Role of domain walls in the abnormal photovoltaic effect in BiFeO3

Recently, the anomalous photovoltaic (PV) effect in BiFeO3 (BFO) thin films, which resulted in open circuit voltages (V-oc) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, V-oc as high as 50V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO

Strain-gradient mediated local conduction in strained bismuth ferrite films

It has been recently shown that the strain gradient is able to separate the light-excited electron-hole pairs in semiconductors, but how it affects the photoelectric properties of the photo-active materials remains an open question. Here, we demonstrate the critical role of the strain gradient in mediating local photoelectric properties in the strained BiFeO3 thin films by systematically characterizing the local conduction with nanometre lateral resolution in both dark and illuminated conditions. Due to the giant strain gradient manifested at the morphotropic phase boundaries, the associated flexo-photovoltaic effect induces on one side an enhanced photoconduction in the R-phase, and on the other side a negative photoconductivity in the morphotropic [Formula: see text]-phase. This work offers insight and implication of the strain gradient on the electronic properties in both optoelectronic and photovoltaic devices

Photovoltaic effect in multi-domain ferroelectric perovskite oxides

We propose a device model that elucidates the role of domain walls in the photovoltaic effect in multi-domain ferroelectric perovskites. The model accounts for the intricate interplay between ferroelectric polarization, space charges, photo-generation and electronic transport. When applied to bismuth ferrite, results show a significant electric potential step across both 71-degree and 109-degree domain walls, which in turn contributes to the photovoltaic (PV) effect. We also find a strong correlation between polarization and oxygen octahedra tilts, which indicates the nontrivial role of the latter in the PV effect. The domain wall-based PV effect is further shown to be additive in nature, allowing for the possibility of generating above-bandgap voltag

Photoferroelectric oxides

Giant photovoltaic effect due to bulk photovoltaic effect observed in multiferroic BiFeO3 thin films has triggered a renewed interest on photoferroelectric materials for photovoltaic applications. Tremendous advance has been done to improve power conversion efficiency (up to up to 8.1%) in photoferroelectrics via absorption increase using narrow bandgap ferroelectrics. Other strategies, as it is the more efficient use of ferroelectric internal electric field, are ongoing. Moreover, as a by-product, several progress have been also achieved on photostriction that is the photo-induced deformation phenomenon. Here, we review ongoing and promising routes to improve ferroelectrics photoresponse

Substantial bulk photovoltaic effect enhancement via nanolayering.

Spontaneous polarization and inversion symmetry breaking in ferroelectric materials lead to their use as photovoltaic devices. However, further advancement of their applications are hindered by the paucity of ways of reducing bandgaps and enhancing photocurrent. By unravelling the correlation between ferroelectric materials' responses to solar irradiation and their local structure and electric polarization landscapes, here we show from first principles that substantial bulk photovoltaic effect enhancement can be achieved by nanolayering PbTiO3 with nickel ions and oxygen vacancies ((PbNiO2)x(PbTiO3)(1-x)). The enhancement of the total photocurrent for different spacings between the Ni-containing layers can be as high as 43 times due to a smaller bandgap and photocurrent direction alignment for all absorption energies. This is due to the electrostatic effect that arises from nanolayering. This opens up the possibility for control of the bulk photovoltaic effect in ferroelectric materials by nanoscale engineering of their structure and composition

Ferroelectric materials for photovoltaics

En col·laboració amb la Universitat Autònoma de Barcelona (UAB), la Universitat de Barcelona (UB) i l’Institut de Ciències Fotòniques (ICFO)Ferroelectric photovoltaic has been intensively studied during the last years due to possible high efficient charge separation by presence of an internal electric field. Ferroelectric materials show permanent electrical polarization. Ideally, electric contacts would screen the polarization, but if screening is not perfect, it results in the generation of depolarization field. In this report, we study the photoelectric response of LuMnO3 that shows a small bandgap compared to archetypical ferroelectric materials and a sizeable internal polarization. We have studied its photoresponse dependence on polarization state