Investigation into voltage and process variation-aware manufacturing test

Increasing integration and complexity in IC design provides challenges for manufacturing testing. This thesis studies how process and supply voltage variation influence defect behaviour to determine the impact on manufacturing test cost and quality. The focus is on logic testing of static CMOS designs with respect to two important defect types in deep submicron CMOS: resistive bridges and full opens. The first part of the thesis addresses testing for resistive bridge defects in designs with multiple supply voltage settings. To enable analysis, a fault simulator is developed using a supply voltage-aware model for bridge defect behaviour. The analysis shows that for high defect coverage it is necessary to perform test for more than one supply voltage setting, due to supply voltage-dependent behaviour. A low-cost and effective test method is presented consisting of multi-voltage test generation that achieves high defect coverage and test set size reduction without compromise to defect coverage. Experiments on synthesised benchmarks with realistic bridge locations validate the proposed method.The second part focuses on the behaviour of full open defects under supply voltage variation. The aim is to determine the appropriate value of supply voltage to use when testing. Two models are considered for the behaviour of full open defects with and without gate tunnelling leakage influence. Analysis of the supply voltage-dependent behaviour of full open defects is performed to determine if it is required to test using more than one supply voltage to detect all full open defects. Experiments on synthesised benchmarks using an extended version of the fault simulator tool mentioned above, measure the quantitative impact of supply voltage variation on defect coverage.The final part studies the impact of process variation on the behaviour of bridge defects. Detailed analysis using synthesised ISCAS benchmarks and realistic bridge model shows that process variation leads to additional faults. If process variation is not considered in test generation, the test will fail to detect some of these faults, which leads to test escapes. A novel metric to quantify the impact of process variation on test quality is employed in the development of a new test generation tool, which achieves high bridge defect coverage. The method achieves a user-specified test quality with test sets which are smaller than test sets generated without consideration of process variation

Fault modelling and accelerated simulation of integrated circuits manufacturing defects under process variation

As silicon manufacturing process scales to and beyond the 65-nm node, process variation can no longer be ignored. The impact of process variation on integrated circuit performance and power has received significant research input. Variation-aware test, on the other hand, is a relatively new research area that is currently receiving attention worldwide.Research has shown that test without considering process variation may lead to loss of test quality. Fault modelling and simulation serve as a backbone of manufacturing test. This thesis is concerned with developing efficient fault modelling techniques and simulation methodologies that take into account the effect of process variation on manufacturing defects with particular emphasis on resistive bridges and resistive opens.The first contribution of this thesis addresses the problem of long computation time required to generate logic fault of resistive bridges under process variation by developing a fast and accurate modelling technique to model logic fault behaviour of resistive bridges.The new technique is implemented by employing two efficient voltage calculation algorithms to calculate the logic threshold voltage of driven gates and critical resistance of a fault-site to enable the computation of bridge logic faults without using SPICE. Simulation results show that the technique is fast (on average 53 times faster) and accurate (worst case is 2.64% error) when compared with HSPICE. The second contribution analyses the complexity of delay fault simulation of resistive bridges to reduce the computation time of delay fault when considering process variation. An accelerated delay fault simulation methodology of resistive bridges is developed by employing a three-step strategy to speed up the calculation of transient gate output voltage which is needed to accurately compute delay faults. Simulation results show that the methodology is on average 17.4 times faster, with 5.2% error in accuracy, when compared with HSPICE. The final contribution presents an accelerated simulation methodology of resistive opens to address the problem of long simulation time of delay fault when considering process variation. The methodology is implemented by using two efficient algorithms to accelerate the computation of transient gate output voltage and timing critical resistance of an open fault-site. Simulation results show that the methodology is on average up to 52 times faster than HSPICE, with 4.2% error in accuracy

Defect-based testing of LTS digital circuits

A Defect-Based Test (DBT) methodology for Superconductor Electronics (SCE) is presented in this thesis, so that commercial production and efficient testing of systems can be implemented in this technology in the future. In the first chapter, the features and prospects for SCE have been presented. The motivation for this research and the outline of the thesis were also described in Chapter 1. It has been shown that high-end applications such as Software-Defined Radio (SDR) and petaflop computers which are extremely difficult to implement in top-of-the-art semiconductor technologies can be realised using SCE. But, a systematic structural test methodology had yet to be developed for SCE and has been addressed in this thesis. A detailed introduction to Rapid Single-Flux Quantum (RSFQ) circuits was presented in Chapter 2. A Josephson Junction (JJ) was described with associated theory behind its operation. The JJ model used in the simulator used in this research work was also presented. RSFQ logic with logic protocols as well as the design and implementation of an example D-type flip-flop (DFF) was also introduced. Finally, advantages and disadvantages of RSFQ circuits have been discussed with focus on the latest developments in the field. Various techniques for testing RSFQ circuits were discussed in Chapter 3. A Process Defect Monitor (PDM) approach was presented for fabrication process analysis. The presented defect-monitor structures were used to gather measurement data, to find the probability of the occurrence of defects in the process which forms the first step for Inductive Fault Analysis (IFA). Results from measurements on these structures were used to create a database for defects. This information can be used as input for performing IFA. "Defect-sprinkling" over a fault-free circuit can be carried out according to the measured defect densities over various layers. After layout extraction and extensive fault simulation, the resulting information will indicate realistic faults. In addition, possible Design-for-Testability (DfT) schemes for monitoring Single-Flux Quantum (SFQ) pulses within an RSFQ circuit has also been discussed in Chapter 3. The requirement for a DfT scheme is inevitable for RSFQ circuits because of their very high frequency of operation and very low operating temperature. It was demonstrated how SFQ pulses can be monitored at an internal node of an SCE circuit, introducing observability using Test-Point Insertion (TPI). Various techniques were discussed for the introduction of DfT and to avoid the delay introduced by the DfT structure if it is required. The available features in the proposed design for customising the detector make it attractive for a detailed DBT of RSFQ circuits. The control of internal nodes has also been illustrated using TPI. The test structures that were designed and implemented to determine the occurrence of defects in the processes can also be used to locate the position for the insertion of the above mentioned DfT structures

AI/ML Algorithms and Applications in VLSI Design and Technology

An evident challenge ahead for the integrated circuit (IC) industry in the nanometer regime is the investigation and development of methods that can reduce the design complexity ensuing from growing process variations and curtail the turnaround time of chip manufacturing. Conventional methodologies employed for such tasks are largely manual; thus, time-consuming and resource-intensive. In contrast, the unique learning strategies of artificial intelligence (AI) provide numerous exciting automated approaches for handling complex and data-intensive tasks in very-large-scale integration (VLSI) design and testing. Employing AI and machine learning (ML) algorithms in VLSI design and manufacturing reduces the time and effort for understanding and processing the data within and across different abstraction levels via automated learning algorithms. It, in turn, improves the IC yield and reduces the manufacturing turnaround time. This paper thoroughly reviews the AI/ML automated approaches introduced in the past towards VLSI design and manufacturing. Moreover, we discuss the scope of AI/ML applications in the future at various abstraction levels to revolutionize the field of VLSI design, aiming for high-speed, highly intelligent, and efficient implementations

The Fifth NASA Symposium on VLSI Design

The fifth annual NASA Symposium on VLSI Design had 13 sessions including Radiation Effects, Architectures, Mixed Signal, Design Techniques, Fault Testing, Synthesis, Signal Processing, and other Featured Presentations. The symposium provides insights into developments in VLSI and digital systems which can be used to increase data systems performance. The presentations share insights into next generation advances that will serve as a basis for future VLSI design

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis

Analog Defect Injection and Fault Simulation Techniques: A Systematic Literature Review

Since the last century, the exponential growth of the semiconductor industry has led to the creation of tiny and complex integrated circuits, e.g., sensors, actuators, and smart power. Innovative techniques are needed to ensure the correct functionality of analog devices that are ubiquitous in every smart system. The ISO 26262 standard for functional safety in the automotive context specifies that fault injection is necessary to validate all electronic devices. For decades, standardization of defect modeling and injection mainly focused on digital circuits and, in a minor part, on analog ones. An initial attempt is being made with the IEEE P2427 draft standard that started to give a structured and formal organization to the analog testing field. Various methods have been proposed in the literature to speed up the fault simulation of the defect universe for an analog circuit. A more limited number of papers seek to reduce the overall simulation time by reducing the number of defects to be simulated. This literature survey describes the state-of-the-art of analog defect injection and fault simulation methods. The survey is based on the Preferred Reporting Items for Systematic Reviews and Meta-Analyses (PRISMA) methodological flow, allowing for a systematic and complete literature survey. Each selected paper has been categorized and presented to provide an overview of all the available approaches. In addition, the limitations of the various approaches are discussed by showing possible future directions

inSense: A Variation and Fault Tolerant Architecture for Nanoscale Devices

Transistor technology scaling has been the driving force in improving the size, speed, and power consumption of digital systems. As devices approach atomic size, however, their reliability and performance are increasingly compromised due to reduced noise margins, difficulties in fabrication, and emergent nano-scale phenomena. Scaled CMOS devices, in particular, suffer from process variations such as random dopant fluctuation (RDF) and line edge roughness (LER), transistor degradation mechanisms such as negative-bias temperature instability (NBTI) and hot-carrier injection (HCI), and increased sensitivity to single event upsets (SEUs). Consequently, future devices may exhibit reduced performance, diminished lifetimes, and poor reliability. This research proposes a variation and fault tolerant architecture, the inSense architecture, as a circuit-level solution to the problems induced by the aforementioned phenomena. The inSense architecture entails augmenting circuits with introspective and sensory capabilities which are able to dynamically detect and compensate for process variations, transistor degradation, and soft errors. This approach creates ``smart\u27\u27 circuits able to function despite the use of unreliable devices and is applicable to current CMOS technology as well as next-generation devices using new materials and structures. Furthermore, this work presents an automated prototype implementation of the inSense architecture targeted to CMOS devices and is evaluated via implementation in ISCAS \u2785 benchmark circuits. The automated prototype implementation is functionally verified and characterized: it is found that error detection capability (with error windows from $\approx$30-400ps) can be added for less than 2\% area overhead for circuits of non-trivial complexity. Single event transient (SET) detection capability (configurable with target set-points) is found to be functional, although it generally tracks the standard DMR implementation with respect to overheads