A Compact CMOS Memristor Emulator Circuit and its Applications

Conceptual memristors have recently gathered wider interest due to their diverse application in non-von Neumann computing, machine learning, neuromorphic computing, and chaotic circuits. We introduce a compact CMOS circuit that emulates idealized memristor characteristics and can bridge the gap between concepts to chip-scale realization by transcending device challenges. The CMOS memristor circuit embodies a two-terminal variable resistor whose resistance is controlled by the voltage applied across its terminals. The memristor 'state' is held in a capacitor that controls the resistor value. This work presents the design and simulation of the memristor emulation circuit, and applies it to a memcomputing application of maze solving using analog parallelism. Furthermore, the memristor emulator circuit can be designed and fabricated using standard commercial CMOS technologies and opens doors to interesting applications in neuromorphic and machine learning circuits.Comment: Submitted to International Symposium of Circuits and Systems (ISCAS) 201

A survey of carbon nanotube interconnects for energy efficient integrated circuits

This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) challenges with current copper interconnects, 2) process & growth of carbon nanotube interconnects compatible with back-end-of-line integration, and 3) modeling and simulation for circuit-level benchmarking and performance prediction. The focus is on the evolution of carbon nanotube interconnects from the process, theoretical modeling, and experimental characterization to on-chip interconnect applications. We provide an overview of the current advancements on carbon nanotube interconnects and also regarding the prospects for designing energy efficient integrated circuits. Each selected category is presented in an accessible manner aiming to serve as a survey and informative cornerstone on carbon nanotube interconnects relevant to students and scientists belonging to a range of fields from physics, processing to circuit design

Cryogenic Memory Technologies

The surging interest in quantum computing, space electronics, and superconducting circuits has led to new developments in cryogenic data storage technology. Quantum computers promise to far extend our processing capabilities and may allow solving currently intractable computational challenges. Even with the advent of the quantum computing era, ultra-fast and energy-efficient classical computing systems are still in high demand. One of the classical platforms that can achieve this dream combination is superconducting single flux quantum (SFQ) electronics. A major roadblock towards implementing scalable quantum computers and practical SFQ circuits is the lack of suitable and compatible cryogenic memory that can operate at 4 Kelvin (or lower) temperature. Cryogenic memory is also critically important in space-based applications. A multitude of device technologies have already been explored to find suitable candidates for cryogenic data storage. Here, we review the existing and emerging variants of cryogenic memory technologies. To ensure an organized discussion, we categorize the family of cryogenic memory platforms into three types: superconducting, non-superconducting, and hybrid. We scrutinize the challenges associated with these technologies and discuss their future prospects.Comment: 21 pages, 6 figures, 1 tabl

A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed-loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135° under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%

Quantum Acoustics with Surface Acoustic Waves

It has recently been demonstrated that surface acoustic waves (SAWs) can interact with superconducting qubits at the quantum level. SAW resonators in the GHz frequency range have also been found to have low loss at temperatures compatible with superconducting quantum circuits. These advances open up new possibilities to use the phonon degree of freedom to carry quantum information. In this paper, we give a description of the basic SAW components needed to develop quantum circuits, where propagating or localized SAW-phonons are used both to study basic physics and to manipulate quantum information. Using phonons instead of photons offers new possibilities which make these quantum acoustic circuits very interesting. We discuss general considerations for SAW experiments at the quantum level and describe experiments both with SAW resonators and with interaction between SAWs and a qubit. We also discuss several potential future developments.Comment: 14 pages, 12 figure

Memristors: a short review on fundamentals, structures, materials and applications

The paper contains a short literature review on the subject of special type of thin film structures with resistive-switching memory effect. In the literature, such structures are commonly labeled as "memristors". The word "memristor" originates from two words: "memory" and "resistor". For the first time, the memristor was theoretically described in 1971 by Leon Chua as the 4th fundamental passive electronics element with a non-linear current-voltage behavior. The reported area of potential usage of memristor is enormous. It is predicted that the memristor could find application, for example in the domain of nonvolatile random access memory, flash memory, neuromorphic systems and so forth. However, in spite of the fact that plenty of papers have been published in the subject literature to date, the memristor still behaves as a "mysterious" electronic element. It seems that, one of the important reasons that such structures are not yet in practical use, is unsufficient knowledge of physical phenomena determining occurrence of the switching effect. The present paper contains a literature review of available descriptions of theoretical basis of the memristor structures, used materials, structure configurations and discussion about future prospects and limitations