Defect Induced Aging and Breakdown in High-k Dielectrics

abstract: High-k dielectrics have been employed in the metal-oxide semiconductor field effect transistors (MOSFETs) since 45 nm technology node. In this MOSFET industry, Moore’s law projects the feature size of MOSFET scales half within every 18 months. Such scaling down theory has not only led to the physical limit of manufacturing but also raised the reliability issues in MOSFETs. After the incorporation of HfO2 based high-k dielectrics, the stacked oxides based gate insulator is facing rather challenging reliability issues due to the vulnerable HfO2 layer, ultra-thin interfacial SiO2 layer, and even messy interface between SiO2 and HfO2. Bias temperature instabilities (BTI), hot channel electrons injections (HCI), stress-induced leakage current (SILC), and time dependent dielectric breakdown (TDDB) are the four most prominent reliability challenges impacting the lifetime of the chips under use. In order to fully understand the origins that could potentially challenge the reliability of the MOSFETs the defects induced aging and breakdown of the high-k dielectrics have been profoundly investigated here. BTI aging has been investigated to be related to charging effects from the bulk oxide traps and generations of Si-H bonds related interface traps. CVS and RVS induced dielectric breakdown studies have been performed and investigated. The breakdown process is regarded to be related to oxygen vacancies generations triggered by hot hole injections from anode. Post breakdown conduction study in the RRAM devices have shown irreversible characteristics of the dielectrics, although the resistance could be switched into high resistance state.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Nouvelles Architectures Hybrides (Logique / Mémoires Non-Volatiles et technologies associées.)

Les nouvelles approches de technologies mémoires permettront une intégration dite back-end, où les cellules élémentaires de stockage seront fabriquées lors des dernières étapes de réalisation à grande échelle du circuit. Ces approches innovantes sont souvent basées sur l'utilisation de matériaux actifs présentant deux états de résistance distincts. Le passage d'un état à l'autre est contrôlé en courant ou en tension donnant lieu à une caractéristique I-V hystérétique. Nos mémoires résistives sont composées d'argent en métal électrochimiquement actif et de sulfure amorphe agissant comme électrolyte. Leur fonctionnement repose sur la formation réversible et la dissolution d'un filament conducteur. Le potentiel d'application de ces nouveaux dispositifs n'est pas limité aux mémoires ultra-haute densité mais aussi aux circuits embarqués. En empilant ces mémoires dans la troisième dimension au niveau des interconnections des circuits logiques CMOS, de nouvelles architectures hybrides et innovantes deviennent possibles. Il serait alors envisageable d'exploiter un fonctionnement à basse énergie, à haute vitesse d'écriture/lecture et de haute performance telles que l'endurance et la rétention. Dans cette thèse, en se concentrant sur les aspects de la technologie de mémoire en vue de développer de nouvelles architectures, l'introduction d'une fonctionnalité non-volatile au niveau logique est démontrée par trois circuits hybrides: commutateurs de routage non volatiles dans un Field Programmable Gate Arrays, un 6T-SRAM non volatile, et les neurones stochastiques pour un réseau neuronal. Pour améliorer les solutions existantes, les limitations de la performances des dispositifs mémoires sont identifiés et résolus avec des nouveaux empilements ou en fournissant des défauts de circuits tolérants.Novel approaches in the field of memory technology should enable backend integration, where individual storage nodes will be fabricated during the last fabrication steps of the VLSI circuit. In this case, memory operation is often based upon the use of active materials with resistive switching properties. A topology of resistive memory consists of silver as electrochemically active metal and amorphous sulfide acting as electrolyte and relies on the reversible formation and dissolution of a conductive filament. The application potential of these new memories is not limited to stand-alone (ultra-high density), but is also suitable for embedded applications. By stacking these memories in the third dimension at the interconnection level of CMOS logic, new ultra-scalable hybrid architectures becomes possible which exploit low energy operation, fast write/read access and high performance with respect to endurance and retention. In this thesis, focusing on memory technology aspects in view of developing new architectures, the introduction of non-volatile functionality at the logic level is demonstrated through three hybrid (CMOS logic ReRAM devices) circuits: nonvolatile routing switches in a Field Programmable Gate Array, nonvolatile 6T-SRAMs, and stochastic neurons of an hardware neural network. To be competitive or even improve existing solutions, limitations on the memory devices performances are identified and solved by stack engineering of CBRAM devices or providing faults tolerant circuits.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

Adaptive Intelligent Systems for Extreme Environments

As embedded processors become powerful, a growing number of embedded systems equipped with artificial intelligence (AI) algorithms have been used in radiation environments to perform routine tasks to reduce radiation risk for human workers. On the one hand, because of the low price, commercial-off-the-shelf devices and components are becoming increasingly popular to make such tasks more affordable. Meanwhile, it also presents new challenges to improve radiation tolerance, the capability to conduct multiple AI tasks and deliver the power efficiency of the embedded systems in harsh environments. There are three aspects of research work that have been completed in this thesis: 1) a fast simulation method for analysis of single event effect (SEE) in integrated circuits, 2) a self-refresh scheme to detect and correct bit-flips in random access memory (RAM), and 3) a hardware AI system with dynamic hardware accelerators and AI models for increasing flexibility and efficiency. The variances of the physical parameters in practical implementation, such as the nature of the particle, linear energy transfer and circuit characteristics, may have a large impact on the final simulation accuracy, which will significantly increase the complexity and cost in the workflow of the transistor level simulation for large-scale circuits. It makes it difficult to conduct SEE simulations for large-scale circuits. Therefore, in the first research work, a new SEE simulation scheme is proposed, to offer a fast and cost-efficient method to evaluate and compare the performance of large-scale circuits which subject to the effects of radiation particles. The advantages of transistor and hardware description language (HDL) simulations are combined here to produce accurate SEE digital error models for rapid error analysis in large-scale circuits. Under the proposed scheme, time-consuming back-end steps are skipped. The SEE analysis for large-scale circuits can be completed in just few hours. In high-radiation environments, bit-flips in RAMs can not only occur but may also be accumulated. However, the typical error mitigation methods can not handle high error rates with low hardware costs. In the second work, an adaptive scheme combined with correcting codes and refreshing techniques is proposed, to correct errors and mitigate error accumulation in extreme radiation environments. This scheme is proposed to continuously refresh the data in RAMs so that errors can not be accumulated. Furthermore, because the proposed design can share the same ports with the user module without changing the timing sequence, it thus can be easily applied to the system where the hardware modules are designed with fixed reading and writing latency. It is a challenge to implement intelligent systems with constrained hardware resources. In the third work, an adaptive hardware resource management system for multiple AI tasks in harsh environments was designed. Inspired by the “refreshing” concept in the second work, we utilise a key feature of FPGAs, partial reconfiguration, to improve the reliability and efficiency of the AI system. More importantly, this feature provides the capability to manage the hardware resources for deep learning acceleration. In the proposed design, the on-chip hardware resources are dynamically managed to improve the flexibility, performance and power efficiency of deep learning inference systems. The deep learning units provided by Xilinx are used to perform multiple AI tasks simultaneously, and the experiments show significant improvements in power efficiency for a wide range of scenarios with different workloads. To further improve the performance of the system, the concept of reconfiguration was further extended. As a result, an adaptive DL software framework was designed. This framework can provide a significant level of adaptability support for various deep learning algorithms on an FPGA-based edge computing platform. To meet the specific accuracy and latency requirements derived from the running applications and operating environments, the platform may dynamically update hardware and software (e.g., processing pipelines) to achieve better cost, power, and processing efficiency compared to the static system

Neuromorphic Computing with Resistive Switching Devices.

Resistive switches, commonly referred to as resistive memory (RRAM) devices and modeled as memristors, are an emerging nanoscale technology that can revolutionize data storage and computing approaches. Enabled by the advancement of nanoscale semiconductor fabrication and detailed understanding of the physical and chemical processes occurring at the atomic scale, resistive switches offer high speed, low-power, and extremely dense nonvolatile data storage. Further, the analog capabilities of resistive switching devices enables neuromorphic computing approaches which can achieve massively parallel computation with a power and area budget that is orders of magnitude lower than today’s conventional, digital approaches. This dissertation presents the investigation of tungsten oxide based resistive switching devices for use in neuromorphic computing applications. Device structure, fabrication, and integration are described and physical models are developed to describe the behavior of the devices. These models are used to develop array-scale simulations in support of neuromorphic computing approaches. Several signal processing algorithms are adapted for acceleration using arrays of resistive switches. Both simulation and experimental results are reported. Finally, guiding principles and proposals for future work are discussed.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/116743/1/sheridp_1.pd

Resistive-RAM for Data Storage Applications.

Mainstream non-volatile memory technology, dominated by the floating gate transistor, has historically improved in density, performance and cost primarily by means of process scaling. This simple geometrical scaling now faces significant challenges due to constraints of electrostatics and reliability. Thus, novel non-transistor based memory paradigms are being widely explored. Among the various contenders for next generation storage technology, RRAM devices have got immense attention due to their high-speed, multilevel capability, scalability, simple structure, low voltage operation and high endurance. In this thesis, electrical and material characterization is carried out on a MIM device system and formation / annihilation of nanoscale filaments is shown to be the reason behind the resistance switching. The MIM system is optimized to include an in-cell resistor which is shown to improve device endurance and reduce stuck-at-one faults. For highest density, the devices were arranged in a crossbar geometry and vertically integrated on CMOS decoders to demonstrate the feasibility of practical data storage applications. Next, we show that these binary RRAM devices exhibit native stochastic nature of resistive switching. Even for a fixed voltage on the same device, the wait time associated with programming is not fixed and is random and broadly distributed. However, the probability of switching can be predicted and controlled by the programming pulse. These binary devices have been used to generate random bit-streams with predicable bias ratios in time and space domains. The ability to produce random bit-streams using binary resistive switching devices based on the native stochastic switching principle may potentially lead to novel non-von-Neumann computing paradigms. Further, sub-1nA operating current devices have been developed. This ultra-low current provides energy savings by minimizing programming, erase and read currents. Despite having such low currents, excellent retention, on/off ratio and endurance have been demonstrated. Finally a scalable approach to simple 3D stacking is discussed. By implementation of a vertical sidewall-based architecture, the number of critical lithography steps can be reduced. A vertical device structure based on a W / WOx / Pd material system is developed. This scalable architecture is well suited for development of analog memory and neuromorphic systems.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/110461/1/sidgaba_1.pd

Circuit Design, Architecture and CAD for RRAM-based FPGAs

Field Programmable Gate Arrays (FPGAs) have been indispensable components of embedded systems and datacenter infrastructures. However, energy efficiency of FPGAs has become a hard barrier preventing their expansion to more application contexts, due to two physical limitations: (1) The massive usage of routing multiplexers causes delay and power overheads as compared to ASICs. To reduce their power consumption, FPGAs have to operate at low supply voltage but sacrifice performance because the transistors drive degrade when working voltage decreases. (2) Using volatile memory technology forces FPGAs to lose configurations when powered off and to be reconfigured at each power on. Resistive Random Access Memories (RRAMs) have strong potentials in overcoming the physical limitations of conventional FPGAs. First of all, RRAMs grant FPGAs non-volatility, enabling FPGAs to be "Normally powered off, Instantly powered on". Second, by combining functionality of memory and pass-gate logic in one unique device, RRAMs can greatly reduce area and delay of routing elements. Third, when RRAMs are embedded into datpaths, the performance of circuits can be independent from their working voltage, beyond the limitations of CMOS circuits. However, researches and development of RRAM-based FPGAs are in their infancy. Most of area and performance predictions were achieved without solid circuit-level simulations and sophisticated Computer Aided Design (CAD) tools, causing the predicted improvements to be less convincing. In this thesis,we present high-performance and low-power RRAM-based FPGAs fromtransistorlevel circuit designs to architecture-level optimizations and CAD tools, using theoretical analysis, industrial electrical simulators and novel CAD tools. We believe that this is the first systematic study in the field, covering: From a circuit design perspective, we propose efficient RRAM-based programming circuits and routing multiplexers through both theoretical analysis and electrical simulations. The proposed 4T(ransitor)1R(RAM) programming structure demonstrates significant improvements in programming current, when compared to most popular 2T1R programming structure. 4T1R-based routingmultiplexer designs are proposed by considering various physical design parasitics, such as intrinsic capacitance of RRAMs and wells doping organization. The proposed 4T1R-based multiplexers outperformbest CMOS implementations significantly in area, delay and power at both nominal and near-Vt regime. From a CAD perspective, we develop a generic FPGA architecture exploration tool, FPGASPICE, modeling a full FPGA fabric with SPICE and Verilog netlists. FPGA-SPICE provides different levels of testbenches and techniques to split large SPICE netlists, in order to obtain better trade-off between simulation time and accuracy. FPGA-SPICE can capture area and power characteristics of SRAM-based and RRAM-based FPGAs more accurately than the currently best analyticalmodels. From an architecture perspective, we propose architecture-level optimizations for RRAMbased FPGAs and quantify their minimumrequirements for RRAM devices. Compared to the best SRAM-based FPGAs, an optimized RRAM-based FPGA architecture brings significant reduction in area, delay and power respectively. In particular, RRAM-based FPGAs operating in the near-Vt regime demonstrate a 5x power improvement without delay overhead as compared to optimized SRAM-based FPGA operating at nominal working voltage

Contribution à la conception d'architecture de calcul auto-adaptative intégrant des nanocomposants neuromorphiques et applications potentielles

Dans cette thèse, nous étudions les applications potentielles des nano-dispositifs mémoires émergents dans les architectures de calcul. Nous montrons que des architectures neuro-inspirées pourraient apporter l'efficacité et l'adaptabilité nécessaires à des applications de traitement et de classification complexes pour la perception visuelle et sonore. Cela, à un cout moindre en termes de consommation énergétique et de surface silicium que les architectures de type Von Neumann, grâce à une utilisation synaptique de ces nano-dispositifs. Ces travaux se focalisent sur les dispositifs dit memristifs , récemment (ré)-introduits avec la découverte du memristor en 2008 et leur utilisation comme synapse dans des réseaux de neurones impulsionnels. Cela concerne la plupart des technologies mémoire émergentes : mémoire à changement de phase Phase-Change Memory (PCM), Conductive-Bridging RAM (CBRAM), mémoire résistive Resistive RAM (RRAM)... Ces dispositifs sont bien adaptés pour l'implémentation d'algorithmes d'apprentissage non supervisés issus des neurosciences, comme Spike-Timing-Dependent Plasticity (STDP), ne nécessitant que peu de circuit de contrôle. L'intégration de dispositifs memristifs dans des matrices, ou crossbar , pourrait en outre permettre d'atteindre l'énorme densité d'intégration nécessaire pour ce type d'implémentation (plusieurs milliers de synapses par neurone), qui reste hors de portée d'une technologie purement en Complementary Metal Oxide Semiconductor (CMOS). C'est l'une des raisons majeures pour lesquelles les réseaux de neurones basés sur la technologie CMOS n'ont pas eu le succès escompté dans les années 1990. A cela s'ajoute la relative complexité et inefficacité de l'algorithme d'apprentissage de rétro-propagation du gradient, et ce malgré tous les aspects prometteurs des architectures neuro-inspirées, tels que l'adaptabilité et la tolérance aux fautes. Dans ces travaux, nous proposons des modèles synaptiques de dispositifs memristifs et des méthodologies de simulation pour des architectures les exploitant. Des architectures neuro-inspirées de nouvelle génération sont introduites et simulées pour le traitement de données naturelles. Celles-ci tirent profit des caractéristiques synaptiques des nano-dispositifs memristifs, combinées avec les dernières avancées dans les neurosciences. Nous proposons enfin des implémentations matérielles adaptées pour plusieurs types de dispositifs. Nous évaluons leur potentiel en termes d'intégration, d'efficacité énergétique et également leur tolérance à la variabilité et aux défauts inhérents à l'échelle nano-métrique de ces dispositifs. Ce dernier point est d'une importance capitale, puisqu'il constitue aujourd'hui encore la principale difficulté pour l'intégration de ces technologies émergentes dans des mémoires numériques.In this thesis, we study the potential applications of emerging memory nano-devices in computing architecture. More precisely, we show that neuro-inspired architectural paradigms could provide the efficiency and adaptability required in some complex image/audio processing and classification applications. This, at a much lower cost in terms of power consumption and silicon area than current Von Neumann-derived architectures, thanks to a synaptic-like usage of these memory nano-devices. This work is focusing on memristive nano-devices, recently (re-)introduced by the discovery of the memristor in 2008 and their use as synapses in spiking neural network. In fact, this includes most of the emerging memory technologies: Phase-Change Memory (PCM), Conductive-Bridging RAM (CBRAM), Resistive RAM (RRAM)... These devices are particularly suitable for the implementation of natural unsupervised learning algorithms like Spike-Timing-Dependent Plasticity (STDP), requiring very little control circuitry.The integration of memristive devices in crossbar array could provide the huge density required by this type of architecture (several thousand synapses per neuron), which is impossible to match with a CMOS-only implementation. This can be seen as one of the main factors that hindered the rise of CMOS-based neural network computing architectures in the nineties, among the relative complexity and inefficiency of the back-propagation learning algorithm, despite all the promising aspects of such neuro-inspired architectures, like adaptability and fault-tolerance. In this work, we propose synaptic models for memristive devices and simulation methodologies for architectural design exploiting them. Novel neuro-inspired architectures are introduced and simulated for natural data processing. They exploit the synaptic characteristics of memristives nano-devices, along with the latest progresses in neurosciences. Finally, we propose hardware implementations for several device types. We assess their scalability and power efficiency potential, and their robustness to variability and faults, which are unavoidable at the nanometric scale of these devices. This last point is of prime importance, as it constitutes today the main difficulty for the integration of these emerging technologies in digital memories.PARIS11-SCD-Bib. électronique (914719901) / SudocSudocFranceF

SPICE level analysis of Single Event Effects in an OxRRAM cell

International audienc