High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

RESISTIVE RAM BASED MAIN-MEMORY SYSTEMS: UNDERSTANDING THE OPPORTUNITIES, LIMITATIONS, AND TRADEOFFS

As DRAM faces scaling issues as a high-density memory, emerging technologies are being explored as alternatives. One promising candidate is Resistive Memories (ReRAM), which is scalable, vertically stackable, and because of the possibility of integration with standard logic process, can deliver higher density as a main-memory solution. The key differentiator with this approach involves a ReRAM memory array that integrates directly with a logic processor underneath. In this research work, I explore ReRAM as a main-memory alternative at three levels of detail – at the device level, the physical-design level, and finally at the architecture level. I begin with an overview of ReRAM and compare with alternate technologies. I look at the physical design of the solution and present the results of area studies on integrating a VSCALE processor at the 45nm technology node with a ReRAM bit-cell array. The area study was performed based on parameters specified by my collaborators at Crossbar Inc. The results showed that the optimum operating point is at 50% array efficiency with a VSCALE processor, and that this configuration incurs an area penalty of 18%. Two of the key challenges for ReRAM with respect to DRAM performance include the higher write latency requirement (typically on the order of 1us) and the lower write endurance (typically less than 10^8 cycles). This compares with DRAM write-latency times of less than 30ns (depending on technology node and generation) and write endurance of more than 10^15 write cycles. In this research work, I explore the possibility of utilizing the ReRAM cell in an intermediate state between non-volatile state and threshold state, where I intentionally tradeoff the write energy for a much lower data retention. This allows the chip to more easily replace existing DRAM-like main memory applications, without requiring higher write programming current or accommodating for a longer write latency. I performed this evaluation both at the device-level and at the architecture level. At the device-level, I used UMD’s Nano-fab lab to construct a Metal-Oxide based ReRAM bitcells on which I characterized the relationship between data-retention and write current applied. My fabricated ReRAM was composed of Titanium-Oxide and Aluminum Oxide. I also confirmed the behavior of a mixed-volatility state where a formed filament relaxes over time to move to a high-resistance level. Based on my experimental measurements, operating in the mixed volatile state would reduce write energy by 10 to 100x, and thereby improve the write endurance. Finally, at the architecture-level, I used the Structural Simulation Toolkit (SST) to characterize a ReRAM-based main-memory system and compare with a DRAM-based one using our research group’s DRAMSIM3 tool. I also characterized the sensitivity of various architectural parameters (core-to-memory controller ratio, queue depth, NoC topology) on system performance on stream and gups-based graph benchmarks which indicated that the torus topology will provide reasonable performance. Impact of the number of parallel processors indicated that at low processor counts, DRAM outperforms ReRAM due to its faster memory latency. However, at high processor counts, ReRAM with its higher number of parallel connections is able to deliver higher system performance than DRAM

Über die Entwicklung von Memsensoren

Since the postulation of the experimental realization of memristive devices in 2008, a broad variety of concepts for the fabrication of memristive devices has been pursued and the underlying switching mechanisms have been studied in detail. The unique electronic properties of memristive devices inspire applications that go beyond conventional electronics, such as using memristive devices as programmable interconnects, to realize logics for in-array-computing or in neuromorphic engineering. A particularly interesting aspect of biological neural networks is the close connection between signal detection and processing at the neuron level, which is an essential contribution to their outstanding efficiency. This work evolves around the concept of memsensors, which unify the characteristic features of memristive devices and sensor devices and as such appear as promising candidates to realize a close connection between signal detection and processing on the device level. Memsensors are a highly interdisciplinary topic, bridging research in the fields of material science and electrical engineering and relating to insights from biology and medicine through neuromorphic engineering. The major objective of this thesis is to provide tools and building blocks and showcase pathways to incorporate memristive and sensitive properties into memsensor devices. For this purpose, motivated by an experimental point of view, a nanoparticle-based memristive device with diffusive memristive switching characteristics was developed and characterised in detail and sensors relying on semiconducting metal oxide thin films and nanostructures were thoroughly studied. In addition, in terms of modelling of memsensor circuits, emerging features such as amplitude adaptation are discussed, showcasing the particular eligibility of memsensors in the context of neuromorphic engineering

Electrical detection of spin state switching in electromigrated nanogap devices

Spin crossover is an effect shown in some transition metal complexes where the spin state of the molecule undergoes a transition from a low spin to a high spin state via the application of light, pressure or a change in temperature. This behaviour makes these complexes an attractive candidate to form electronic molecular-scale switches as the electrical resistance of the compound differs between the two spin states. Although the spin crossover effect is commonly studied in its bulk form, the integration of a single molecule into a solid-state device while maintaining the magnetic bi-stability is highly desirable, but remains challenging. This is not only due to difficulties in capturing a single molecule between electrodes and making electrical connections but it is also due to the strong coupling effects imparted on the molecule by the high-density metallic states of the electrodes that can prevent the spin transition from occurring.In recent years there have been many attempts at studying spin crossover complexes at a single molecule level. Many of these have used scanning tunneling microscopy or break junction techniques. While these studies have highlighted the unique and promising electronic properties of these compounds, these techniques are unsuitable for real world devices. This thesis demonstrates a means to make electrical contact to single or small numbers of molecules between gold electrodes fabricated using a bilayer nanoimprint lithography and a feedback controlled electromigration method. This method, enabling high throughput and low-cost fabrication is potentially suitable for scaling to large area planar devices and as such may be used for commercially producing molecular devices.To validate the quality of the nanogaps, devices containing self-assembled monolayers of benzenethiol were first studied. The shape and magnitude of I-V curves measured on nanogap devices containing the benzenethiol monolayers are in good agreement with previously published work using similar molecules in mechanically controlled break junctions. The resulting I-V characteristics were analyzed using the single level resonant tunneling model as well as transition voltage spectroscopy and are consistent with transport through molecular junctions in which the benzenethiol molecules are - stacked. These highly conducting molecular junctions may have potential uses for “soft” coupling to sensitive target molecules.Following validation of the molecular nanojunction fabrication and measurement process, the experimental work shifted to studying electronic transport through spin crossover complexes with a focus on Schiff-base compounds that are specifically tailored for surface deposition. In the case of measurements made on the bulk compound, a sharp spin transition centered at a temperature around 80 K was observed, while a shift to lower temperatures was found for thin films of the complex. In contrast, nanojunction devices containing single molecules displayed very different behaviour, with distinct and reproducible telegraphic-like switching between two resistance states when cooled below 160 K. These two states are attributed to the two different spin states of the complex. The presence of these two resistive states indicates that the spin crossover is preserved at the single molecule level and that a spin-state dependent tunneling process is taking place. Interestingly, in some cases a multi-level switching behaviour is detected with four possible conductance states. This behaviour is attributed to the presence of two spin crossover molecules in the nanogap

Nanoscale Electronic Transport Studies of Novel Strongly Correlated Materials

Strongly correlated materials are those in which the electron-electron and electron-lattice interactions play pivotal roles in determining many aspects of observable physical behavior, including the electronic and magnetic properties. In this thesis, I describe electronic transport studies of novel strongly correlated materials at the nanoscale. After introducing some basic concepts, briefly reviewing historical development of the field, and discussing the process of making measurements on small length scales, I detail experimental results from studies of four specific materials: two transition metal oxide systems, and two layered transition metal dichalcogenides with intercalated magnetic moments. The first system is a modified version of a classic strongly correlated material, vanadium dioxide (VO2), which here is doped with hydrogen to suppress its metal-insulator transition and stabilize a poorly metallic phase down to liquid helium temperatures. Doped VO2 nanowires, micron flakes, and thin films display magnetoresistance (MR) consistent with weak localization physics, along with mesoscopic resistance fluctuations over short distances, raising questions about how to model transport in bad-metal correlated systems. A second transition metal oxide system is considered next: Quantum wells in SrTiO3 sandwiched between layers of SmTiO3, in which anomalous voltage fluctuation behavior is observed in etched nanostructures at low temperatures. After well-understood alternative origins are ruled out, an explanation is proposed involving a time-varying thermopower due to two-level fluctuations of etching-induced defects. Next, I shift to the topic of layered itinerant magnetic materials with intercalated moments, starting with Fe0.28TaS2, a hard ferromagnet (FM) with strong spin-orbit coupling. Here, a surprisingly large MR of nearly 70% is observed, an especially striking feature given that the closely related compounds at Fe intercalation fractions of 1/4 or 1/3 have MR nearly two orders of magnitude smaller. In the latter compounds, the Fe atoms are arranged in ordered superlattices, whereas for the 0.28 case, a portion of the Fe moments deviate from ordered arrangement and are relatively easily flipped by an external magnetic field to be anti-aligned with neighboring ordered Fe moments. This situation, combined with strong spin-orbit coupling, results in enhanced charge carrier scattering and greatly increased resistance. The thesis concludes with a study of a second layered magnetic material, V5S8 (structurally equivalent to V0.25VS2), which is found to have a magnetic field driven phase transition at low temperatures, believed to be from antiferromagnetism to paramagnetism. This transition is first order in thick crystals, but becomes second order as the crystal thickness decreases toward 10 nm. Together, the experiments described in this thesis highlight the complexity and diversity of strongly correlated materials, while showcasing the power of nanoscale electronic transport in delivering an improved understanding of these systems

The design and analysis of novel integrated phase-change photonic memory and computing devices

The current massive growth in data generation and communication challenges traditional computing and storage paradigms. The integrated silicon photonic platform may alleviate the physical limitations resulting from the use of electrical interconnects and the conventional von Neuman computing architecture, due to its intrinsic energy and bandwidth advantages. This work focuses on the development of the phase-change all-photonic memory (PPCM), a device potentially enabling the transition from the electrical to the optical domain by providing the (previously unavailable) non-volatile all-photonic storage functionality. PPCM devices allow for all-optical encoding of the information on the crystal fraction of a waveguide-implemented phase-change material layer, here Ge2Sb2Te5, which in turn modulates the transmitted signal amplitude. This thesis reports novel developments of the numerical methods necessary to emulate the physics of PPCM device operation and performance characteristics, illustrating solutions enabling the realization of a simulation framework modelling the inherently three-dimensional and self-influencing optical, thermal and phase-switching behaviour of PPCM devices. This thesis also depicts an innovative, fast and cost-effective method to characterise the key optical properties of phase-change materials (upon which the performance of PPCM devices depend), exploiting the reflection pattern of a purposely built layer stack, combined with a smart fit algorithm adapting potential solutions drawn from the scientific literature. The simulation framework developed in the thesis is used to analyse reported PPCM experimental results. Numerous sources of uncertainty are underlined, whose systematic analysis reduced to the peculiar non-linear optical properties of Ge2Sb2Te5. Yet, the data fit process validates both the simulation tool and the remaining physical assumptions, as the model captures the key aspects of the PPCM at high optical intensity, and reliably and accurately predicts its behaviour at low intensity, enabling to investigate its underpinning physical mechanisms. Finally, a novel PPCM memory architecture, exploiting the interaction of a much-reduced Ge2Sb2Te5 volume with a plasmonic resonant nanoantenna, is proposed and numerically investigated. The architecture concept is described and the memory functionality is demonstrated, underlining its potential energy and speed improvement on the conventional device by up to two orders of magnitude.Engineering and Physical Sciences Research Council (EPSRC