Inhomogeneous mechanical losses in micro-oscillators with high reflectivity coating

We characterize the mechanical quality factor of micro-oscillators covered by a highly reflective coating. We test an approach to the reduction of mechanical losses, that consists in limiting the size of the coated area to reduce the strain and the consequent energy loss in this highly dissipative component. Moreover, a mechanical isolation stage is incorporated in the device. The results are discussed on the basis of an analysis of homogeneous and non-homogeneous losses in the device and validated by a set of Finite-Element models. The contributions of thermoelastic dissipation and coating losses are separated and the measured quality factors are found in agreement with the calculated values, while the absence of unmodeled losses confirms that the isolation element integrated in the device efficiently uncouples the dynamics of the mirror from the support system. Also the resonant frequencies evaluated by Finite-Element models are in good agreement with the experimental data, and allow the estimation of the Young modulus of the coating. The models that we have developed and validated are important for the design of oscillating micro-mirrors with high quality factor and, consequently, low thermal noise. Such devices are useful in general for high sensitivity sensors, and in particular for experiments of quantum opto-mechanics

A Review of Bayesian Methods in Electronic Design Automation

The utilization of Bayesian methods has been widely acknowledged as a viable solution for tackling various challenges in electronic integrated circuit (IC) design under stochastic process variation, including circuit performance modeling, yield/failure rate estimation, and circuit optimization. As the post-Moore era brings about new technologies (such as silicon photonics and quantum circuits), many of the associated issues there are similar to those encountered in electronic IC design and can be addressed using Bayesian methods. Motivated by this observation, we present a comprehensive review of Bayesian methods in electronic design automation (EDA). By doing so, we hope to equip researchers and designers with the ability to apply Bayesian methods in solving stochastic problems in electronic circuits and beyond.Comment: 24 pages, a draft version. We welcome comments and feedback, which can be sent to [email protected]

Learning for Advanced Motion Control

Iterative Learning Control (ILC) can achieve perfect tracking performance for mechatronic systems. The aim of this paper is to present an ILC design tutorial for industrial mechatronic systems. First, a preliminary analysis reveals the potential performance improvement of ILC prior to its actual implementation. Second, a frequency domain approach is presented, where fast learning is achieved through noncausal model inversion, and safe and robust learning is achieved by employing a contraction mapping theorem in conjunction with nonparametric frequency response functions. The approach is demonstrated on a desktop printer. Finally, a detailed analysis of industrial motion systems leads to several shortcomings that obstruct the widespread implementation of ILC algorithms. An overview of recently developed algorithms, including extensions using machine learning algorithms, is outlined that are aimed to facilitate broad industrial deployment.Comment: 8 pages, 15 figures, IEEE 16th International Workshop on Advanced Motion Control, 202

Virtual metrology for plasma etch processes.

Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to estimate variables of interest. This thesis addresses the challenge of virtual metrology for plasma processes, with a particular focus on semiconductor plasma etch. Introductory material covering the essentials of plasma physics, plasma etching, plasma measurement techniques, and black-box modelling techniques is rst presented for readers not familiar with these subjects. A comprehensive literature review is then completed to detail the state of the art in modelling and VM research for plasma etch processes. To demonstrate the versatility of VM, a temperature monitoring system utilising a state-space model and Luenberger observer is designed for the variable specic impulse magnetoplasma rocket (VASIMR) engine, a plasma-based space propulsion system. The temperature monitoring system uses optical emission spectroscopy (OES) measurements from the VASIMR engine plasma to correct temperature estimates in the presence of modelling error and inaccurate initial conditions. Temperature estimates within 2% of the real values are achieved using this scheme. An extensive examination of the implementation of a wafer-to-wafer VM scheme to estimate plasma etch rate for an industrial plasma etch process is presented. The VM models estimate etch rate using measurements from the processing tool and a plasma impedance monitor (PIM). A selection of modelling techniques are considered for VM modelling, and Gaussian process regression (GPR) is applied for the rst time for VM of plasma etch rate. Models with global and local scope are compared, and modelling schemes that attempt to cater for the etch process dynamics are proposed. GPR-based windowed models produce the most accurate estimates, achieving mean absolute percentage errors (MAPEs) of approximately 1:15%. The consistency of the results presented suggests that this level of accuracy represents the best accuracy achievable for the plasma etch system at the current frequency of metrology. Finally, a real-time VM and model predictive control (MPC) scheme for control of plasma electron density in an industrial etch chamber is designed and tested. The VM scheme uses PIM measurements to estimate electron density in real time. A predictive functional control (PFC) scheme is implemented to cater for a time delay in the VM system. The controller achieves time constants of less than one second, no overshoot, and excellent disturbance rejection properties. The PFC scheme is further expanded by adapting the internal model in the controller in real time in response to changes in the process operating point

Virtual metrology for plasma etch processes.

Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to estimate variables of interest. This thesis addresses the challenge of virtual metrology for plasma processes, with a particular focus on semiconductor plasma etch. Introductory material covering the essentials of plasma physics, plasma etching, plasma measurement techniques, and black-box modelling techniques is rst presented for readers not familiar with these subjects. A comprehensive literature review is then completed to detail the state of the art in modelling and VM research for plasma etch processes. To demonstrate the versatility of VM, a temperature monitoring system utilising a state-space model and Luenberger observer is designed for the variable specic impulse magnetoplasma rocket (VASIMR) engine, a plasma-based space propulsion system. The temperature monitoring system uses optical emission spectroscopy (OES) measurements from the VASIMR engine plasma to correct temperature estimates in the presence of modelling error and inaccurate initial conditions. Temperature estimates within 2% of the real values are achieved using this scheme. An extensive examination of the implementation of a wafer-to-wafer VM scheme to estimate plasma etch rate for an industrial plasma etch process is presented. The VM models estimate etch rate using measurements from the processing tool and a plasma impedance monitor (PIM). A selection of modelling techniques are considered for VM modelling, and Gaussian process regression (GPR) is applied for the rst time for VM of plasma etch rate. Models with global and local scope are compared, and modelling schemes that attempt to cater for the etch process dynamics are proposed. GPR-based windowed models produce the most accurate estimates, achieving mean absolute percentage errors (MAPEs) of approximately 1:15%. The consistency of the results presented suggests that this level of accuracy represents the best accuracy achievable for the plasma etch system at the current frequency of metrology. Finally, a real-time VM and model predictive control (MPC) scheme for control of plasma electron density in an industrial etch chamber is designed and tested. The VM scheme uses PIM measurements to estimate electron density in real time. A predictive functional control (PFC) scheme is implemented to cater for a time delay in the VM system. The controller achieves time constants of less than one second, no overshoot, and excellent disturbance rejection properties. The PFC scheme is further expanded by adapting the internal model in the controller in real time in response to changes in the process operating point

Characterization and Compensation of Network-Level Anomalies in Mixed-Signal Neuromorphic Modeling Platforms

Advancing the size and complexity of neural network models leads to an ever increasing demand for computational resources for their simulation. Neuromorphic devices offer a number of advantages over conventional computing architectures, such as high emulation speed or low power consumption, but this usually comes at the price of reduced configurability and precision. In this article, we investigate the consequences of several such factors that are common to neuromorphic devices, more specifically limited hardware resources, limited parameter configurability and parameter variations. Our final aim is to provide an array of methods for coping with such inevitable distortion mechanisms. As a platform for testing our proposed strategies, we use an executable system specification (ESS) of the BrainScaleS neuromorphic system, which has been designed as a universal emulation back-end for neuroscientific modeling. We address the most essential limitations of this device in detail and study their effects on three prototypical benchmark network models within a well-defined, systematic workflow. For each network model, we start by defining quantifiable functionality measures by which we then assess the effects of typical hardware-specific distortion mechanisms, both in idealized software simulations and on the ESS. For those effects that cause unacceptable deviations from the original network dynamics, we suggest generic compensation mechanisms and demonstrate their effectiveness. Both the suggested workflow and the investigated compensation mechanisms are largely back-end independent and do not require additional hardware configurability beyond the one required to emulate the benchmark networks in the first place. We hereby provide a generic methodological environment for configurable neuromorphic devices that are targeted at emulating large-scale, functional neural networks