing floating-gate amplifier (AFGA) demonstrates that leaky FGTs may also find a use. The simplest test structures contain only a few transistors, whereas the most complex experimental chip is an implementation of a spiking neural network (SNN) which comprises thousands of active and passive devices. More precisely, it is a fully connected (256 FGT synapses) two-layer spiking neural network (SNN), where the adaptive properties of FGT are taken advantage of. A compact realization of Spike Timing Dependent Plasticity (STDP) within the SNN is one of the key contributions of this thesis. Finally, the considerations in this thesis extend beyond CMOS to emerging nanodevices. To this end, one promising emerging nanoscale circuit element - memristor - is reviewed and its applicability for analog processing is considered. Furthermore, it is discussed how the FGT technology can be used to prototype computation paradigms compatible with these emerging two-terminal nanoscale devices in a mature and widely available CMOS technology.Siirretty Doriast