High-temperature optically activated GaAs power switching for aircraft digital electronic control

Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas

A 100-MIPS GaAs asynchronous microprocessor

The authors describe how they ported an asynchronous microprocessor previously implemented in CMOS to gallium arsenide, using a technology-independent asynchronous design technique. They introduce new circuits including a sense-amplifier, a completion detection circuit, and a general circuit structure for operators specified by production rules. The authors used and tested these circuits in a variety of designs

Acoustic charge transport technology investigation for advanced development transponder

Acoustic charge transport (ACT) technology has provided a basis for a new family of analog signal processors, including a programmable transversal filter (PTF). Through monolithic integration of ACT delay lines with GaAs metal semiconductor field effect transistor (MESFET) digital memory and controllers, these devices significantly extend the performance of PTF's. This article introduces the basic operation of these devices and summarizes their present and future specifications. The production and testing of these devices indicate that this new technology is a promising one for future space applications

The Conference on High Temperature Electronics

The status of and directions for high temperature electronics research and development were evaluated. Major objectives were to (1) identify common user needs; (2) put into perspective the directions for future work; and (3) address the problem of bringing to practical fruition the results of these efforts. More than half of the presentations dealt with materials and devices, rather than circuits and systems. Conference session titles and an example of a paper presented in each session are (1) User requirements: High temperature electronics applications in space explorations; (2) Devices: Passive components for high temperature operation; (3) Circuits and systems: Process characteristics and design methods for a 300 degree QUAD or AMP; and (4) Packaging: Presently available energy supply for high temperature environment

Monolithic microwave integrated circuits: Interconnections and packaging considerations

Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance

Material growth and characterization directed toward improving III-V heterojunction solar cells

In addition to the existing materials growth laboratory, the photolithographic facility and the device testing facility were completed. The majority of equipment for data acquisition, solar cell testing, materials growth and device characterization were received and are being put into operation. In the research part of the program, GaAs and GaA1As layers were grown reproducibly on GaAs substrates. These grown layers were characterized as to surface morphology, thickness and thickness uniformity. The liquid phase epitaxial growth process was used to fabricate p-n junctions in Ga(1-x)A1(x)As. Sequential deposition of two alloy layers was accomplished and detailed analysis of the effect of substrate quality and dopant on the GaA1As layer quality is presented. Finally, solar cell structures were formed by growing a thin p-GaA1As layer upon an epitaxial n-GaA1As layer. The energy gap corresponding to the long wavelength cutoff of the spectral response characteristic was 1.51-1.63 eV. Theoretical calculations of the spectral response were matched to the measured response

IC Ku-band Impatt Amplifier

High efficiency GaAs low-high-low IMPATTs were investigated. Theoretical analyses were employed to establish a design window for the material parameters to maximize microwave performance. Single mesa devices yielded typically 2 to 3 W with 16 to 23% efficiency in waveguide oscillator test circuits. IMPATTs with high reliability Pt/TiW/Pt/Au metallizations were subjected to temperature stress, non-rf bias-temperature stress, and rf bias-temperature stress. Assuming that temperature is the driving force behind the dominant failure mechanism, a mean-time-to-failure considerably greater than 500,000 hours is indicated by the stress tests. A 15 GHz, 4W, 56 dB gain microstrip amplifier was realized using GaAs FETs and IMPATTs. Power combining using a 3 db Lange coupler is employed in the power output stage having an intrinsic power-added efficiency of 15.7%. Overall dc-to-rf efficiency of the amplifier is 10.8%. The amplifier has greater than a 250 MHz, 1 db bandwidth; operates over the 0 deg to 50 C (base plate) temperature range with less than 0.5 db change in the power output; weighs 444 grams; and has a volume of 220 cu cm

Concepts for on-board satellite image registration. Volume 3: Impact of VLSI/VHSIC on satellite on-board signal processing

Anticipated major advances in integrated circuit technology in the near future are described as well as their impact on satellite onboard signal processing systems. Dramatic improvements in chip density, speed, power consumption, and system reliability are expected from very large scale integration. Improvements are expected from very large scale integration enable more intelligence to be placed on remote sensing platforms in space, meeting the goals of NASA's information adaptive system concept, a major component of the NASA End-to-End Data System program. A forecast of VLSI technological advances is presented, including a description of the Defense Department's very high speed integrated circuit program, a seven-year research and development effort

Proceedings of the Cold Electronics Workshop

The benefits and problems of the use of cold semiconductor electronics and the research and development effort required to bring cold electronics into more widespread use were examined