9,789 research outputs found
Strong spin-photon coupling in silicon
We report the strong coupling of a single electron spin and a single
microwave photon. The electron spin is trapped in a silicon double quantum dot
and the microwave photon is stored in an on-chip high-impedance superconducting
resonator. The electric field component of the cavity photon couples directly
to the charge dipole of the electron in the double dot, and indirectly to the
electron spin, through a strong local magnetic field gradient from a nearby
micromagnet. This result opens the way to the realization of large networks of
quantum dot based spin qubit registers, removing a major roadblock to scalable
quantum computing with spin qubits
An addressable quantum dot qubit with fault-tolerant control fidelity
Exciting progress towards spin-based quantum computing has recently been made
with qubits realized using nitrogen-vacancy (N-V) centers in diamond and
phosphorus atoms in silicon, including the demonstration of long coherence
times made possible by the presence of spin-free isotopes of carbon and
silicon. However, despite promising single-atom nanotechnologies, there remain
substantial challenges in coupling such qubits and addressing them
individually. Conversely, lithographically defined quantum dots have an
exchange coupling that can be precisely engineered, but strong coupling to
noise has severely limited their dephasing times and control fidelities. Here
we combine the best aspects of both spin qubit schemes and demonstrate a
gate-addressable quantum dot qubit in isotopically engineered silicon with a
control fidelity of 99.6%, obtained via Clifford based randomized benchmarking
and consistent with that required for fault-tolerant quantum computing. This
qubit has orders of magnitude improved coherence times compared with other
quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning
of the electron g*-factor, we can Stark shift the electron spin resonance (ESR)
frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct
path to large-scale arrays of addressable high-fidelity qubits that are
compatible with existing manufacturing technologies
Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
We report the dispersive readout of the spin state of a double quantum dot
formed at the corner states of a silicon nanowire field-effect transistor. Two
face-to-face top-gate electrodes allow us to independently tune the charge
occupation of the quantum dot system down to the few-electron limit. We measure
the charge stability of the double quantum dot in DC transport as well as
dispersively via in-situ gate-based radio frequency reflectometry, where one
top-gate electrode is connected to a resonator. The latter removes the need for
external charge sensors in quantum computing architectures and provides a
compact way to readout the dispersive shift caused by changes in the quantum
capacitance during interdot charge transitions. Here, we observe Pauli
spin-blockade in the high-frequency response of the circuit at finite magnetic
fields between singlet and triplet states. The blockade is lifted at higher
magnetic fields when intra-dot triplet states become the ground state
configuration. A lineshape analysis of the dispersive phase shift reveals
furthermore an intradot valley-orbit splitting of 145 eV.
Our results open up the possibility to operate compact CMOS technology as a
singlet-triplet qubit and make split-gate silicon nanowire architectures an
ideal candidate for the study of spin dynamics
Rashba spin-orbit coupling and spin relaxation in silicon quantum wells
Silicon is a leading candidate material for spin-based devices, and
two-dimensional electron gases (2DEGs) formed in silicon heterostructures have
been proposed for both spin transport and quantum dot quantum computing
applications. The key parameter for these applications is the spin relaxation
time. Here we apply the theory of D'yakonov and Perel' (DP) to calculate the
electron spin resonance linewidth of a silicon 2DEG due to structural inversion
asymmetry for arbitrary static magnetic field direction at low temperatures. We
estimate the Rashba spin-orbit coupling coefficient in silicon quantum wells
and find the and times of the spins from this mechanism as a
function of momentum scattering time, magnetic field, and device-specific
parameters. We obtain agreement with existing data for the angular dependence
of the relaxation times and show that the magnitudes are consistent with the DP
mechanism. We suggest how to increase the relaxation times by appropriate
device design.Comment: Extended derivations and info, fixed typos and refs, updated figs and
data. Worth a re-downloa
Silicon nanodevice qubits based on quantum dots and dopants
Quantum physics applied to computing is predicted to lead to revolutionary enhancements in computational speed and power. The interest in the implementation of an impurity spin based qubit in silicon for quantum computation is motivated by exceedingly long coherence times of the order of seconds, an advantage of silicon's low spin orbit coupling and its ability to be isotopically enriched to the nuclear spin zero form. In addition, the donor spin in silicon is tunable, its nuclear spin is available to be employed as a quantum memory, and there are major advantages to working with silicon in terms of infrastructure and scalability. In contrast, lithographically patterned artificial atoms called quantum dots have the complementary advantages of fast electrical operations and tunability. Here I present our attempts to develop a scalable quantum computation architecture in silicon, based on a coupled quantum dot and dopant system. I explore industry-compatible as well as industrial foundry-fabricated devices in silicon as hosts for few-electron quantum dots and utilise a high-sensitivity readout and charge sensing technique, gate-based radiofrequency reflectometry, for this purpose. I show few-electron quantum dot measurements in this device architecture, leading to a charge qubit with a novel multi-regime Landau-Zener interferometry signature, with possible applications for readout sensitivity. I also present spin-to-charge conversion measurements of a chalcogen donor atom in silicon. Lastly, I perform measurements on a foundry-fabricated silicon device showing a coupling between a donor atom and a quantum dot. I probe the relevant charge dynamics of the charge qubit, as well as observe Pauli spin blockade in the hybrid spin system, opening up the possibility to operate this coupled double quantum dot as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus
Silicon CMOS architecture for a spin-based quantum computer
Recent advances in quantum error correction (QEC) codes for fault-tolerant
quantum computing \cite{Terhal2015} and physical realizations of high-fidelity
qubits in a broad range of platforms \cite{Kok2007, Brown2011, Barends2014,
Waldherr2014, Dolde2014, Muhonen2014, Veldhorst2014} give promise for the
construction of a quantum computer based on millions of interacting qubits.
However, the classical-quantum interface remains a nascent field of
exploration. Here, we propose an architecture for a silicon-based quantum
computer processor based entirely on complementary metal-oxide-semiconductor
(CMOS) technology, which is the basis for all modern processor chips. We show
how a transistor-based control circuit together with charge-storage electrodes
can be used to operate a dense and scalable two-dimensional qubit system. The
qubits are defined by the spin states of a single electron confined in a
quantum dot, coupled via exchange interactions, controlled using a microwave
cavity, and measured via gate-based dispersive readout \cite{Colless2013}. This
system, based entirely on available technology and existing components, is
compatible with general surface code quantum error correction
\cite{Terhal2015}, enabling large-scale universal quantum computation
- …