3,851 research outputs found
Cross-Layer Optimization for Power-Efficient and Robust Digital Circuits and Systems
With the increasing digital services demand, performance and power-efficiency
become vital requirements for digital circuits and systems. However, the
enabling CMOS technology scaling has been facing significant challenges of
device uncertainties, such as process, voltage, and temperature variations. To
ensure system reliability, worst-case corner assumptions are usually made in
each design level. However, the over-pessimistic worst-case margin leads to
unnecessary power waste and performance loss as high as 2.2x. Since
optimizations are traditionally confined to each specific level, those safe
margins can hardly be properly exploited.
To tackle the challenge, it is therefore advised in this Ph.D. thesis to
perform a cross-layer optimization for digital signal processing circuits and
systems, to achieve a global balance of power consumption and output quality.
To conclude, the traditional over-pessimistic worst-case approach leads to
huge power waste. In contrast, the adaptive voltage scaling approach saves
power (25% for the CORDIC application) by providing a just-needed supply
voltage. The power saving is maximized (46% for CORDIC) when a more aggressive
voltage over-scaling scheme is applied. These sparsely occurred circuit errors
produced by aggressive voltage over-scaling are mitigated by higher level error
resilient designs. For functions like FFT and CORDIC, smart error mitigation
schemes were proposed to enhance reliability (soft-errors and timing-errors,
respectively). Applications like Massive MIMO systems are robust against lower
level errors, thanks to the intrinsically redundant antennas. This property
makes it applicable to embrace digital hardware that trades quality for power
savings.Comment: 190 page
AI/ML Algorithms and Applications in VLSI Design and Technology
An evident challenge ahead for the integrated circuit (IC) industry in the
nanometer regime is the investigation and development of methods that can
reduce the design complexity ensuing from growing process variations and
curtail the turnaround time of chip manufacturing. Conventional methodologies
employed for such tasks are largely manual; thus, time-consuming and
resource-intensive. In contrast, the unique learning strategies of artificial
intelligence (AI) provide numerous exciting automated approaches for handling
complex and data-intensive tasks in very-large-scale integration (VLSI) design
and testing. Employing AI and machine learning (ML) algorithms in VLSI design
and manufacturing reduces the time and effort for understanding and processing
the data within and across different abstraction levels via automated learning
algorithms. It, in turn, improves the IC yield and reduces the manufacturing
turnaround time. This paper thoroughly reviews the AI/ML automated approaches
introduced in the past towards VLSI design and manufacturing. Moreover, we
discuss the scope of AI/ML applications in the future at various abstraction
levels to revolutionize the field of VLSI design, aiming for high-speed, highly
intelligent, and efficient implementations
Circuits and Systems Advances in Near Threshold Computing
Modern society is witnessing a sea change in ubiquitous computing, in which people have embraced computing systems as an indispensable part of day-to-day existence. Computation, storage, and communication abilities of smartphones, for example, have undergone monumental changes over the past decade. However, global emphasis on creating and sustaining green environments is leading to a rapid and ongoing proliferation of edge computing systems and applications. As a broad spectrum of healthcare, home, and transport applications shift to the edge of the network, near-threshold computing (NTC) is emerging as one of the promising low-power computing platforms. An NTC device sets its supply voltage close to its threshold voltage, dramatically reducing the energy consumption. Despite showing substantial promise in terms of energy efficiency, NTC is yet to see widescale commercial adoption. This is because circuits and systems operating with NTC suffer from several problems, including increased sensitivity to process variation, reliability problems, performance degradation, and security vulnerabilities, to name a few. To realize its potential, we need designs, techniques, and solutions to overcome these challenges associated with NTC circuits and systems. The readers of this book will be able to familiarize themselves with recent advances in electronics systems, focusing on near-threshold computing
NASA Space Engineering Research Center for VLSI systems design
This annual review reports the center's activities and findings on very large scale integration (VLSI) systems design for 1990, including project status, financial support, publications, the NASA Space Engineering Research Center (SERC) Symposium on VLSI Design, research results, and outreach programs. Processor chips completed or under development are listed. Research results summarized include a design technique to harden complementary metal oxide semiconductors (CMOS) memory circuits against single event upset (SEU); improved circuit design procedures; and advances in computer aided design (CAD), communications, computer architectures, and reliability design. Also described is a high school teacher program that exposes teachers to the fundamentals of digital logic design
NEGATIVE BIAS TEMPERATURE INSTABILITY STUDIES FOR ANALOG SOC CIRCUITS
Negative Bias Temperature Instability (NBTI) is one of the recent reliability issues in
sub threshold CMOS circuits. NBTI effect on analog circuits, which require matched
device pairs and mismatches, will cause circuit failure. This work is to assess the
NBTI effect considering the voltage and the temperature variations. It also provides a
working knowledge of NBTI awareness to the circuit design community for reliable
design of the SOC analog circuit. There have been numerous studies to date on the
NBTI effect to analog circuits. However, other researchers did not study the
implication of NBTI stress on analog circuits utilizing bandgap reference circuit. The
reliability performance of all matched pair circuits, particularly the bandgap reference,
is at the mercy of aging differential. Reliability simulation is mandatory to obtain
realistic risk evaluation for circuit design reliability qualification. It is applicable to all
circuit aging problems covering both analog and digital. Failure rate varies as a
function of voltage and temperature. It is shown that PMOS is the reliabilitysusceptible
device and NBTI is the most vital failure mechanism for analog circuit in
sub-micrometer CMOS technology. This study provides a complete reliability
simulation analysis of the on-die Thermal Sensor and the Digital Analog Converter
(DAC) circuits and analyzes the effect of NBTI using reliability simulation tool. In
order to check out the robustness of the NBTI-induced SOC circuit design, a bum-in
experiment was conducted on the DAC circuits. The NBTI degradation observed in
the reliability simulation analysis has given a clue that under a severe stress condition,
a massive voltage threshold mismatch of beyond the 2mV limit was recorded. Bum-in
experimental result on DAC proves the reliability sensitivity of NBTI to the DAC
circuitry
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