Technology Mapping for Circuit Optimization Using Content-Addressable Memory

The growing complexity of Field Programmable Gate Arrays (FPGA's) is leading to architectures with high input cardinality look-up tables (LUT's). This thesis describes a methodology for area-minimizing technology mapping for combinational logic, specifically designed for such FPGA architectures. This methodology, called LURU, leverages the parallel search capabilities of Content-Addressable Memories (CAM's) to outperform traditional mapping algorithms in both execution time and quality of results. The LURU algorithm is fundamentally different from other techniques for technology mapping in that LURU uses textual string representations of circuit topology in order to efficiently store and search for circuit patterns in a CAM. A circuit is mapped to the target LUT technology using both exact and inexact string matching techniques. Common subcircuit expressions (CSE's) are also identified and used for architectural optimization---a small set of CSE's is shown to effectively cover an average of 96% of the test circuits. LURU was tested with the ISCAS'85 suite of combinational benchmark circuits and compared with the mapping algorithms FlowMap and CutMap. The area reduction shown by LURU is, on average, 20% better compared to FlowMap and CutMap. The asymptotic runtime complexity of LURU is shown to be better than that of both FlowMap and CutMap

An On-line BIST RAM Architecture with Self Repair Capabilities

The emerging field of self-repair computing is expected to have a major impact on deployable systems for space missions and defense applications, where high reliability, availability, and serviceability are needed. In this context, RAM (random access memories) are among the most critical components. This paper proposes a built-in self-repair (BISR) approach for RAM cores. The proposed design, introducing minimal and technology-dependent overheads, can detect and repair a wide range of memory faults including: stuck-at, coupling, and address faults. The test and repair capabilities are used on-line, and are completely transparent to the external user, who can use the memory without any change in the memory-access protocol. Using a fault-injection environment that can emulate the occurrence of faults inside the module, the effectiveness of the proposed architecture in terms of both fault detection and repairing capability was verified. Memories of various sizes have been considered to evaluate the area-overhead introduced by this proposed architectur

Z-TCAM: An SRAM-based Architecture for TCAM

published_or_final_versio

Content Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing

As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance measurement in memory with massive parallelism, making them highly desirable for data-intensive applications. In this paper, we propose and demonstrate a novel 1-transistor-per-bit CAM based on the ferroelectric reconfigurable transistor. By exploiting the switchable polarity of the ferroelectric reconfigurable transistor, XOR/XNOR-like matching operation in CAM can be realized in a single transistor. By eliminating the need for the complementary circuit, these non-volatile CAMs based on reconfigurable transistors can offer a significant improvement in area and energy efficiency compared to conventional CAMs. NAND- and NOR-arrays of CAMs are also demonstrated, which enable multi-bit matching in a single reading operation. In addition, the NOR array of CAM cells effectively measures the Hamming distance between the input query and stored entries. Furthermore, utilizing the switchable polarity of these ferroelectric Schottky barrier transistors, we demonstrate reconfigurable logic gates with NAND/NOR dual functions, whose input-output mapping can be transformed in real-time without changing the layout. These reconfigurable circuits will serve as important building blocks for high-density data-stream processors and reconfigurable Application-Specific Integrated Circuits (r-ASICs). The CAMs and transformable logic gates based on ferroelectric reconfigurable transistors will have broad applications in data-intensive applications from image processing to machine learning and artificial intelligence

An Energy-Efficient Design Paradigm for a Memory Cell Based on Novel Nanoelectromechanical Switches

In this chapter, we explain NEMsCAM cell, a new content-addressable memory (CAM) cell, which is designed based on both CMOS technologies and nanoelectromechanical (NEM) switches. The memory part of NEMsCAM is designed with two complementary nonvolatile NEM switches and located on top of the CMOS-based comparison component. As a use case, we evaluate first-level instruction and data translation lookaside buffers (TLBs) with 16 nm CMOS technology at 2 GHz. The simulation results demonstrate that the NEMsCAM TLB reduces the energy consumption per search operation (by 27%), standby mode (by 53.9%), write operation (by 41.9%), and the area (by 40.5%) compared to a CMOS-only TLB with minimal performance overhead