Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells

The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors. The use of new production processes introduces a set of parasitic effects that gain more and more importance with the scaling down of the technology. In particular, even small variations of parasitic capacitances in CMOS devices are expected to become an additional source of faulty behaviors in future technologies. This paper analyzes and compares the effect of parasitic capacitance variations in a SRAM memory circuit realized with 65 nm and 32 nm predictive technology model

March CRF: an Efficient Test for Complex Read Faults in SRAM Memories

In this paper we study Complex Read Faults in SRAMs, a combination of various malfunctions that affect the read operation in nanoscale memories. All the memory elements involved in the read operation are studied, underlining the causes of the realistic faults concerning this operation. The requirements to cover these fault models are given. We show that the different causes of read failure are independent and may coexist in nanoscale SRAMs, summing their effects and provoking Complex Read Faults, CRFs. We show that the test methodology to cover this new read faults consists in test patterns that match the requirements to cover all the different simple read fault models. We propose a low complexity (?2N) test, March CRF, that covers effectively all the realistic Complex Read Fault

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis

IC design for reliability

textAs the feature size of integrated circuits goes down to the nanometer scale, transient and permanent reliability issues are becoming a significant concern for circuit designers. Traditionally, the reliability issues were mostly handled at the device level as a device engineering problem. However, the increasing severity of reliability challenges and higher error rates due to transient upsets favor higher-level design for reliability (DFR). In this work, we develop several methods for DFR at the circuit level. A major source of transient errors is the single event upset (SEU). SEUs are caused by high-energy particles present in the cosmic rays or emitted by radioactive contaminants in the chip packaging materials. When these particles hit a N+/P+ depletion region of an MOS transistor, they may generate a temporary logic fault. Depending on where the MOS transistor is located and what state the circuit is at, an SEU may result in a circuit-level error. We analyze SEUs both in combinational logic and memories (SRAM). For combinational logic circuit, we propose FASER, a Fast Analysis tool of Soft ERror susceptibility for cell-based designs. The efficiency of FASER is achieved through its static and vector-less nature. In order to evaluate the impact of SEU on SRAM, a theory for estimating dynamic noise margins is developed analytically. The results allow predicting the transient error susceptibility of an SRAM cell using a closedform expression. Among the many permanent failure mechanisms that include time-dependent oxide breakdown (TDDB), electro-migration (EM), hot carrier effect (HCE), and negative bias temperature instability (NBTI), NBTI has recently become important. Therefore, the main focus of our work is NBTI. NBTI occurs when the gate of PMOS is negatively biased. The voltage stress across the gate generates interface traps, which degrade the threshold voltage of PMOS. The degraded PMOS may eventually fail to meet timing requirement and cause functional errors. NBTI becomes severe at elevated temperatures. In this dissertation, we propose a NBTI degradation model that takes into account the temperature variation on the chip and gives the accurate estimation of the degraded threshold voltage. In order to account for the degradation of devices, traditional design methods add guard-bands to ensure that the circuit will function properly during its lifetime. However, the worst-case based guard-bands lead to significant penalty in performance. In this dissertation, we propose an effective macromodel-based reliability tracking and management framework, based on a hybrid network of on-chip sensors, consisting of temperature sensors and ring oscillators. The model is concerned specifically with NBTIinduced transistor aging. The key feature of our work, in contrast to the traditional tracking techniques that rely solely on direct measurement of the increase of threshold voltage or circuit delay, is an explicit macromodel which maps operating temperature to circuit degradation (the increase of circuit delay). The macromodel allows for costeffective tracking of reliability using temperature sensors and is also essential for enabling the control loop of the reliability management system. The developed methods improve the over-conservatism of the device-level, worstcase reliability estimation techniques. As the severity of reliability challenges continue to grow with technology scaling, it will become more important for circuit designers/CAD tools to be equipped with the developed methods.Electrical and Computer Engineerin

Digital design techniques for dependable High-Performance Computing

L'abstract è presente nell'allegato / the abstract is in the attachmen

Analysis and Test of the Effects of Single Event Upsets Affecting the Configuration Memory of SRAM-based FPGAs

SRAM-based FPGAs are increasingly relevant in a growing number of safety-critical application fields, ranging from automotive to aerospace. These application fields are characterized by a harsh radiation environment that can cause the occurrence of Single Event Upsets (SEUs) in digital devices. These faults have particularly adverse effects on SRAM-based FPGA systems because not only can they temporarily affect the behaviour of the system by changing the contents of flip-flops or memories, but they can also permanently change the functionality implemented by the system itself, by changing the content of the configuration memory. Designing safety-critical applications requires accurate methodologies to evaluate the system’s sensitivity to SEUs as early as possible during the design process. Moreover it is necessary to detect the occurrence of SEUs during the system life-time. To this purpose test patterns should be generated during the design process, and then applied to the inputs of the system during its operation. In this thesis we propose a set of software tools that could be used by designers of SRAM-based FPGA safety-critical applications to assess the sensitivity to SEUs of the system and to generate test patterns for in-service testing. The main feature of these tools is that they implement a model of SEUs affecting the configuration bits controlling the logic and routing resources of an FPGA device that has been demonstrated to be much more accurate than the classical stuck-at and open/short models, that are commonly used in the analysis of faults in digital devices. By keeping this accurate fault model into account, the proposed tools are more accurate than similar academic and commercial tools today available for the analysis of faults in digital circuits, that do not take into account the features of the FPGA technology.. In particular three tools have been designed and developed: (i) ASSESS: Accurate Simulator of SEuS affecting the configuration memory of SRAM-based FPGAs, a simulator of SEUs affecting the configuration memory of an SRAM-based FPGA system for the early assessment of the sensitivity to SEUs; (ii) UA2TPG: Untestability Analyzer and Automatic Test Pattern Generator for SEUs Affecting the Configuration Memory of SRAM-based FPGAs, a static analysis tool for the identification of the untestable SEUs and for the automatic generation of test patterns for in-service testing of the 100% of the testable SEUs; and (iii) GABES: Genetic Algorithm Based Environment for SEU Testing in SRAM-FPGAs, a Genetic Algorithm-based Environment for the generation of an optimized set of test patterns for in-service testing of SEUs. The proposed tools have been applied to some circuits from the ITC’99 benchmark. The results obtained from these experiments have been compared with results obtained by similar experiments in which we considered the stuck-at fault model, instead of the more accurate model for SEUs. From the comparison of these experiments we have been able to verify that the proposed software tools are actually more accurate than similar tools today available. In particular the comparison between results obtained using ASSESS with those obtained by fault injection has shown that the proposed fault simulator has an average error of 0:1% and a maximum error of 0:5%, while using a stuck-at fault simulator the average error with respect of the fault injection experiment has been 15:1% with a maximum error of 56:2%. Similarly the comparison between the results obtained using UA2TPG for the accurate SEU model, with the results obtained for stuck-at faults has shown an average difference of untestability of 7:9% with a maximum of 37:4%. Finally the comparison between fault coverages obtained by test patterns generated for the accurate model of SEUs and the fault coverages obtained by test pattern designed for stuck-at faults, shows that the former detect the 100% of the testable faults, while the latter reach an average fault coverage of 78:9%, with a minimum of 54% and a maximum of 93:16%

Techniques for Improving Security and Trustworthiness of Integrated Circuits

The integrated circuit (IC) development process is becoming increasingly vulnerable to malicious activities because untrusted parties could be involved in this IC development flow. There are four typical problems that impact the security and trustworthiness of ICs used in military, financial, transportation, or other critical systems: (i) Malicious inclusions and alterations, known as hardware Trojans, can be inserted into a design by modifying the design during GDSII development and fabrication. Hardware Trojans in ICs may cause malfunctions, lower the reliability of ICs, leak confidential information to adversaries or even destroy the system under specifically designed conditions. (ii) The number of circuit-related counterfeiting incidents reported by component manufacturers has increased significantly over the past few years with recycled ICs contributing the largest percentage of the total reported counterfeiting incidents. Since these recycled ICs have been used in the field before, the performance and reliability of such ICs has been degraded by aging effects and harsh recycling process. (iii) Reverse engineering (RE) is process of extracting a circuit’s gate-level netlist, and/or inferring its functionality. The RE causes threats to the design because attackers can steal and pirate a design (IP piracy), identify the device technology, or facilitate other hardware attacks. (iv) Traditional tools for uniquely identifying devices are vulnerable to non-invasive or invasive physical attacks. Securing the ID/key is of utmost importance since leakage of even a single device ID/key could be exploited by an adversary to hack other devices or produce pirated devices. In this work, we have developed a series of design and test methodologies to deal with these four challenging issues and thus enhance the security, trustworthiness and reliability of ICs. The techniques proposed in this thesis include: a path delay fingerprinting technique for detection of hardware Trojans, recycled ICs, and other types counterfeit ICs including remarked, overproduced, and cloned ICs with their unique identifiers; a Built-In Self-Authentication (BISA) technique to prevent hardware Trojan insertions by untrusted fabrication facilities; an efficient and secure split manufacturing via Obfuscated Built-In Self-Authentication (OBISA) technique to prevent reverse engineering by untrusted fabrication facilities; and a novel bit selection approach for obtaining the most reliable bits for SRAM-based physical unclonable function (PUF) across environmental conditions and silicon aging effects