Investigation Of Reactively Sputtered Boron Carbon Nitride Thin Films

Research efforts have been focused in the development of hard and wear resistant coatings over the last few decades. These protective coatings find applications in the industry such as cutting tools, automobile and machine part etc. Various ceramic thin films like TiN, TiAlN, TiC, SiC and diamond-like carbon (DLC) are examples of the films used in above applications. However, increasing technological and industrial demands request thin films with more complicated and advanced properties. For this purpose, B-C-N ternary system which is based on carbon, boron and nitrogen which exhibit exceptional properties and attract much attention from mechanical, optical and electronic perspectives. Also, boron carbonitride (BCN) thin films contains interesting phases such as diamond, cubic BN (c-BN), hexagonal boron nitride (h-BN), B4C, β-C3N4. Attempts have been made to form a material with semiconducting properties between the semi metallic graphite and the insulating h-BN, or to combine the cubic phases of diamond and c-BN (BC2N heterodiamond) in order to merge the higher hardness of the diamond with the advantages of c-BN, in particular with its better chemical resistance to iron and oxygen at elevated temperatures. New microprocessor CMOS technologies require interlayer dielectric materials with lower dielectric constant than those used in current technologies to meet RC delay goals and to minimize cross-talk. Silicon oxide or fluorinated silicon oxide (SiOF) materials having dielectric constant in the range of 3.6 to 4 have been used for many technology nodes. In order to meet the aggressive RC delay goals, new technologies require dielectric materials with

Optical properties of AlNxOy thin films deposited by DC magnetron sputtering

The aluminium oxynitride system offers the possibility to obtain a wide range of optical responses, by combining metallic aluminium, aluminium oxide and aluminium nitride properties, and thus opening a significant number of possible applications. The main purpose of the present work is to study the variation of the optical properties of AlN x O y thin films as a function of their composition (by varying both x and y coefficients), and the correspondent changes in their morphology and structure. The films were deposited by DC reactive magnetron sputtering, with the discharge parameters monitored during the deposition in order to control the chemical composition. The measurements reveal a smooth change of films Reflectance/Transmittance as a function of the concentration ratio of non metallic elements (O+N) to metallic Al, thus revealing the possibility to tailor the films optical properties according to the application envisaged.Fundação para a Ciência e a Tecnologia (FCT) e ao Fundo Europeu de Desenvolvimento Regional (FEDER) – Programa Operacional “Ciência , Tecnologia, Inovação” – PTDC/CTM/69362/2006 e SFRH/BD/47118/200

Effect of Implantation Time of Cupper Nitride onto ITO Thin Films: Structural, Morphological, Electrical, and Optical Properties

Copper nitride (Cu3N) thin films have been implanted onto an electron beam evaporated films of indium tin oxide (ITO) from Cu metal target using reactive dc Magnetron Sputtering (dcMS) technique in a nitrogen/argon atmosphere at room temperature. The implantation parameter was kept constant excepting the implantation time. The effect of implantation time upon microstructural, morphological, electrical, and optical properties have been studied. The elemental composition of the as-deposited and Cu3N implanted has been studied by using the EDXS technique, and the spectrum shows peaks belonging to In, Sn, O, Cu, and N. A zinc blend structure was observed for all the investigated films with no sign of impurities. The optical direct energy bandgap E_g^opt is found to decreases from 3.49 eV to 2.62 eV with increasing the implantation time of Cu3N. The refractive index n is increased with increasing the exposure time of implantation. The refractive index has abnormal behavior in the infrared region due to the strong absorption in this region that appears in transmission spectra. The electrical resistivity decreases from 1908.22 .cm to 165.24 .cm with increasing the duration time of implantation

AlNxOy thin films deposited by DC reactive magnetron sputtering

AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resistivity of the coatings are strongly correlated with discharge parameters. Varying the reactive gas mixture partial pressure, the film properties change gradually from metallic-like films, for low reactive gas partial pressures, to stoichiometric amorphous Al2O3 insulator films, at high pressures. For intermediate reactive gas pressures, sub-stoichiometric AlN x O y films were obtained, with the electrical resistivity of the films increasing with the non metallic/metallic ratio.FEDER - Program COMPETE - Programa Operacional Factores de CompetitividadeFundação para a Ciência e a Tecnologia (FCT) - Project PTDC/CTM/69362/2006; PhD grant Nº SFRH/BD/47118/200

Pulsed laser deposited alumina thin films

International audienceThin films of amorphous alumina were fabricated using pulsed laser deposition. Topography, structural, and optical properties of alumina films were investigated depending on process parameters, specifically deposition time under vacuum and partial pressure of argon. Deposited films present good uniformity with RMS roughness ranging from 0.35 to 2.50 nm. Alumina films with thickness lower than 40 nm deposited under vacuum present a non-negligible void content that induces a decrease of the effective refractive index of the layers. Furthermore, introduction of argon gas (at 5×10−4 and 5×10−2 mbar) during the deposition process induces grainy structure of the thin films documented by an increase of RMS roughness from 0.35 to 1.5 nm. A decrease of the alumina layers’ refractive index is observed in the 300–7500 nm spectral range when increasing Ar pressur

Fabrication and Characterization of AlN-based, CMOS compatible Piezo-MEMS Devices

This paper details the development of high-quality, c-axis oriented AlN thin films up to 2 {\mu}m thick, using sputtering on platinum-coated SOI substrates for use in piezoelectric MEMS. Our comprehensive studies illustrate how important growth parameters such as the base Pt electrode quality, deposition temperature, power, and pressure, can influence film quality. With careful adjustment of these parameters, we managed to manipulate residual stresses (from compressive -1.2 GPa to tensile 230 MPa), and attain a high level of orientation in the AlN thin films, evidenced by < 5deg FWHM X-Ray diffraction peak widths. We also report on film surface quality regarding roughness, as assessed by atomic force microscopy, and grain size, as determined through scanning electron microscopy. Having attained the desired film quality, we proceeded to a fabrication process to create piezoelectric micromachined ultrasound transducers (PMUTs) with the AlN on SOI material stack, using deep reactive ion etching (DRIE). Initial evaluations of the vibrational behavior of the created devices, as observed through Laser Doppler Vibrometry, hint at the potential of these optimized AlN thin films for MEMS transducer development

Measurement and ab initio Investigation of Structural, Electronic, Optical, and Mechanical Properties of Sputtered Aluminum Nitride Thin Films

We report our results on highly textured aluminum nitride (AlN) thin films deposited on glass substrates, oriented along the c-axis, using DC-magnetron sputtering technique for different values of back pressure. The structural, electronic, optical, piezoelectric, dielectric, and elastic properties of sputtered AlN thin films are measured and characterized. In particular, X-ray powder diffraction (XRD) technique shows that AlN thin films exhibit a hexagonal structure. Moreover, we employed ab initio simulations of AlN using the Vienna Ab Initio Simulation Package (VASP) to investigate the structural and the electronic properties of hexagonal AlN structures. The experimental lattice parameters of the as-prepared thin films agree well with those calculated using the total energy minimization approach. The optical parameters of AlN thin films, such as transmittance and refractive index, were measured using UV–vis measurements. Our measurements of refractive index, n, of AlN thin films yield a value of 2.2. Furthermore, the elastic, piezoelectric, and dielectric tensors of AlN crystal are calculated using VASP. The dynamical Born effective charge tensor is reported for all atoms in the unit cell of AlN. Interestingly, ab initio simulations indicate that AlN has a static dielectric constant approximately equal to 4.68, which is in good agreement with the reported experimental value. In addition, the clamped-ion piezoelectric tensor is calculated. The diagonal components of the piezoelectric tensor are found to be e33=1.79 C/m2 and e31=−0.80 C/m2. The large values of the piezoelectric coefficients show that a polar AlN crystal exhibits a strong microwave piezoelectric effect. Additionally, the components of the elastic moduli tensor are calculated. The extraordinary electronic, optical, piezoelectric, and elastic properties make AlN thin films potential candidates for several optoelectronic, elastic, dielectric, and piezoelectric applications

Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films

In this work, we analyze the influence of the processing pressure and the substrate–target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature—an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target–substrate distance as it was varied in between 30 and 70 mm

Preparation and characterization of CrNxOy thin films: The effect of composition and structural features on the electrical behavior

Metallic oxynitrides have attracted the attention of several researchers in the last decade due to their versatile properties. Through the addition of a small amount of oxygen into a transition metal nitride film, the material’s bonding states between ionic and covalent types can be tailored, thus opening a wide range of electrical, optical, mechanical and tribological responses. Among the oxynitrides, chromium oxynitride (CrN x O y ) has many interesting applications in different technological fields. In the present work the electrical behavior of CrN x O y thin films, deposited by DC reactive magnetron sputtering, were investigated and correlated with their compositional and structural properties. The reactive gas flow, gas pressure, and target potential were monitored during the deposition in order to control the chemical composition, which depend strongly on reactive sputtering process. Depending on the particular deposition parameters that were selected, it was possible to identify three types of films with different growth conditions and physical properties. The electrical resistivity of the films, measured at room temperature, was found to depend strongly on the chemical composition of the samples