Analysis of design strategies for RF ESD problems in CMOS circuits

This thesis analyses the design strategies used to protect RF circuits that are implemented in CMOS technologies. It investigates, in detail, the physical mechanisms involved when a ggNMOS structure is exposed to an ESD event and undergoes snapback. The understanding gained is used to understand why the performance of the current RF ESD clamp is poor and suggestions are made as to how the performance of ggNMOS clamps can be improved beyond the current body of knowledge. The ultimate aim is to be able to design effective ESD protection clamps whilst minimising the effect the circuit has on RF I/O signals. A current ggNMOS based RF ESD I/O protection circuit is analysed in detail using a Transmission Line Pulse (TLP) tester. This is shown to be a very effective diagnostic tool by showing many characteristics of the ggNMOS during the triggering and conducting phase of the ESD event and demonstrate deficiencies in the clamp design. The use of a FIB enhances the analysis by allowing the isolation of individual components in the circuit and therefore their analysis using the TLP tester. SPICE simulations are used to provide further commentary on the debate surrounding the specification required of a TLP tester for there to be a good correlation between a TLP test and the industry standard Human Body Model (HBM) ESD test. Finite element simulations are used to probe deeper in to the mechanisms involved when a ggNMOS undergoes snapback especially with regard to the contribution parasitic components within the ggNMOS make to the snapback process. New ggNMOS clamps are proposed which after some modification are shown to work. Some of the finite element experiments are repeated in a 0.18μπ7. process CMOS test chip and a comparison is made between the two sets of results. In the concluding chapter understanding that has been gained from previous chapters is combined with the published body of knowledge to suggest and explain improvements in the design of a ggNMOS for RF and standard applications. These improvements will improve homogeneity of ggNMOS operation thus allowing the device size to be reduced and parasitic loading for a given ESD performance. These techniques can also be used to ensure that the ESD current does not take an unintended path through the chip

Miniaturized Transistors

What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications

Modeling of reverse current effects in trench-based smart power technologies

The increase in complexity in todays automotive products is driven by the trend to implement new features in the area of safety, comfort and entertainment. This significantly raises the safety requirements of new ICs and the identification of possible sources of failures gains in priority. One of these failure sources is the injection of parasitic currents into the common substrate of a chip. This does not only occur during exceptions in the operation of the IC but also affects applications which require switching of inductive loads. The difficulty to handle substrate current injection originates from its nonlocality as it potentially influences the entire IC. In this thesis a point-to-point modeling scheme for Spice-based circuit simulation is proposed. It addresses parasitic coupling effects caused by minority carrier injection into the substrate of a deep-trench based BCD technology. Since minority carriers can diffuse over large distances in the common substrate and disturb circuits in their normal operation, a quantitative approach is necessary to address this parasitic effect early during design. An equivalent circuit based on the chip's design is extracted and the coupling effect between the perturbing devices and the susceptible nodes is represented by Verilog-AMS models. These models represent the three main components in the coupling path which are the forward biased diode at the perturbing device, the reverse biased diode at the susceptible node, and the intermediary common substrate of the chip. An automated layout extraction framework identifies the injectors of the minority carriers and the sensitive devices. Additionally, it determines the relevant parameters for the models. The curve fitting functions of the models are derived from calibrated TCAD simulations which are based on the measurement results of two dedicated test chips. The test chips were specifically designed to provide detailed analysis capabilities of this parasitic coupling effect. This led to a design which contains several different injector nodes and a large number of susceptible nodes spread over the entire area of the chip. Additionally, the chip incorporates the most commonly used layout-based guard structures to obtain an in-depth insight on their efficiency in recent BCD technologies. Based on the results obtained by measurements of the test chips the underlying physics of the coupling effect are discussed in detail. Minority carrier injection in the substrate is not much different to the operating principle of a bipolar transistor and the differences and similarities between them are presented. This forms the basis of the model development and explains how the equations of the Verilog-AMS models were derived. Finally, the entire simulation flow is evaluated and the simulation results are compared to measurements of the chip

Avionics system design for high energy fields: A guide for the designer and airworthiness specialist

Because of the significant differences in transient susceptibility, the use of digital electronics in flight critical systems, and the reduced shielding effects of composite materials, there is a definite need to define pracitices which will minimize electromagnetic susceptibility, to investigate the operational environment, and to develop appropriate testing methods for flight critical systems. The design practices which will lead to reduced electromagnetic susceptibility of avionics systems in high energy fields is described. The levels of emission that can be anticipated from generic digital devices. It is assumed that as data processing equipment becomes an ever larger part of the avionics package, the construction methods of the data processing industry will increasingly carry over into aircraft. In Appendix 1 tentative revisions to RTCA DO-160B, Environmental Conditions and Test Procedures for Airborne Equipment, are presented. These revisions are intended to safeguard flight critical systems from the effects of high energy electromagnetic fields. A very extensive and useful bibliography on both electromagnetic compatibility and avionics issues is included

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

NASA Space Engineering Research Center Symposium on VLSI Design

The NASA Space Engineering Research Center (SERC) is proud to offer, at its second symposium on VLSI design, presentations by an outstanding set of individuals from national laboratories and the electronics industry. These featured speakers share insights into next generation advances that will serve as a basis for future VLSI design. Questions of reliability in the space environment along with new directions in CAD and design are addressed by the featured speakers

Advances in Integrated Circuits and Systems for Wearable Biomedical Electrical Impedance Tomography

Electrical impedance tomography (EIT) is an impedance mapping technique that can be used to image the inner impedance distribution of the subject under test. It is non-invasive, inexpensive and radiation-free, while at the same time it can facilitate long-term and real-time dynamic monitoring. Thus, EIT lends itself particularly well to the development of a bio-signal monitoring/imaging system in the form of wearable technology. This work focuses on EIT system hardware advancement using complementary metal oxide semiconductor (CMOS) technology. It presents the design and testing of application specific integrated circuit (ASIC) and their successful use in two bio-medical applications, namely, neonatal lung function monitoring and human-machine interface (HMI) for prosthetic hand control. Each year fifteen million babies are born prematurely, and up to 30% suffer from lung disease. Although respiratory support, especially mechanical ventilation, can improve their survival, it also can cause injury to their vulnerable lungs resulting in severe and chronic pulmonary morbidity lasting into adulthood, thus an integrated wearable EIT system for neonatal lung function monitoring is urgently needed. In this work, two wearable belt systems are presented. The first belt features a miniaturized active electrode module built around an analog front-end ASIC which is fabricated with 0.35-µm high-voltage process technology with ±9 V power supplies and occupies a total die area of 3.9 mm². The ASIC offers a high power active current driver capable of up to 6 mAp-p output, and wideband active buffer for EIT recording as well as contact impedance monitoring. The belt has a bandwidth of 500 kHz, and an image frame rate of 107 frame/s. To further improve the system, the active electrode module is integrated into one ASIC. It contains a fully differential current driver, a current feedback instrumentation amplifier (IA), a digital controller and multiplexors with a total die area of 9.6 mm². Compared to the conventional active electrode architecture employed in the first EIT belt, the second belt features a new architecture. It allows programmable flexible electrode current drive and voltage sense patterns under simple digital control. It has intimate connections to the electrodes for the current drive and to the IA for direct differential voltage measurement providing superior common-mode rejection ratio (CMRR) up to 74 dB, and with active gain, the noise level can be reduced by a factor of √3 using the adjacent scan. The second belt has a wider operating bandwidth of 1 MHz and multi-frequency operation. The image frame rate is 122 frame/s, the fastest wearable EIT reported to date. It measures impedance with 98% accuracy and has less than 0.5 Ω and 1° variation across all channels. In addition the ASIC facilitates several other functionalities to provide supplementary clinical information at the bedside. With the advancement of technology and the ever-increasing fusion of computer and machine into daily life, a seamless HMI system that can recognize hand gestures and motions and allow the control of robotic machines or prostheses to perform dexterous tasks, is a target of research. Originally developed as an imaging technique, EIT can be used with a machine learning technique to track bones and muscles movement towards understanding the human user’s intentions and ultimately controlling prosthetic hand applications. For this application, an analog front-end ASIC is designed using 0.35-µm standard process technology with ±1.65 V power supplies. It comprises a current driver capable of differential drive and a low noise (9μVrms) IA with a CMRR of 80 dB. The function modules occupy an area of 0.07 mm². Using the ASIC, a complete HMI system based on the EIT principle for hand prosthesis control has been presented, and the user’s forearm inner bio-impedance redistribution is assessed. Using artificial neural networks, bio-impedance redistribution can be learned so as to recognise the user’s intention in real-time for prosthesis operation. In this work, eleven hand motions are designed for prosthesis operation. Experiments with five subjects show that the system can achieve an overall recognition accuracy of 95.8%

Technology for the Future: In-Space Technology Experiments Program, part 2

The purpose of the Office of Aeronautics and Space Technology (OAST) In-Space Technology Experiments Program In-STEP 1988 Workshop was to identify and prioritize technologies that are critical for future national space programs and require validation in the space environment, and review current NASA (In-Reach) and industry/ university (Out-Reach) experiments. A prioritized list of the critical technology needs was developed for the following eight disciplines: structures; environmental effects; power systems and thermal management; fluid management and propulsion systems; automation and robotics; sensors and information systems; in-space systems; and humans in space. This is part two of two parts and contains the critical technology presentations for the eight theme elements and a summary listing of critical space technology needs for each theme

Advanced sensors technology survey

This project assesses the state-of-the-art in advanced or 'smart' sensors technology for NASA Life Sciences research applications with an emphasis on those sensors with potential applications on the space station freedom (SSF). The objectives are: (1) to conduct literature reviews on relevant advanced sensor technology; (2) to interview various scientists and engineers in industry, academia, and government who are knowledgeable on this topic; (3) to provide viewpoints and opinions regarding the potential applications of this technology on the SSF; and (4) to provide summary charts of relevant technologies and centers where these technologies are being developed