A Review of Micro-Contact Physics for Microelectromechanical Systems (MEMS) Metal Contact Switches

Innovations in relevant micro-contact areas are highlighted, these include, design, contact resistance modeling, contact materials, performance and reliability. For each area the basic theory and relevant innovations are explored. A brief comparison of actuation methods is provided to show why electrostatic actuation is most commonly used by radio frequency microelectromechanical systems designers. An examination of the important characteristics of the contact interface such as modeling and material choice is discussed. Micro-contact resistance models based on plastic, elastic-plastic and elastic deformations are reviewed. Much of the modeling for metal contact micro-switches centers around contact area and surface roughness. Surface roughness and its effect on contact area is stressed when considering micro-contact resistance modeling. Finite element models and various approaches for describing surface roughness are compared. Different contact materials to include gold, gold alloys, carbon nanotubes, composite gold-carbon nanotubes, ruthenium, ruthenium oxide, as well as tungsten have been shown to enhance contact performance and reliability with distinct trade offs for each. Finally, a review of physical and electrical failure modes witnessed by researchers are detailed and examined

BCB Based Packaging for Low Actuation Voltage RF MEMS Devices

This paper outlines the issues related to RF MEMS packaging and low actuation voltage. An original approach is presented concerning the modeling of capacitive contacts using multiphysics simulation and advanced characterization. A similar approach is used concerning packaging development where multi-physics simulations are used to optimize the process. A devoted package architecture is proposed featuring very low loss at microwave range

On the design of an Ohmic RF MEMS switch for reconfigurable microstrip antenna applications

This paper presents the analysis, design and simulation of a direct contact (dc) RF MEMS switch specified for reconfigurable microstrip array antennas. The proposed switch is indented to be built on PCB via a monolithic technology together with the antenna patches. The proposed switch will be used to allow antenna beamforming in the operating frequency range between 2GHz and 4GHz. This application requires a great number of these switches to be integrated with an array of microstrip patch elements. The proposed switch fulfills the switching characteristics as concerns the five requirements (loss, linearity, voltage/power handling, small size/power consumption, temperature), following a relatively simple design, which ensures reliability, robustness and high fabrication yiel

Improving RF characteristics of MEMS capacitive shunt switches

characteristics of MEMS capacitive shunt switches, International review on modelling and simulations, vol. 2, no. 4, pp. 401-406. Available from Deakin Research Online

Microelectromechanical Systems and Devices

The advances of microelectromechanical systems (MEMS) and devices have been instrumental in the demonstration of new devices and applications, and even in the creation of new fields of research and development: bioMEMS, actuators, microfluidic devices, RF and optical MEMS. Experience indicates a need for MEMS book covering these materials as well as the most important process steps in bulk micro-machining and modeling. We are very pleased to present this book that contains 18 chapters, written by the experts in the field of MEMS. These chapters are groups into four broad sections of BioMEMS Devices, MEMS characterization and micromachining, RF and Optical MEMS, and MEMS based Actuators. The book starts with the emerging field of bioMEMS, including MEMS coil for retinal prostheses, DNA extraction by micro/bio-fluidics devices and acoustic biosensors. MEMS characterization, micromachining, macromodels, RF and Optical MEMS switches are discussed in next sections. The book concludes with the emphasis on MEMS based actuators

A Coupled Field Multiphysics Modeling Approach to Investigate RF MEMS Switch Failure Modes under Various Operational Conditions

In this paper, the reliability of capacitive shunt RF MEMS switches have been investigated using three dimensional (3D) coupled multiphysics finite element (FE) analysis. The coupled field analysis involved three consecutive multiphysics interactions. The first interaction is characterized as a two-way sequential electromagnetic (EM)-thermal field coupling. The second interaction represented a one-way sequential thermal-structural field coupling. The third interaction portrayed a two-way sequential structural-electrostatic field coupling. An automated substructuring algorithm was utilized to reduce the computational cost of the complicated coupled multiphysics FE analysis. The results of the substructured FE model with coupled field analysis is shown to be in good agreement with the outcome of previously published experimental and numerical studies. The current numerical results indicate that the pull-in voltage and the buckling temperature of the RF switch are functions of the microfabrication residual stress state, the switch operational frequency and the surrounding packaging temperature. Furthermore, the current results point out that by introducing proper mechanical approaches such as corrugated switches and through-holes in the switch membrane, it is possible to achieve reliable pull-in voltages, at various operating temperatures. The performed analysis also shows that by controlling the mean and gradient residual stresses, generated during microfabrication, in conjunction with the proposed mechanical approaches, the power handling capability of RF MEMS switches can be increased, at a wide range of operational frequencies. These design features of RF MEMS switches are of particular importance in applications where a high RF power (frequencies above 10 GHz) and large temperature variations are expected, such as in satellites and airplane condition monitoring

Joule heat effects on reliability of RF MEMS switches

Microelectromechanical systems (MEMS) technology has been evolving for about two decades and, now it is integrated in many designs, including radio frequency (RF) switches characterized by µm dimensions. Today, designers are attempting o develop the ideal RF MEMS switch, yet electro-thermo-mechanical (ETM) effects still limit the design possibilities and adversely affect reliability of these microswitches. The ETM effects are a result of Joule heat generated at the microswitch contact areas. This heat is due to the current passing through the microswitch, characteristics of the contact interfaces, and other parameters characterizing a particular design. It significantly raises temperature of the microswitch, thus affecting the mechanical and electrical properties of the contacts, which may lead to welding, causing a major reliability issue. Advanced research was performed, in this thesis, to minimize the Joule heat effects on the contact areas, thus improving performance of the microswitch. Thermal analyses done computationally on a cantilever-type RF MEMS switch indicate heat-effected zones and the influences that various design parameters have on these zones. Uncertainty analyses were also performed to ensure accuracy of the computational results, which indicate contact temperatures on the order of 700˚C, for the cases considered in this thesis. Although these temperatures are well below the melting temperatures of the materials used, new designs of the microswitches will have to be developed, in order to lower their maximum operating temperatures and reduce temporal effects they cause, to increase reliability of the RF MEMS switches

Design for reliability applied to RF-MEMS devices and circuits issued from different TRL environments

Ces travaux de thèse visent à aborder la fiabilité des composants RF-MEMS (commutateurs en particulier) pendant la phase de conception en utilisant différents approches de procédés de fabrication. Ça veut dire que l'intérêt est focalisé en comment éliminer ou diminuer pendant la conception les effets des mécanismes de défaillance plus importants au lieu d'étudier la physique des mécanismes. La détection des différents mécanismes de défaillance est analysée en utilisant les performances RF du dispositif et le développement d'un circuit équivalent. Cette nouvelle approche permet à l'utilisateur final savoir comment les performances vont évoluer pendant le cycle de vie. La classification des procédés de fabrication a été faite en utilisant le Technology Readiness Level du procédé qui évalue le niveau de maturité de la technologie. L'analyse de différentes approches de R&D est décrite en mettant l'accent sur les différences entre les niveaux dans la classification TRL. Cette thèse montre quelle est la stratégie optimale pour aborder la fiabilité en démarrant avec un procédé très flexible (LAAS-CNRS comme exemple de baisse TRL), en continuant avec une approche composant (CEA-Leti comme moyenne TRL) et en finissant avec un procédé standard co-intégré CMOS-MEMS (IHP comme haute TRL) dont les modifications sont impossibles.This thesis is intended to deal with reliability of RF-MEMS devices (switches, in particular) from a designer point of view using different fabrication process approaches. This means that the focus will be on how to eliminate or alleviate at the design stage the effects of the most relevant failure mechanisms in each case rather than studying the underlying physics of failure. The detection of the different failure mechanisms are investigated using the RF performance of the device and the developed equivalent circuits. This novel approach allows the end-user to infer the evolution of the device performance versus time going one step further in the Design for Reliability in RF-MEMS. The division of the fabrication process has been done using the Technology Readiness Level of the process. It assesses the maturity of the technology prior to incorporating it into a system or subsystem. An analysis of the different R&D approaches will be presented by highlighting the differences between the different levels in the TRL classification. This thesis pretend to show how reliability can be improved regarding the approach of the fabrication process starting from a very flexible one (LAAS-CNRS as example of low-TRL) passing through a component approach (CEA-Leti as example of medium-TRL) and finishing with a standard co-integrated CMOS-MEMS process (IHP example of high TRL)