Robust low-power digital circuit design in nano-CMOS technologies

Device scaling has resulted in large scale integrated, high performance, low-power, and low cost systems. However the move towards sub-100 nm technology nodes has increased variability in device characteristics due to large process variations. Variability has severe implications on digital circuit design by causing timing uncertainties in combinational circuits, degrading yield and reliability of memory elements, and increasing power density due to slow scaling of supply voltage. Conventional design methods add large pessimistic safety margins to mitigate increased variability, however, they incur large power and performance loss as the combination of worst cases occurs very rarely. In-situ monitoring of timing failures provides an opportunity to dynamically tune safety margins in proportion to on-chip variability that can significantly minimize power and performance losses. We demonstrated by simulations two delay sensor designs to detect timing failures in advance that can be coupled with different compensation techniques such as voltage scaling, body biasing, or frequency scaling to avoid actual timing failures. Our simulation results using 45 nm and 32 nm technology BSIM4 models indicate significant reduction in total power consumption under temperature and statistical variations. Future work involves using dual sensing to avoid useless voltage scaling that incurs a speed loss. SRAM cache is the first victim of increased process variations that requires handcrafted design to meet area, power, and performance requirements. We have proposed novel 6 transistors (6T), 7 transistors (7T), and 8 transistors (8T)-SRAM cells that enable variability tolerant and low-power SRAM cache designs. Increased sense-amplifier offset voltage due to device mismatch arising from high variability increases delay and power consumption of SRAM design. We have proposed two novel design techniques to reduce offset voltage dependent delays providing a high speed low-power SRAM design. Increasing leakage currents in nano-CMOS technologies pose a major challenge to a low-power reliable design. We have investigated novel segmented supply voltage architecture to reduce leakage power of the SRAM caches since they occupy bulk of the total chip area and power. Future work involves developing leakage reduction methods for the combination logic designs including SRAM peripherals

Ultra-low-power SRAM design in high variability advanced CMOS

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 163-181).Embedded SRAMs are a critical component in modern digital systems, and their role is preferentially increasing. As a result, SRAMs strongly impact the overall power, performance, and area, and, in order to manage these severely constrained trade-offs, they must be specially designed for target applications. Highly energy-constrained systems (e.g. implantable biomedical devices, multimedia handsets, etc.) are an important class of applications driving ultra-low-power SRAMs. This thesis analyzes the energy of an SRAM sub-array. Since supply- and threshold-voltage have a strong effect, targets for these are established in order to optimize energy. Despite the heavy emphasis on leakage-energy, analysis of a high-density 256x256 sub-array in 45nm LP CMOS points to two necessary optimizations: (1) aggressive supply-voltage reduction (in addition to Vt elevation), and (2) performance enhancement. Important SRAM metrics, including read/write/hold-margin and read-current, are also investigated to identify trade-offs of these optimizations. Based on the need to lower supply-voltage, a 0.35V 256kb SRAM is demonstrated in 65nm LP CMOS. It uses an 8T bit-cell with peripheral circuit-assists to improve write-margin and bit-line leakage. Additionally, redundancy, to manage the increasing impact of variability in the periphery, is proposed to improve the area-offset trade-off of sense-amplifiers, demonstrating promise for highly advanced technology nodes. Based on the need to improve performance, which is limited by density constraints, a 64kb SRAM, using an offset-compensating sense-amplifier, is demonstrated in 45nm LP CMOS with high-density 0.25[mu]m2 bit-cells.(cont.) The sense-amplifier is regenerative, but non -strobed, overcoming timing uncertainties limiting performance, and it is single-ended, for compatibility with 8T cells. Compared to a conventional strobed sense-amplifier, it achieves 34% improvement in worst-case access-time and 4x improvement in the standard deviation of the access-time.by Naveen Verma.Ph.D

Circuit design for embedded memory in low-power integrated circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.Cataloged from PDF version of thesis.Includes bibliographical references (p. 141-152).This thesis explores the challenges for integrating embedded static random access memory (SRAM) and non-volatile memory-based on ferroelectric capacitor technology-into lowpower integrated circuits. First considered is the impact of process variation in deep-submicron technologies on SRAM, which must exhibit higher density and performance at increased levels of integration with every new semiconductor generation. Techniques to speed up the statistical analysis of physical memory designs by a factor of 100 to 10,000 relative to the conventional Monte Carlo Method are developed. The proposed methods build upon the Importance Sampling simulation algorithm and efficiently explore the sample space of transistor parameter fluctuation. Process variation in SRAM at low-voltage is further investigated experimentally with a 512kb 8T SRAM test chip in 45nm SOI CMOS technology. For active operation, an AC coupled sense amplifier and regenerative global bitline scheme are designed to operate at the limit of on current and off current separation on a single-ended SRAM bitline. The SRAM operates from 1.2 V down to 0.57 V with access times from 400ps to 3.4ns. For standby power, a data retention voltage sensor predicts the mismatch-limited minimum supply voltage without corrupting the contents of the memory. The leakage power of SRAM forces the chip designer to seek non-volatile memory in applications such as portable electronics that retain significant quantities of data over long durations. In this scenario, the energy cost of accessing data must be minimized. This thesis presents a ferroelectric random access memory (FRAM) prototype that addresses the challenges of sensing diminishingly small charge under conditions favorable to low access energy with a time-to-digital sensing scheme. The 1 Mb IT1C FRAM fabricated in 130 nm CMOS operates from 1.5 V to 1.0 V with corresponding access energy from 19.2 pJ to 9.8 pJ per bit. Finally, the computational state of sequential elements interspersed in CMOS logic, also restricts the ability to power gate. To enable simple and fast turn-on, ferroelectric capacitors are integrated into the design of a standard cell register, whose non-volatile operation is made compatible with the digital design flow. A test-case circuit containing ferroelectric registers exhibits non-volatile operation and consumes less than 1.3 pJ per bit of state information and less than 10 clock cycles to save or restore with no minimum standby power requirement in-between active periods.by Masood Qazi.Ph.D

Clock Generator Circuits for Low-Power Heterogeneous Multiprocessor Systems-on-Chip

In this work concepts and circuits for local clock generation in low-power heterogeneous multiprocessor systems-on-chip (MPSoCs) are researched and developed. The targeted systems feature a globally asynchronous locally synchronous (GALS) clocking architecture and advanced power management functionality, as for example fine-grained ultra-fast dynamic voltage and frequency scaling (DVFS). To enable this functionality compact clock generators with low chip area, low power consumption, wide output frequency range and the capability for ultra-fast frequency changes are required. They are to be instantiated individually per core. For this purpose compact all digital phase-locked loop (ADPLL) frequency synthesizers are developed. The bang-bang ADPLL architecture is analyzed using a numerical system model and optimized for low jitter accumulation. A 65nm CMOS ADPLL is implemented, featuring a novel active current bias circuit which compensates the supply voltage and temperature sensitivity of the digitally controlled oscillator (DCO) for reduced digital tuning effort. Additionally, a 28nm ADPLL with a new ultra-fast lock-in scheme based on single-shot phase synchronization is proposed. The core clock is generated by an open-loop method using phase-switching between multi-phase DCO clocks at a fixed frequency. This allows instantaneous core frequency changes for ultra-fast DVFS without re-locking the closed loop ADPLL. The sensitivity of the open-loop clock generator with respect to phase mismatch is analyzed analytically and a compensation technique by cross-coupled inverter buffers is proposed. The clock generators show small area (0.0097mm2 (65nm), 0.00234mm2 (28nm)), low power consumption (2.7mW (65nm), 0.64mW (28nm)) and they provide core clock frequencies from 83MHz to 666MHz which can be changed instantaneously. The jitter performance is compliant to DDR2/DDR3 memory interface specifications. Additionally, high-speed clocks for novel serial on-chip data transceivers are generated. The ADPLL circuits have been verified successfully by 3 testchip implementations. They enable efficient realization of future low-power MPSoCs with advanced power management functionality in deep-submicron CMOS technologies.In dieser Arbeit werden Konzepte und Schaltungen zur lokalen Takterzeugung in heterogenen Multiprozessorsystemen (MPSoCs) mit geringer Verlustleistung erforscht und entwickelt. Diese Systeme besitzen eine global-asynchrone lokal-synchrone Architektur sowie Funktionalität zum Power Management, wie z.B. das feingranulare, schnelle Skalieren von Spannung und Taktfrequenz (DVFS). Um diese Funktionalität zu realisieren werden kompakte Taktgeneratoren benötigt, welche eine kleine Chipfläche einnehmen, wenig Verlustleitung aufnehmen, einen weiten Bereich an Ausgangsfrequenzen erzeugen und diese sehr schnell ändern können. Sie sollen individuell pro Prozessorkern integriert werden. Dazu werden kompakte volldigitale Phasenregelkreise (ADPLLs) entwickelt, wobei eine bang-bang ADPLL Architektur numerisch modelliert und für kleine Jitterakkumulation optimiert wird. Es wird eine 65nm CMOS ADPLL implementiert, welche eine neuartige Kompensationsschlatung für den digital gesteuerten Oszillator (DCO) zur Verringerung der Sensitivität bezüglich Versorgungsspannung und Temperatur beinhaltet. Zusätzlich wird eine 28nm CMOS ADPLL mit einer neuen Technik zum schnellen Einschwingen unter Nutzung eines Phasensynchronisierers realisiert. Der Prozessortakt wird durch ein neuartiges Phasenmultiplex- und Frequenzteilerverfahren erzeugt, welches es ermöglicht die Taktfrequenz sofort zu ändern um schnelles DVFS zu realisieren. Die Sensitivität dieses Frequenzgenerators bezüglich Phasen-Mismatch wird theoretisch analysiert und durch Verwendung von kreuzgekoppelten Taktverstärkern kompensiert. Die hier entwickelten Taktgeneratoren haben eine kleine Chipfläche (0.0097mm2 (65nm), 0.00234mm2 (28nm)) und Leistungsaufnahme (2.7mW (65nm), 0.64mW (28nm)). Sie stellen Frequenzen von 83MHz bis 666MHz bereit, welche sofort geändert werden können. Die Schaltungen erfüllen die Jitterspezifikationen von DDR2/DDR3 Speicherinterfaces. Zusätzliche können schnelle Takte für neuartige serielle on-Chip Verbindungen erzeugt werden. Die ADPLL Schaltungen wurden erfolgreich in 3 Testchips erprobt. Sie ermöglichen die effiziente Realisierung von zukünftigen MPSoCs mit Power Management in modernsten CMOS Technologien