Ridge Gap Waveguide Based Liquid Crystal Phase Shifter

In this paper, the gap waveguide technology is examined for packaging liquid crystal (LC) in tunable microwave devices. For this purpose, a line based passive phase shifter is designed and implemented in a ridge gap waveguide (RGW) topology and filled with LC serving as functional material. The inherent direct current (DC) decoupling property of gap waveguides is used to utilize the waveguide surroundings as biasing electrodes for tuning the LC. The bed of nails structure of the RGW exhibits an E-field suppression of 76 dB in simulation, forming a completely shielded device. The phase shifter shows a maximum figure of merit (FoM) of 70 °/dB from 20 GHz to 30 GHz with a differential phase shift of 387° at 25 GHz. The insertion loss ranges from 3.5 dB to 5.5 dB depending on the applied biasing voltage of 0 V to 60 V. © 2013 IEEE

Microstrip antenna design with improved fabrication tolerance for remote vital signs monitoring and WLAN/WPAN applications at mm-wave and THz frequencies

A novel approach is introduced to design microstrip patch antennas (MPAs) with improved fabrication tolerance for highly demanded Millimetre-wave (mm-wave) (30-300GHz) and Terahertz (THz) (0.3-3THz) frequency applications. The presented MP A designing method overcomes the challenges which exist with the fabrication and implementation of the conventional MP A designs at mm-wave and THz frequencies. The following research contributions have been added to the state-ofthe- art work: (i) designing of improved size MPAs at 60GHz, 1 OOGHz, 635GHz and 835GHz to prove the designing concept, (ii) detail measurements and analysis of Remote Vital Signs Monitoring (RVSM) with various sizes of the proposed MPA arrays at 60GHz for high detection accuracy and sensitivity, (iii) designing and tes~ing of MP As for 60GHz wireless local and personal area networks (WLAN/WP AN) in point-to-pint, point-to-multipoint and dual-band applications, (iv) implementation and testing of particular Partially Reflective Surface, Dielectric Lens and Defected Ground Structures on the proposed MP A designs with novel configurations at 60GHz for bandwidth and gain enhancement, and (v~ a comprehensive experimental study on the performance of large array designs with the proposed MP A elements for mm-wave applications. The mentioned research work is explained in the coming chapters in details. Moreover, all mentioned work has already been published

Four-element phased-array beamformers and a self-interference canceling full-duplex transciver in 130-nm SiGe for 5G applications at 26 GHz

This thesis is on the design of radio-frequency (RF) integrated front-end circuits for next generation 5G communication systems. The demand for higher data rates and lower latency in 5G networks can only be met using several new technologies including, but not limited to, mm-waves, massive-MIMO, and full-duplex. Use of mm-waves provides more bandwidth that is necessary for high data rates at the cost of increased attenuation in air. Massive-MIMO arrays are required to compensate for this increased path loss by providing beam steering and array gain. Furthermore, full duplex operation is desirable for improved spectrum efficiency and reduced latency. The difficulty of full duplex operation is the self-interference (SI) between transmit (TX) and receive (RX) paths. Conventional methods to suppress this interference utilize either bulky circulators, isolators, couplers or two separate antennas. These methods are not suitable for fully-integrated full-duplex massive-MIMO arrays. This thesis presents circuit and system level solutions to the issues summarized above, in the form of SiGe integrated circuits for 5G applications at 26 GHz. First, a full-duplex RF front-end architecture is proposed that is scalable to massive-MIMO arrays. It is based on blind, RF self-interference cancellation that is applicable to single/shared antenna front-ends. A high resolution RF vector modulator is developed, which is the key building block that empowers the full-duplex frontend architecture by achieving better than state-of-the-art 10-b monotonic phase control. This vector modulator is combined with linear-in-dB variable gain amplifiers and attenuators to realize a precision self-interference cancellation circuitry. Further, adaptive control of this SI canceler is made possible by including an on-chip low-power IQ downconverter. It correlates copies of transmitted and received signals and provides baseband/dc outputs that can be used to adaptively control the SI canceler. The solution comes at the cost of minimal additional circuitry, yet significantly eases linearity requirements of critical receiver blocks at RF/IF such as mixers and ADCs. Second, to complement the proposed full-duplex front-end architecture and to provide a more complete solution, high-performance beamformer ICs with 5-/6- b phase and 3-/4-b amplitude control capabilities are designed. Single-channel, separate transmitter and receiver beamformers are implemented targeting massive- MIMO mode of operation, and their four-channel versions are developed for phasedarray communication systems. Better than state-of-the-art noise performance is obtained in the RX beamformer channel, with a full-channel noise figure of 3.3 d

Design of Fully-Integrated High-Resolution Radars in CMOS and BiCMOS Technologies

The RADAR, acronym that stands for RAdio Detection And ranging, is a device that uses electromagnetic waves to detect the presence and the distance of an illuminated target. The idea of such a system was presented in the early 1900s to determine the presence of ships. Later on, with the approach of World War II, the radar gained the interest of the army who decided to use it for defense purposes, in order to detect the presence, the distance and the speed of ships, planes and even tanks. Nowadays, the use of similar systems is extended outside the military area. Common applications span from weather surveillance to Earth composition mapping and from flight control to vehicle speed monitoring. Moreover, the introduction of new ultrawideband (UWB) technologies makes it possible to perform radar imaging which can be successfully used in the automotive or medical field. The existence of a plenty of known applications is the reason behind the choice of the topic of this thesis, which is the design of fully-integrated high-resolution radars. The first part of this work gives a brief introduction on high resolution radars and describes its working principle in a mathematical way. Then it gives a comparison between the existing radar types and motivates the choice of an integrated solution instead of a discrete one. The second part concerns the analysis and design of two CMOS high-resolution radar prototypes tailored for the early detection of the breast cancer. This part begins with an explanation of the motivations behind this project. Then it gives a thorough system analysis which indicates the best radar architecture in presence of impairments and dictates all the electrical system specifications. Afterwards, it describes in depth each block of the transceivers with particular emphasis on the local oscillator (LO) generation system which is the most critical block of the designs. Finally, the last section of this part presents the measurement results. In particular, it shows that the designed radar operates over 3 octaves from 2 to 16GHz, has a conversion gain of 36dB, a flicker-noise-corner of 30Hz and a dynamic range of 107dB. These characteristics turn into a resolution of 3mm inside the body, more than enough to detect even the smallest tumor. The third and last part of this thesis focuses on the analysis and design of some important building blocks for phased-array radars, including phase shifter (PHS), true time delay (TTD) and power combiner. This part begins with an exhaustive introduction on phased array systems followed by a detailed description of each proposed lumped-element block. The main features of each block is the very low insertion loss, the wideband characteristic and the low area consumption. Finally, the major effects of circuit parasitics are described followed by simulation and measurement results

Piezoelectric thin films for bulk acoustic wave resonator applications:from processing to microwave filters

Bandpass filters for microwave frequencies realized with thin film bulk acoustic wave resonators (FBAR) are a promising alternative to current dielectric or surface acoustic wave filters for use in mobile telecommunication applications. With equivalent performance, FBAR filters are significantly smaller than dielectric filters and allow for a larger power operation than SAW filters. In addition, FBARs offer the possibility of on-chip integration, which will result in substantial volume and cost reduction. The first passive FBAR devices are now appearing on the market. They mainly cover needs in miniaturized RF-filters for the new bands around 2 GHz. A FBAR is essentially a thin piezoelectric plate sandwiched between two electrodes and acoustically isolated from the environment for energy trapping purposes. If the isolation is effectuated by an acoustic Bragg reflector, one speaks of solidly mounted resonators (SMR). Piezoelectric aluminum nitride (AlN) thin films are predominantly used in the emerging FBAR technology because AlN exhibits a sufficient electromechanical coupling coefficient kt2 , low acoustic losses at microwave frequencies, a low temperature coefficient of frequency, and its chemical composition is compatible with CMOS requirements. This thesis has two research directions. In the first part, FBAR structures based on AlN thin films were investigated for applications at X-band frequencies (7.2-8.5 GHz), i.e. operating at much higher frequencies than the ones used for present products. The goal was to identify property limitations related to such high frequencies, and to demonstrate to industry high performing SMR filters at 8 GHz. In the second part, a new material for FBAR devices was studied. The motivation is that AlN allows for a restricted filter bandwidth only, limited by its coupling factor of maximal 7%. Monocrystalline KNbO3 appears as an ideal alternative with its high coupling factor kt2 of 47%, and relatively large sound velocity of 8125m/s for longitudinal waves along the [101] direction. Piezoelectricity of KNbO3 films grown on electrodes has never been characterized. Single crystal results indicate that the optimal film texture would be (101). In this thesis, the growth of KNbO3 films on Pt electrodes was studied with the goal to achieve this texture uniformly, and to characterize piezoelectric properties. X-band FBAR's were first studied with numerical simulations based on a one-dimensional theory of the thickness-extensional bulk acoustic wave (BAW). Thickness, acoustic properties and electrical conductivity of the electrodes have a large impact on the resonator characteristics. There are conflicting requirements with respect to optimum acoustic and electrical properties of the electrode materials. An optimum thickness was calculated for 8GHz FBARs that use Pt bottom and Al top electrodes. The characteristics of ladder filters have been calculated based on the impedances of single resonators. The adjustable filter parameters, i.e. the areas of series and shunt resonators, frequency de-tuning between series and parallel resonators, and number of π-sections were screened for a process window offering maximum filter bandwidth with lowest ripple and low insertion loss for a given out-of-band rejection. An important result of the numerical simulations was that the bandwidth of ladder filters can be doubled by de-tuning the series and parallel resonators by more (1.3 times) than the difference of resonance and anti-resonance frequency. This also leads to a flatter passband while keeping the ripples below ±0.2dB. Solidly mounted resonators and filters were fabricated using an acoustic multilayer reflector consisting of AlN and SiO2 λ/4 layers. All films were sputter deposited in a high vacuum sputter cluster system with 4 process chambers. The films were patterned using standard photolithography and dry etching processes. The SMR exhibited a strong and spurious-free resonance at 8GHz with a high quality factor of 360 and electromechanical coupling coefficient of 6.0%. The temperature coefficient of frequency was -18ppm/K, and the voltage coefficient of frequency was -72ppm/V. Passband ladder filters with T- and π-topology consisting of 3 to 14 SMR were successfully demonstrated with a center frequency of 8GHz. These filters were optimized for maximum bandwidth and exhibited an insertion loss of 5.5dB, a rejection of 32dB, a 0.2dB bandwidth of 99MHz (1.3%), and a 3dB bandwidth of 224MHz (2.9%). There was good correspondence between measured and simulated filter and resonator characteristics. For perfect agreement, parasitic elements needed to be taken into account. These were a series resistance of 5Ω and a parallel conductance of 2mS in case of single resonators. The series resistance can be explained with resistive losses in the electrodes, whereas the parallel conduction was due to conduction along the surface. For π-filters, an additional series inductance of 100pH was needed to obtain a satisfactory fit. This inductance increased the out-of band rejection and insertion loss. Besides the group delay variation, all industrial specifications were met. KNbO3 was in-situ sputter deposited at 500 to 600°C using a rf magnetron source. A dedicated sputter chamber with load-lock and oxygen resistant substrate heater was built for this purpose. The high volatility of potassium oxide requires a potassium enrichment of the target. Targets with several excess concentrations (in the form of K2CO3) were studied. Stoichiometric KNbO3 films were obtained with targets containing 25 and 40% excess K. Zero and 10% excess yielded K deficient films, whereas 100% and 200% excess K led to highly unstable targets with K accumulation on the target surface, resulting in K rich second phases. The potassium-to-niobium ratio in the films depends strongly on sputter pressure and substrate temperature. Dense films, nucleated with cubic {100} texture, were obtained on platinized silicon substrates with a 10nm thick IrO2 seed layer at substrate temperatures of 520°C. At lower temperatures the films were amorphous, and at higher temperatures the films were composed of individual and facetted KNbO3 grains. The cubic high-temperature {100} texture results in a mixed (101)/(010) texture in the orthorhombic room temperature phase. The measured relative permitivity of 420 indicates that both orientations are equally present. Micro-Raman confirms the orthorhombic line splitting. Piezoelectrical and ferroelectrical activity were verified by means of a piezoelectric sensitive atomic force microscope. A very large piezoelectric activity was observed on some of the grains, and the polarization could be switched on most of the grains. However, the average d33,f = e33/c33, as measured by means of laser interferometry, showed a modest value of 24pm/V. The effective coupling factor is derived as kt2=2.8%, which is small relative to the theoretical value of 47%. The high dielectric constant and the absence of piezoelectric activity along the [010] direction are responsible for the reduction of the kt2 factor. Film roughness, complexity of deposition process and open poling issue make KNbO3 integration into BAW devices a difficult task

Resonant Tunnelling Diodes for Millimetre and Sub-Millimetre Wave Mixing Applications

The primary intention of this research work was to evaluate a topology for a sub-harmonic down conversion mixer exploiting the fourth harmonic of a LO signal. Designs were evaluated by simulation at 640GHz and 320GHz with the aim of exploring the potential of a RTD based down-converter at 640GHz, in the 580-750GHz atmospheric window, with an intermediate frequency signal in the range around 2GHz by mixing with the fourth harmonic of a 159.5GHz LO signal. Related design studies were undertaken at 320GHz which gave a simulated single side band (SSB) conversion loss of 5.7dB, and with a LO power requirement of less than -9.5dBm which vindicated the principle, as far as the design stage is concerned, of using RTDs as the non-linear mixing element, where the layer design can be tailored to favour very low pump powers. The other, related, target of the current PhD work was to also explore the potential for high LO drive level mixers and their up-conversion efficiencies using the same novel devices, i.e. RTDs, but with a different layer design, better suited to support high pump powers in this instance. For achieving the latter goal, two different sub-harmonic up-conversion mixers employing a single RTD and using the second harmonic of an LO signal were designed and evaluated at two different frequencies. The first mixer design was aimed at 180 GHz providing -7.5dBm of output power while the second one should work at 110GHz showing output power in the range of -4dBm, and was used to initially evaluate the approach and which could, in principle, be later fabricated and measured. All these down and up-conversion mixers were carefully designed using ADS and HFSS and evaluated using two different technologies, microstrip and Grounded Coplanar Waveguide (GCPW), and both compared with a nearest Schottky diode based approaches, and also their physical mask was produced in anticipation of a later fabrication stage