Low Power Processor Architectures and Contemporary Techniques for Power Optimization – A Review

The technological evolution has increased the number of transistors for a given die area significantly and increased the switching speed from few MHz to GHz range. Such inversely proportional decline in size and boost in performance consequently demands shrinking of supply voltage and effective power dissipation in chips with millions of transistors. This has triggered substantial amount of research in power reduction techniques into almost every aspect of the chip and particularly the processor cores contained in the chip. This paper presents an overview of techniques for achieving the power efficiency mainly at the processor core level but also visits related domains such as buses and memories. There are various processor parameters and features such as supply voltage, clock frequency, cache and pipelining which can be optimized to reduce the power consumption of the processor. This paper discusses various ways in which these parameters can be optimized. Also, emerging power efficient processor architectures are overviewed and research activities are discussed which should help reader identify how these factors in a processor contribute to power consumption. Some of these concepts have been already established whereas others are still active research areas. © 2009 ACADEMY PUBLISHER

X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access Memories

Silicon-based Static Random Access Memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying \textit{von-Neumann} computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-art computing systems, to a large extent, results from the well-known \textit{von-Neumann bottleneck}. The energy and throughput inefficiency of the von-Neumann machines have been accentuated in recent times due to the present emphasis on data-intensive applications like artificial intelligence, machine learning \textit{etc}. A possible approach towards mitigating the overhead associated with the von-Neumann bottleneck is to enable \textit{in-memory} Boolean computations. In this manuscript, we present an augmented version of the conventional SRAM bit-cells, called \textit{the X-SRAM}, with the ability to perform in-memory, vector Boolean computations, in addition to the usual memory storage operations. We propose at least six different schemes for enabling in-memory vector computations including NAND, NOR, IMP (implication), XOR logic gates with respect to different bit-cell topologies $-$ the 8T cell and the 8$^+$T Differential cell. In addition, we also present a novel \textit{`read-compute-store'} scheme, wherein the computed Boolean function can be directly stored in the memory without the need of latching the data and carrying out a subsequent write operation. The feasibility of the proposed schemes has been verified using predictive transistor models and Monte-Carlo variation analysis.Comment: This article has been accepted in a future issue of IEEE Transactions on Circuits and Systems-I: Regular Paper