43 research outputs found
Systematic Comparison of HF CMOS Transconductors
Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties. Based on bandwidth considerations, simple V-I kernels with few or no internal nodes are preferred. In a systematic way, virtually all simple kernels published in literature are generated. This is done in two steps: 1) basic 3-terminal transconductors are covered and 2) then five different techniques to combine two of them in a composite V-I kernel. In order to compare transconductors in a fair way, a normalized signal-to-noise ratio (NSNR) is defined. The basic V-I kernels and the five classes of composite V-I kernels are then compared, leading to insight in the key mechanisms that affect NSNR. Symbolic equations are derived to estimate NSNR, while simulations with more advanced MOSFET models verify the results. The results show a strong tradeoff between NSNR and transconductance tuning range. Resistively generated MOSFETs render the best NSNR results and are robust for future technology developments
0.13-µm CMOS tunable transconductor based on the body-driven gain boosting technique with application in Gm-C filters
We present a low-voltage low-power CMOS tunable
transconductor exploiting body gain boosting to increase the
small-signal output resistance. As a distinctive feature, the proposed
scheme allows the OTA transconductance to be tuned via
the current biasing the gain-boosting circuit. The proposed transconductor
has been designed in a 0.13-µm CMOS technology
and powered from a 1.2-V supply. To show a possible application,
a 0.5-MHz tunable third order Chebyshev low pass filter suitable
for the Ultra Low Power Bluetooth Standard has been designed.
The filter simulations show that all the requirements of the chosen
standard are met, with good performance in terms of linearity,
noise and power consumption
A wide dynamic range high-q high-frequency bandpass filter with an automatic quality factor tuning scheme
An 80 MHz bandpass filter with a tunable quality factor of 16∼44 using an improved transconductor circuit is presented. A noise optimized biquad structure for high-Q, high- frequency bandpass filter is proposed. The quality factor of the filter is tuned using a new quality factor locked loop algorithm. It was shown that a second-order quality factor locked loop is necessary and sufficient to tune the quality factor of a bandpass filter with zero steady state error. The accuracy, mismatch, and sensitivty analysis of the new tuning scheme was performed and analyzed. Based on the proposed noise optimized filter structure and new quality factor tuning scheme, a biquad filter was designed and fabricated in 0.25 μm BiCMOS process. The measured results show that the biquad filter achieves a SNR of 45 dB at IMD of 40 dB. The P-1dB compression point and IIP3 of the filter are -10 dBm and -2.68 dBm, respectively. The proposed biquad filter and quality factor tuning scheme consumes 58mW and 13 mW of power at 3.3 V supply.Ph.D.Committee Chair: Allen Phillip; Committee Member: Hasler Paul; Committee Member: Keezer David; Committee Member: Kenny James; Committee Member: Pan Ronghu
The design of active resistors and transductors in a CMOS technology
Merged with duplicate record 10026.1/2618 on 07.20.2017 by CS (TIS)This thesis surveys linearisation techniques for implementing monolithic MOS
active resistors and transconductors, and investigates the design of linear tunable
resistors and transconductors. Improving linearity and tunability in the presence
of non-ideal factors such as bulk modulation, mobility-degradation effects and mismatch
of transistors is a principal objective. A family of new non-saturation-mode
resistors and two novel saturation-mode transconductors are developed. Where
possible, approximate analytical expressions are derived to explain the principles
of operation. Performance comparisons of the new structures are made with other
well-known circuits and their relative advantages and disadvantages evaluated.
Experimental and simulation results are presented which validate the proposed
linearisation techniques. It is shown that the proposed family of resistors offers
improved linearity whilst the transconductors combine extended tunability with
low distortion. Continuous-time filter examples are given to demonstrate the
potential of these circuits for application in analogue signal-processing tasks.GEC Plessey Semiconductors, Plymout
High Performance Integrated Circuit Blocks for High-IF Wideband Receivers
Due to the demand for high‐performance radio frequency (RF) integrated circuit
design in the past years, a system‐on‐chip (SoC) that enables integration of analog and
digital parts on the same die has become the trend of the microelectronics industry. As
a result, a major requirement of the next generation of wireless devices is to support
multiple standards in the same chip‐set. This would enable a single device to support
multiple peripheral applications and services.
Based on the aforementioned, the traditional superheterodyne front‐end
architecture is not suitable for such applications as it would require a complete receiver
for each standard to be supported. A more attractive alternative is the highintermediate
frequency (IF) radio architecture. In this case the signal is digitalized at an
intermediate frequency such as 200MHz. As a consequence, the baseband operations,
such as down‐conversion and channel filtering, become more power and area efficient
in the digital domain. Such architecture releases the specifications for most of the front‐end building blocks, but the linearity and dynamic range of the ADC become the
bottlenecks in this system. The requirements of large bandwidth, high frequency and
enough resolution make such ADC very difficult to realize. Many ADC architectures
were analyzed and Continuous‐Time Bandpass Sigma‐Delta (CT‐BP‐ΣΔ) architecture was
found to be the most suitable solution in the high‐IF receiver architecture since they
combine oversampling and noise shaping to get fairly high resolution in a limited
bandwidth.
A major issue in continuous‐time networks is the lack of accuracy due to powervoltage‐
temperature (PVT) tolerances that lead to over 20% pole variations compared
to their discrete‐time counterparts. An optimally tuned BP ΣΔ ADC requires correcting
for center frequency deviations, excess loop delay, and DAC coefficients. Due to these
undesirable effects, a calibration algorithm is necessary to compensate for these
variations in order to achieve high SNR requirements as technology shrinks.
In this work, a novel linearization technique for a Wideband Low‐Noise
Amplifier (LNA) targeted for a frequency range of 3‐7GHz is presented. Post‐layout
simulations show NF of 6.3dB, peak S21 of 6.1dB, and peak IIP3 of 21.3dBm,
respectively. The power consumption of the LNA is 5.8mA from 2V.
Secondly, the design of a CMOS 6th order CT BP‐ΣΔ modulator running at 800
MHz for High‐IF conversion of 10MHz bandwidth signals at 200 MHz is presented. A
novel transconductance amplifier has been developed to achieve high linearity and high
dynamic range at high frequencies. A 2‐bit quantizer with offset cancellation is alsopresented. The sixth‐order modulator is implemented using 0.18 um TSMC standard
analog CMOS technology. Post‐layout simulations in cadence demonstrate that the
modulator achieves a SNDR of 78 dB (~13 bit) performance over a 14MHz bandwidth.
The modulator’s static power consumption is 107mW from a supply power of ± 0.9V.
Finally, a calibration technique for the optimization of the Noise Transfer
Function CT BP ΣΔ modulators is presented. The proposed technique employs two test
tones applied at the input of the quantizer to evaluate the noise transfer function of
the ADC, using the capabilities of the Digital Signal Processing (DSP) platform usually
available in mixed‐mode systems. Once the ADC output bit stream is captured,
necessary information to generate the control signals to tune the ADC parameters for
best Signal‐to‐Quantization Noise Ratio (SQNR) performance is extracted via Least‐
Mean Squared (LMS) software‐based algorithm. Since the two tones are located
outside the band of interest, the proposed global calibration approach can be used
online with no significant effect on the in‐band content
High frequency and high dynamic range continuous time filters
Many modern communication systems use orthogonal frequency division
multiplexing (OFDM) and discrete multi-tone (DMT) as modulation schemes where
high data rates are transmitted over a wide frequency band in multiple orthogonal subcarriers.
Due to the many advantages, such as flexibility, good noise immunity and the
ability to be optimized for medium conditions, the use of DMT and OFDM can be found
in digital video broadcasting, local area wireless network (IEEE 802.11a), asymmetric
digital subscriber line (ADSL), very high bit rate DSL (VDSL) and power line
communications (PLC). However, a major challenge is the design of the analog frontend;
for these systems a large dynamic range is required due to the significant peak to
average ratio of the resulting signals. In receivers, very demanding high-performance
analog filters are typically used to block interferers and provide anti-aliasing before the
subsequent analog to digital conversion stage. For frequencies higher than 10MHz, Gm-C filter implementations are generally
preferred due to the more efficient operation of wide-band operational transconductance
amplifiers (OTA). Nevertheless, the inherent low-linearity of open-loop operated OTA
limits the dynamic range. In this dissertation, three different proposed OTA linearity
enhancement techniques for the design of high frequency and high dynamic range are
presented. The techniques are applied to two filter implementations: a 20MHz second
order tunable filter and a 30MHz fifth order elliptical low-pass filter. Simulation and
experimental results show a spurious free dynamic range (SFDR) of 65dB with a power
consumption of 85mW. In a figure of merit where SFDR is normalized to the power
consumption, this filter is 6dB above the trend-line of recently reported continuous time
filters
Linearization of Time-encoded ADCs Architectures for Smart MEMS Sensors in Low Power CMOS Technology
Mención Internacional en el título de doctorIn the last few years, the development of mobile technologies and machine learning
applications has increased the demand of MEMS-based digital microphones.
Mobile devices have several microphones enabling noise canceling, acoustic beamforming
and speech recognition. With the development of machine learning applications
the interest to integrate sensors with neural networks has increased.
This has driven the interest to develop digital microphones in nanometer CMOS
nodes where the microphone analog-front end and digital processing, potentially
including neural networks, is integrated on the same chip.
Traditionally, analog-to-digital converters (ADCs) in digital microphones have
been implemented using high order Sigma-Delta modulators. The most common
technique to implement these high order Sigma-Selta modulators is switchedcapacitor
CMOS circuits. Recently, to reduce power consumption and make them
more suitable for tasks that require always-on operation, such as keyword recognition,
switched-capacitor circuits have been improved using inverter-based operational
amplifier integrators. Alternatively, switched-capacitor based Sigma-
Delta modulators have been replaced by continuous time Sigma-Delta converters.
Nevertheless, in both implementations the input signal is voltage encoded
across the modulator, making the integration in smaller CMOS nodes more challenging
due to the reduced voltage supply.
An alternative technique consists on encoding the input signal on time (or
frequency) instead of voltage. This is what time-encoded converters do. Lately,
time-encoding converters have gained popularity as they are more suitable to
nanometer CMOS nodes than Sigma-Delta converters. Among the ones that have
drawn more interest we find voltage-controlled oscillator based ADCs (VCOADCs).
VCO-ADCs can be implemented using CMOS inverter based ring oscillators
(RO) and digital circuitry. They also show noise-shaping properties.
This makes them a very interesting alternative for implementation of ADCs in
nanometer CMOS nodes. Nevertheless, two main circuit impairments are present
in VCO-ADCs, and both come from the oscillator non-idealities. The first of them
is the oscillator phase noise, that reduces the resolution of the ADC. The second
is the non-linear tuning curve of the oscillator, that results in harmonic distortion
at medium to high input amplitudes.
In this thesis we analyze the use of time encoding ADCs for MEMS microphones
with special focus on ring oscillator based ADCs (RO-ADCs). Firstly, we
study the use of a dual-slope based SAR noise shaped quantizer (SAR-NSQ) in
sigma-delta loops. This quantizer adds and extra level of noise-shaping to the modulator, improving the resolution. The quantizer is explained, and equations
for the noise transfer function (NTF) of a third order sigma-delta using a second
order filter and the NSQ are presented.
Secondly, we move our attention to the topic of RO-ADCs. We present a high
dynamic range MEMS microphone 130nm CMOS chip based on an open-loop
VCO-ADC. This dissertation shows the implementation of the analog front-end
that includes the oscillator and the MEMS interface, with a focus on achieving
low power consumption with low noise and a high dynamic range. The digital
circuitry is left to be explained by the coauthor of the chip in his dissertation. The
chip achieves a 80dBA peak SNDR and 108dB dynamic range with a THD of 1.5%
at 128 dBSPL with a power consumption of 438μW.
After that, we analyze the use of a frequency-dependent-resistor (FDR) to implement
an unsampled feedback loop around the oscillator. The objective is to reduce
distortion. Additionally phase noise mitigation is achieved. A first topology
including an operational amplifier to increase the loop gain is analyzed. The design
is silicon proven in a 130 nm CMOS chip that achieves a 84 dBA peak SNDR
with an analog power consumption of 600μW. A second topology without the
operational amplifier is also analyzed. Two chips are designed with this topology.
The first chip in 130 nm CMOS is a full VCO-ADC including the frequencyto-
digital converter (F2D). This chip achieves a peak SNDR of 76.6 dBA with a
power consumption of 482μW. The second chip includes only the oscillator and
is implemented in 55nm CMOS. The peak SNDR is 78.15 dBA and the analog
power consumption is 153μW.
To finish this thesis, two circuits that use an FDR with a ring oscillator are
presented. The first is a capacity-to-digital converter (CDC). The second is a filter
made with an FDR and an oscillator intended for voice activity detection tasks
(VAD).En los últimos años, el desarrollo de las tecnologías móviles y las aplicaciones de
machine-learning han aumentado la demanda de micrófonos digitales basados
en MEMS. Los dipositivos móviles tienen varios micrófonos que permiten la cancelación
de ruido, el beamforming o conformación de haces y el reconocimiento
de voz. Con el desarrollo de aplicaciones de aprendizaje automático, el interés
por integrar sensores con redes neuronales ha aumentado. Esto ha impulsado el
interés por desarrollar micrófonos digitales en nodos CMOS nanométricos donde
el front-end analógico y el procesamiento digital del micrófono, que puede
incluir redes neuronales, está integrado en el mismo chip.
Tradicionalmente, los convertidores analógicos-digitales (ADC) en micrófonos
digitales han sido implementados utilizando moduladores Sigma-Delta de
orden elevado. La técnica más común para implementar estos moduladores Sigma-
Delta es el uso de circuitos CMOS de capacidades conmutadas. Recientemente,
para reducir el consumo de potencia y hacerlos más adecuados para las tareas que
requieren una operación continua, como el reconocimiento de palabras clave, los
convertidores Sigma-Delta de capacidades conmutadas has sido mejorados con
el uso de integradores implementados con amplificadores operacionales basados
en inversores CMOS. Alternativamente, los Sigma-Delta de capacidades conmutadas
han sido reemplazados por moduladores en tiempo continuo. No obstante,
en ambas implementaciones, la señal de entrada es codificada en voltaje durante
el proceso de conversión, lo que hace que la integración en nodos CMOS más
pequeños sea complicada debido a la menor tensión de alimentación.
Una técnica alternativa consiste en codificar la señal de entrada en tiempo (o
frecuencia) en lugar de tensión. Esto es lo que hacen los convertidores de codificación
temporal. Recientemente, los convertidores de codificación temporal
han ganado popularidad ya que son más adecuados para nodos CMOS nanométricos
que los convertidores Sigma-Delta. Entre los que más interés han despertado
encontramos los ADCs basados en osciladores controlados por tensión
(VCO-ADC). Los VCO-ADC se pueden implementar usando osciladores en anillo
(RO) implementados con inversores CMOS y circuitos digitales. Esta familia
de convertidores también tiene conformado de ruido. Esto los convierte en una
alternativa muy interesante para la implementación de convertidores en nodos
CMOS nanométricos. Sin embargo, dos problemas principales están presentes en
este tipo de ADCs debidos ambos a las no idealidades del oscilador. El primero
de los problemas es la presencia de ruido de fase en el oscilador, lo que reduce la resolución del ADC. El segundo es la curva de conversion voltaje-frecuencia no
lineal del oscilador, lo que causa distorsión a amplitudes medias y altas.
En esta tesis analizamos el uso de ADCs de codificación temporal para micrófonos
MEMS, con especial interés en ADCS basados en osciladores de anillo
(RO-ADC). En primer lugar, estudiamos el uso de un cuantificador SAR con conformado
de ruido (SAR-NSQ) en moduladores Sigma-Delta. Este cuantificador
agrega un orden adicional de conformado de ruido al modulador, mejorando la
resolución. En este documento se explica el cuantificador y obtienen las ecuaciones
para la función de transferencia de ruido (NTF) de un sigma-delta de tercer
orden usando un filtro de segundo orden y el NSQ.
En segundo lugar, dirigimos nuestra atención al tema de los RO-ADC. Presentamos
el chip de un micrófono MEMS de alto rango dinámico en CMOS de
130 nm basado en un VCO-ADC de bucle abierto. En esta tesis se explica la implementación
del front-end analógico que incluye el oscilador y la interfaz con
el MEMS. Esta implementación se ha llevado a cabo con el objetivo de lograr un
bajo consumo de potencia, un bajo nivel de ruido y un alto rango dinámico. La
descripción del back-end digital se deja para la tesis del couator del chip. La
SNDR de pico del chip es de 80dBA y el rango dinámico de 108dB con una THD
de 1,5% a 128 dBSPL y un consumo de potencia de 438μW.
Finalmente, se analiza el uso de una resistencia dependiente de frecuencia
(FDR) para implementar un bucle de realimentación no muestreado alrededor
del oscilador. El objetivo es reducir la distorsión. Además, también se logra la
mitigación del ruido de fase del oscilador. Se analyza una primera topologia de
realimentación incluyendo un amplificador operacional para incrementar la ganancia
de bucle. Este diseño se prueba en silicio en un chip CMOS de 130nm que
logra un pico de SNDR de 84 dBA con un consumo de potencia de 600μW en la
parte analógica. Seguidamente, se analiza una segunda topología sin el amplificador
operacional. Se fabrican y miden dos chips diseñados con esta topologia.
El primero de ellos en CMOS de 130 nm es un VCO-ADC completo que incluye
el convertidor de frecuencia a digital (F2D). Este chip alcanza un pico SNDR de
76,6 dBA con un consumo de potencia de 482μW. El segundo incluye solo el oscilador
y está implementado en CMOS de 55nm. El pico SNDR es 78.15 dBA y el
el consumo de potencia analógica es de 153μW.
Para cerrar esta tesis, se presentan dos circuitos que usan la FDR con un oscilador
en anillo. El primero es un convertidor de capacidad a digital (CDC). El
segundo es un filtro realizado con una FDR y un oscilador, enfocado a tareas de
detección de voz (VAD).Programa de Doctorado en Ingeniería Eléctrica, Electrónica y Automática por la Universidad Carlos III de MadridPresidente: Antonio Jesús Torralba Silgado.- Secretaria: María Luisa López Vallejo.- Vocal: Pieter Rombout
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Architectures and Circuit Techniques for High-Performance Field-Programmable CMOS Software Defined Radios
Next-generation wireless communication systems put more stringent performance requirements on the wireless RF receiver circuits. Sensitivity, linearity, bandwidth and power consumption are some of the most important specifications that often face tightly coupled tradeoffs between them. To increase the data throughput, a large number of fragmented spectrums are being introduced to the wireless communication standards. Carrier aggregation technology needs concurrent communication across several non-contiguous frequency bands, which results in a rapidly growing number of band combinations. Supporting all the frequency bands and their aggregation combinations increases the complexity of the RF receivers. Highly flexible software defined radio (SDR) is a promising technology to address these applications scenarios with lower complexity by relaxing the specifications of the RF filters or eliminating them. However, there are still many technology challenges with both the receiver architecture and the circuit implementations. The performance requirements of the receivers can also vary across different application scenario and RF environments. Field-programmable dynamic performance tradeoff can potentially reduce the power consumption of the receiver.
In this dissertation, we address the performance enhancement challenges in the wideband SDRs by innovations at both the circuit building block level and the receiver architecture level. A series of research projects are conducted to push the state-of-the-art performance envelope and add features such as field-programmable performance tradeoff and concurrent reception. The projects originate from the concept of thermal noise canceling techniques and further enhance the RF performance and add features for more capable SDR receivers. Four generations of prototype LNA or receiver chips are designed, and each of them pushes at least one aspect of the RF performance such as bandwidth, linearity, and NF.
A noise-canceling distributed LNA breaks the tradeoff between NF and RF bandwidth by introducing microwave circuit techniques from the distributed amplifiers. The LNA architecture uniquely provides ultra high bandwidth and low NF at low frequencies. A family of field-programmable LNA realized field-programmable performance tradeoff with current-reuse programmable transconductance cells. Interferer-reflecting loops can be applied around the LNAs to improve their input linearity by rejecting the out-of-band interferers with a wideband low in- put impedance. A low noise transconductance amplifier (LNTA) that operates in class-AB-C is invented to can handle rail-to-rail out-of-band blocker without saturation. Class-AB and class-C transconductors form a composite amplifier to increase the linear range of the input voltage. A new antenna interface named frequency-translational quadrature-hybrid (FTQH) breaks the input impedance matching requirement of the LNAs by introducing quadrature hybrid couplers to the CMOS RFIC design. The FTQH receiver achieves wideband sub-1dB NF and supports scalable massive frequency-agile concurrent reception
Low power architecture and circuit techniques for high boost wideband Gm-C filters
With the current trend towards integration and higher data rates, read channel
design needs to incorporate significant boost for a wider signal bandwidth. This
dissertation explores the analog design problems associated with design of such
'Equalizing Filter' (boost filter) for read channel applications.
Specifically, a 330MHz, 5th order Gm-C continuous time lowpass filter with
24dB boost is designed. Existing architectures are found to be unsuitable for low power,
wideband and high boost operation. The proposed solution realizes boosting zeros by
efficiently combining available transfer functions associated with all nodes of cascaded
biquad cells. Further, circuit techniques suitable for high frequency filter design are
elaborated such as: application of the Gilbert cell as a variable transconductor and a new
Common-Mode-Feedback (CMFB) error amplifier that improves common mode
accuracy without compromising on bandwidth or circuit complexity. A prototype is
fabricated in a standard 0.35mm CMOS process. Experimental results show -41dB of
IM3 for 250mV peak to peak swing with 8.6mW/pole of power dissipation
Ultra Low Power Amplification and Digitization System for Neural Signal Recording Applications
The scope is to develop a tunable low power fully integrated bandpass filter and a low power second order sigma-delta ADC modulator for implantable neural signal amplification and digitization applications, with subthreshold circuit design techniques in different CMOS processes. Since biopotentials usually contain low frequency components, the neural filters in this project have to be able to achieve large and predictable time constant for implantable applications. Voltage biased pseudo-resistors are vulnerable to process variations and circuit imperfections, and hence not suitable for implantable applications. A current biased pseudo-resistor is implemented in the neural filters in this work to set the cutoff frequency, and a Taylor series is used to study its linearity. The filters with proposed current biased pseudo-resistors were fabricated in two different CMOS processes and tested. The test results verify that the filters with current biased pseudo-resistors are tunable, and not vulnerable to process variations and circuit imperfections. The filters with current biased pseudo-resistors meet the design requirements of fully integrated, implantable applications. The sigma-delta ADC modulator was designed and simulated in a half micron SOS CMOS process. The simulation results of the ADC confirm the possibility of an ultra low power ADC for neural signal recording applications.School of Electrical & Computer Engineerin